DMN13H750S 130V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) ID TA = +25°C 0.75Ω @ VGS = 10V 1.0A 0.85Ω @ VGS = 6.0V 0.9A V(BR)DSS NEW PRODUCT NEW PRODUCT Features and Benefits 130V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 e3 Lead Free Plating (Matte Tin Finish Annealed over Alloy 42 Leadframe) Terminal Connections: See Diagram Weight: 0.009 grams (Approximate) D D G S G S Top View Pin Configuration Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN13H750S-7 DMN13H750S-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 3H7 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: C = 2015) M = Month (ex: 9 = September) 3H7 Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMN13H750S Document number: DS37572 Rev. 4 - 2 Mar 3 2016 D Apr 4 2017 E May 5 Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 2019 G Aug 8 Sep 9 2020 H Oct O 2021 I Nov N Dec D October 2015 © Diodes Incorporated DMN13H750S Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS ID Value 130 ±20 1.0 0.8 ID 1.2 1.0 A Pulsed Drain Current (10μs Pulse, Duty Cycle ≦1%) IDM 3.3 A Maximum Body Diode Continuous Current (Note 6) IS 1.0 A NEW PRODUCT NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Unit V V A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Symbol (Note 5) (Note 6) Steady state t<10s Steady state t<10s (Note 6) Value 0.77 1.26 163 115 99 70 17.3 -55 to +150 PD RJA RJA RJC TJ, TSTG Units W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 130 100 ±100 V nA nA VGS = 0V, ID = 250A VDS = 120V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS (ON) 2.7 0.41 0.43 0.8 4.0 0.75 0.85 1.2 V Static Drain-Source On-Resistance 2.0 VDS = VGS, ID = 250A VGS = 10V, ID = 2.0A VGS = 6.0V, ID = 2.0A VGS = 0V, IS = 1.0A Ciss Coss Crss RG 231 19 11 pF VDS = 25V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz 2.3 5.6 0.8 2.0 2.3 1.7 6.6 1.7 26 21 Qg Qgs Qgd nC VDS = 104V, VGS = 10V, ID = 2.0A ns VDS = 65V, ID = 2.0A, VGS = 10V, RG = 6.0Ω ns nC VR = 100V, IF=1.0A, di/dt=100A/µs Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: VSD tD(ON) tR tD(OFF) tF tRR QRR V Test Condition 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN13H750S Document number: DS37572 Rev. 4 - 2 2 of 6 www.diodes.com October 2015 © Diodes Incorporated DMN13H750S 3 3.0 VGS = 10.0V VDS=5V VGS = 6.0V 2.5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V 2.0 VGS = 4.0V 1.5 1.0 VGS = 3.8V 0.5 2 TA = 125oC 1.5 0.5 TA = -55oC 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.6 0.55 0.5 VGS = 6.0V 0.45 VGS = 10.0V 0.4 0.35 1 2 3 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 5 1 0.9 0.8 0.7 0.6 0.5 ID = 2.0A 0.4 0.3 0 2 3 4 5 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 2.6 1.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic TA = 150oC TA = 25oC VGS = 3.5V 0 TA = 85oC 1 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT NEW PRODUCT 2.5 VGS= 10V TA = 150oC 1 0.8 TA = 125oC 0.6 TA = 85oC 0.4 TA = 25oC 0.2 TA = -55oC 0 0 0.5 1 1.5 2 2.5 3 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMN13H750S Document number: DS37572 Rev. 4 - 2 3 of 6 www.diodes.com 2.4 2.2 2 VGS = 10V, ID=2A 1.8 1.6 VGS = 6V, ID=2A 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 150 Figure 6. On-Resistance Variation with Temperature October 2015 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 3.5 1.1 1 0.9 VGS = 6V, ID=2A 0.8 0.7 0.6 VGS = 10V, ID=2A 0.5 0.4 0.3 0.2 3 ID = 1mA 2.5 1.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 1000 CT, JUNCTION CAPACITANCE (pF) 3 2.5 IS, SOURCE CURRENT (A) ID = 250µA 2 -50 VGS = 0V, TA=150oC f=1MHz Ciss 100 2 VGS = 0V, TA=125oC 1.5 VGS = 0V, TA=25oC 1 VGS = 0V, TA=85oC VGS = 0V, TA=-55oC 0.5 Coss 10 Crss 1 0 0 0.3 0.6 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.2 5 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 10 10 PW =100µs RDS(ON) Limited Limited R DS(ON) PW =1ms 8 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT NEW PRODUCT DMN13H750S 6 VDS=104V, ID=2A 4 1 DC 0.1 0.01 2 0 PW =10s PW =1s PW =100ms TJ (MAX)=150℃ TA=25℃ Single Pulse DUT on 1*MRP board VGS=10V PW =10ms 0.001 0 1 2 3 4 5 Qg, TOTAL GATE CHARGE (nC) Figure 11. Gate Charge DMN13H750S Document number: DS37572 Rev. 4 - 2 6 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 1000 Figure 12. SOA, Safe Operation Area 4 of 6 www.diodes.com October 2015 © Diodes Incorporated DMN13H750S NEW PRODUCT NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.5 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t)=r(t) * RθJA RθJA=160oC/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. All 7° H K1 J K SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm GAUGE PLANE 0.25 a M A L C L1 B D G F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMN13H750S Document number: DS37572 Rev. 4 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com October 2015 © Diodes Incorporated DMN13H750S IMPORTANT NOTICE NEW PRODUCT NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMN13H750S Document number: DS37572 Rev. 4 - 2 6 of 6 www.diodes.com October 2015 © Diodes Incorporated