ON MBRS360P Surface mount schottky power rectifier Datasheet

MBRS360P
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Features
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard−Ring for Stress Protection
These are Pb−Free Devices
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SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES, 60 VOLTS
SMC
CASE 403AC
Mechanical Characteristics
MARKING DIAGRAM
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 217 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
AYWW
B36G
G
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
•
•
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings:
♦ Machine Model, C
♦ Human Body Model, 3B
B36
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBRS360PT3G
Package
Shipping†
SMC
(Pb−Free)
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
August, 2015 − Rev. 0
1
Publication Order Number:
MBRS360P/D
MBRS360P
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
60
V
Average Rectified Forward Current
IF(AV)
3.0 @ TL = 137°C
4.0 @ TL = 127°C
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
Storage Temperature Range
Tstg
− 65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
− 65 to +175
°C
A
125
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
RqJL
11
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
136
°C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
RqJA
71
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 4)
(iF = 3.0 A, TJ = 25°C)
VF
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
iR
V
0.63
mA
0.03
3.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with minimum recommended pad size, PC Board FR4.
3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
10
IF, INSTANTANEOUS FORWARD
CURRENT (A)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
10
TJ = 150°C
TJ = 175°C
1
TJ = 100°C
TJ = 25°C
0.1
0.01
TJ = −40°C
0.0
0.2
0.4
0.6
TJ = 175°C
1
TJ = 150°C
TJ = 25°C
0.01
0.8
TJ = 100°C
0.1
TJ = −40°C
0.0
0.2
0.4
0.6
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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2
MBRS360P
IR, INSTANTANEOUS REVERSE
CURRENT (A)
1.0E+00
1.0E−01
TJ = 175°C
1.0E−02
TJ = 150°C
1.0E−03
TJ = 100°C
1.0E−04
1.0E−05
TJ = 25°C
1.0E−06
1.0E−07
0
10
20
30
40
50
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
60
Figure 3. Typical Reverse Current
IR, INSTANTANEOUS REVERSE
CURRENT (A)
1.0E+00
1.0E−01
TJ = 175°C
TJ = 150°C
1.0E−02
TJ = 100°C
1.0E−03
1.0E−04
TJ = 25°C
1.0E−05
1.0E−06
0
10
20
30
40
50
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
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3
60
5
PFO, AVERAGE POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD CURRENT (A)
MBRS360P
dc
4
SQUARE WAVE
3
2
1
RqJL = 15°C/W
0
0
20
40
60
80
100 120 140
TL, LEAD TEMPERATURE (°C)
160
180
4
TJ = 175°C
3.5
SQUARE
WAVE
3
dc
2.5
2
1.5
1
0.5
0
0
0.5
1.5
1
2.5
2
3
3.5
4
4.5
5
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
1000
C, CAPACITANCE (pF)
TJ = 25°C
100
10
0
10
20
40
30
50
60
70
VR, REVERSE VOLTAGE (V)
r(t), TRANSIENT THERMAL RESPONSE
Figure 7. Typical Capacitance
100
D = 0.5
0.2
10
0.1
P(pk)
0.05
1
0.01
0.1
0.00001
Test Type > min pad 1 oz
RqJC = min pad 1 oz C/W
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.0001
0.001
0.1
0.01
1
10
t, TIME (s)
Figure 8. Thermal Response, Junction−to−Ambient, SMC Package
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4
100
1000
MBRS360P
PACKAGE DIMENSIONS
SMC 2−LEAD
CASE 403AC
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE.
4. DIMENSIONS D AND E1 TO BE DETERMINED AT DATUM H.
5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA DE­
TERMINED BY DIMENSION L.
E
E1
D
A1
DIM
A
A1
b
c
D
E
E1
L
c
DETAIL A
TOP VIEW
DETAIL A
MILLIMETERS
MIN
MAX
1.95
2.65
0.05
0.20
2.90
3.20
0.15
0.41
5.55
6.25
7.75
8.15
6.60
7.15
0.75
1.60
A
b
L
SIDE VIEW
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
8.75
2X
3.79
2X
2.25
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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MBRS360P/D
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