IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM AUGUST 2009 FEATURES HIGH SPEED: (IS61/64WV5128ALL/BLL) • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low stand-by power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV5128ALS/BLS) • High-speed access time: 25, 35 ns • Low Active Power: 35 mW (typical) • Low stand-by power: 0.6 mW (typical) CMOS standby • Single power supply — Vdd 1.65V to 2.2V (IS61WV5128Axx) — Vdd 2.4V to 3.6V (IS61/64WV5128Bxx) • Fully static operation: no clock or refresh required • Three state outputs • Industrial and Automotive temperature support • Lead-free available DESCRIPTION The ISSI IS61WV5128Axx and IS61/64WV5128Bxx are very high-speed, low power, 524,288-word by 8-bit CMOS static RAMs. The IS61WV5128Axx and IS61/64WV5128Bxx are fabricated using ISSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. The IS61WV5128Axx and IS61/64WV5128Bxx operate from a single power supply. The IS61WV5128ALL and IS61/64WV5128BLL are available in 36-pin 400-mil SOJ, 36-pin mini BGA, and 44-pin TSOP (Type II) packages. The IS61WV5128ALS and IS61/64WV5128BLS are available in 32-pinTSOP (Type I), 32-pin sTSOP (Type I), 32-pin SOP and 32-pin TSOP (Type II) packages. FUNCTIONAL BLOCK DIAGRAM A0-A18 DECODER 512K X 8 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O VDD GND I/O0-I/O7 CE OE CONTROL CIRCUIT WE Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 1 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS PIN CONFIGURATION (HIGH SPEED) (61/64WV5128ALL/BLL) 44-Pin TSOP (Type II) 36 mini BGA 1 2 3 4 5 6 A A0 A1 NC A3 A6 A8 B I/O4 A2 WE A4 A7 I/O0 NC A5 C I/O5 D GND VDD E VDD GND F I/O6 G I/O7 H A9 2 I/O2 A18 A17 OE CE A16 A15 I/O3 A10 A11 A12 A13 A14 PIN DESCRIPTIONS A0-A18 CE OE WE I/O0-I/O7 Vdd GND NC I/O1 Address Inputs Chip Enable Input Output Enable Input Write Enable Input Bidirectional Ports Power Ground No Connection NC NC A0 A1 A2 A3 A4 CE I/O0 I/O1 VDD GND I/O2 I/O3 WE A5 A6 A7 A8 A9 NC NC 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 NC NC NC A18 A17 A16 A15 OE I/O7 I/O6 GND VDD I/O5 I/O4 A14 A13 A12 A11 A10 NC NC NC 36-Pin SOJ A0 1 36 NC A1 2 35 A18 A2 3 34 A17 A3 4 33 A16 A4 5 32 A15 CE 6 31 OE I/O0 7 30 I/O7 I/O1 8 29 I/O6 VDD 9 28 GND GND 10 27 VDD I/O2 11 26 I/O5 I/O3 12 25 I/O4 WE 13 24 A14 A5 14 23 A13 A6 15 22 A12 A7 16 21 A11 A8 17 20 A10 A9 18 19 NC Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS PIN CONFIGURATION (LOW POWER) (61/64WV5128ALS/BLS) 32-pin TSOP (TYPE I), (Package Code T) 32-pin sTSOP (TYPE I) (Package Code H) A11 A9 A8 A13 WE A18 A15 VDD A17 A16 A14 A12 A7 A6 A5 A4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 32-pin SOP 32-pin TSOP (TYPE II) (Package Code T2) A17 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VDD A15 A18 WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 PIN DESCRIPTIONS A0-A18 CE OE WE I/O0-I/O7 Vdd GND Address Inputs Chip Enable 1 Input Output Enable Input Write Enable Input Input/Output Power Ground Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 3 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Vdd = 3.3V + 5% Symbol Voh Vol Vih Vil Ili Ilo Parameter Test Conditions Output HIGH Voltage Vdd = Min., Ioh = –4.0 mA Output LOW Voltage Vdd = Min., Iol = 8.0 mA Input HIGH Voltage Input LOW Voltage(1) Input Leakage GND ≤ Vin ≤ Vdd Output Leakage GND ≤ Vout ≤ Vdd, Outputs Disabled Min. 2.4 — 2 –0.3 –1 –1 Max. — 0.4 Vdd + 0.3 0.8 1 1 Unit V V V V µA µA Min. 1.8 — 2.0 –0.3 –1 –1 Max. — 0.4 Vdd + 0.3 0.8 1 1 Unit V V V V µA µA Note: 1. Vil (min.) = –0.3V DC; Vil (min.) = –2.0V AC (pulse width <10 ns). Not 100% tested. Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width <10 ns). Not 100% tested. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Vdd = 2.4V-3.6V Symbol Parameter Test Conditions Voh Output HIGH Voltage Vdd = Min., Ioh = –1.0 mA Vol Output LOW Voltage Vdd = Min., Iol = 1.0 mA Vih Input HIGH Voltage Vil Input LOW Voltage(1) Ili Input Leakage GND ≤ Vin ≤ Vdd Ilo Output Leakage GND ≤ Vout ≤ Vdd, Outputs Disabled Note: 1. Vil (min.) = –0.3V DC; Vil (min.) = –2.0V AC (pulse width <10 ns). Not 100% tested. Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width <10 ns). Not 100% tested. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Vdd = 1.65V-2.2V Symbol Voh Vol Vih Vil(1) Ili Ilo Parameter Test Conditions Output HIGH Voltage Vdd = Min, Ioh = -0.1 mA Output LOW Voltage Vdd = Min, Iol = 0.1 mA Input HIGH Voltage Input LOW Voltage Input Leakage GND ≤ Vin ≤ Vdd Output Leakage GND ≤ Vout ≤ Vdd, Outputs Disabled Min. 1.4 — 1.4 –0.2 –1 –1 Max. — 0.2 Vdd + 0.2 0.4 1 1 Unit V V V V µA µA Note: 1. Vil (min.) = –0.3V DC; Vil (min.) = –2.0V AC (pulse width <10 ns). Not 100% tested. Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width <10 ns). Not 100% tested. 4 Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS TRUTH TABLE Mode WE Not Selected X (Power-down) Output Disabled H Read H Write L CE H OE X L L L H L X I/O Operation Vdd Current High-Z Isb1, Isb2 High-Z Dout Din Icc Icc Icc ABSOLUTE MAXIMUM RATINGS(1) Symbol Vterm Vdd Tstg Pt Parameter Terminal Voltage with Respect to GND Vdd Relates to GND Storage Temperature Power Dissipation Value –0.5 to Vdd + 0.5 –0.3 to 4.0 –65 to +150 1.0 Unit V V °C W Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1,2) Symbol Cin CI/O Parameter Input Capacitance Input/Output Capacitance Conditions Vin = 0V Vout = 0V Max. 6 8 Unit pF pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 3.3V. Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 5 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS HIGH SPEED (IS61WV5128ALL/BLL) OPERATING RANGE (Vdd) (IS61WV5128ALL) Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C Automotive –40°C to +125°C Vdd 1.65V-2.2V 1.65V-2.2V 1.65V-2.2V Speed 20ns 20ns 20ns OPERATING RANGE (Vdd) (IS61WV5128BLL)(1) Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C Vdd (8 ns)1 3.3V + 5% 3.3V + 5% Vdd (10 ns)1 2.4V-3.6V 2.4V-3.6V Note: 1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the range of 3.3V + 5%, the device meets 8ns. OPERATING RANGE (Vdd) (IS64WV5128BLL) Range Automotive Ambient Temperature –40°C to +125°C Vdd (10 ns) 2.4V-3.6V POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -8 Symbol Parameter Test Conditions Min. Max. Icc Vdd Dynamic Operating Vdd = Max., Com. — 50 Supply Current Iout = 0 mA, f = fmax Ind. — 55 Auto. — — typ.(2) Icc1 Operating Vdd = Max., Com. — 35 Supply Current Iout = 0 mA, f = 0 Ind. — 40 Auto. — — Isb1 TTL Standby Current Vdd = Max., Com. — 10 (TTL Inputs) Vin = Vih or Vil Ind. — 15 CE ≥ Vih, f = 0 Auto. — — Isb2 CMOS Standby Vdd = Max., Com. — 7 Current (CMOS Inputs) CE ≥ Vdd – 0.2V, Ind. — 10 Vin ≥ Vdd – 0.2V, or Auto. — — Vin ≤ 0.2V, f = 0 typ.(2) -10 Min. Max. — 40 — 45 — 65 25 — 35 — 40 — 60 — 10 — 15 — 30 — 7 — 10 — 20 2 -20 Min. Max. Unit — 40 mA — 45 — 65 — — — — — — — — — 30 mA 40 60 10 mA 15 30 7 mA 10 20 Note: 1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at Vdd = 3.0V, Ta = 25oC and not 100% tested. 6 Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS LOW POWER (IS61WV5128ALS/BLS) OPERATING RANGE (Vdd) (IS61WV5128ALS) Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C Automotive –40°C to +125°C Vdd 1.65V-2.2V 1.65V-2.2V 1.65V-2.2V Speed 35ns 35ns 35ns OPERATING RANGE (Vdd) (IS61WV5128BLS)(1) Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C Vdd 2.4V-3.6V 2.4V-3.6V Speed 25 ns 25 ns OPERATING RANGE (Vdd) (IS64WV5128BLS) Range Automotive Ambient Temperature –40°C to +125°C Vdd 2.4V-3.6V Speed 35 ns POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -25 Symbol Parameter Test Conditions Min. Max. Icc Vdd Dynamic Operating Vdd = Max., Com. — 20 Supply Current Iout = 0 mA, f = fmax Ind. — 25 Auto. — 50 typ.(2) 11 Icc1 Operating Vdd = Max., Com. — 10 Supply Current Iout = 0 mA, f = 0 Ind. — 12 Auto. — 20 TTL Standby Current Vdd = Max., Com. — 5 Isb1 (TTL Inputs) Vin = Vih or Vil Ind. — 7 CE ≥ Vih, f = 0 Auto. — 10 Isb2 CMOS Standby Vdd = Max., Com. — 1 Current (CMOS Inputs) CE ≥ Vdd – 0.2V, Ind. — 2 Vin ≥ Vdd – 0.2V, or Auto. — 10 Vin ≤ 0.2V, f = 0 typ.(2) 0.2 -35 Min. Max. Unit — 20 mA — 25 — 50 — — — — — — — — — 10 mA 12 20 5 mA 7 10 1 mA 2 10 Note: 1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at Vdd = 3.0V, Ta = 25oC and not 100% tested. Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 7 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level (VRef) Output Load Unit (2.4V-3.6V) 0V to 3V 1V/ ns 1.5V Unit (3.3V + 10%) 0V to 3V 1V/ ns 1.5V Unit (1.65V-2.2V) 0V to 1.8V 1V/ ns 0.9V See Figures 1 and 2 See Figures 1 and 2 See Figures 1 and 2 AC TEST LOADS 319 Ω ZO = 50Ω 1.5V OUTPUT 30 pF Including jig and scope Figure 1. 8 3.3V 50Ω OUTPUT 5 pF Including jig and scope 353 Ω Figure 2. Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter trc Read Cycle Time taa Address Access Time toha Output Hold Time tace CE Access Time tdoe OE Access Time thzoe(2) OE to High-Z Output (2) tlzoe OE to Low-Z Output thzce(2 CE to High-Z Output tlzce(2) CE to Low-Z Output tpu Power Up Time tpd Power Down Time Min. 8 — 2.0 — — — 0 0 3 0 — -8 Max. — 8 — 8 4.5 3 — 3 — — 8 -10 Min. Max. 10 — — 10 2.0 — — 10 — 4.5 — 4 0 — 0 4 3 — 0 — — 10 Unit ns ns ns ns ns ns ns ns ns ns ns Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 9 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol trc taa toha tace tdoe thzoe(2) tlzoe(2) thzce(2 tlzce(2) tpu tpd Parameter Read Cycle Time Address Access Time Output Hold Time CE Access Time OE Access Time OE to High-Z Output OE to Low-Z Output CE to High-Z Output CE to Low-Z Output Power Up Time Power Down Time -20 ns -25 ns Min. Max. Min. Max. 20 — 25 — — 20 — 25 2.5 — 4 — — 20 — 25 — 8 — 12 0 8 0 8 0 — 0 — 0 8 0 8 3 — 10 — 0 — 0 — — 20 — 25 -35 ns Min. Max. 35 — — 35 4 — — 35 — 15 0 10 0 — 0 10 10 — 0 — — 35 Unit ns ns ns ns ns ns ns ns ns ns ns Notes: 1. Test conditions assume signal transition times of 1.5 ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to Vdd-0.3V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. Not 100% tested. 10 Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS AC WAVEFORMS READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = Vil) t RC ADDRESS t AA t OHA DOUT t OHA DATA VALID PREVIOUS DATA VALID READ1.eps READ CYCLE NO. 2(1,3) (CE and OE Controlled) t RC ADDRESS t AA t OHA OE t HZOE t DOE t LZOE CE t LZCE DOUT t ACE HIGH-Z t HZCE DATA VALID CE_RD2.eps Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE = Vil. 3. Address is valid prior to or coincident with CE LOW transitions. Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 11 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range) -8 Symbol twc tsce taw tha tsa tpwe1 tpwe2 tsd thd thzwe(2) tlzwe(2) Parameter Write Cycle Time CE to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time WE Pulse Width (OE = HIGH) WE Pulse Width (OE = LOW) Data Setup to Write End Data Hold from Write End WE LOW to High-Z Output WE HIGH to Low-Z Output Min. 8 6.5 6.5 Max. — — — 0 0 6.5 8.0 5 0 — 2 — — — — — — 3.5 — -10 Min. 10 8 8 0 0 8 10 6 0 — 2 Max. — — — Unit ns ns ns — ns — ns — ns — ns — ns —ns 5 ns — ns Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. Shaded area product in development 12 Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range) Symbol twc tsce taw tha tsa tpwe1 tpwe2 tsd thd thzwe(3) tlzwe(3) -20 ns-25 ns-35 ns Parameter Min. Max. Min. Max. Min. Max. Write Cycle Time 20 — 25 — 35 — CE to Write End 12 — 18 — 25 — Address Setup Time 12 — 15 — 25 — to Write End Address Hold from Write End 0 — 0 — 0 — Address Setup Time 0 — 0 — 0 — WE Pulse Width (OE = HIGH) 12 — 18 — 30 — WE Pulse Width (OE = LOW) 17 — 20 — 30 — Data Setup to Write End 9 — 12 — 15 — Data Hold from Write End 0 — 0 —0 — WE LOW to High-Z Output WE HIGH to Low-Z Output — 9 3 — — 12 5 — — 20 5 — Unit ns ns ns ns ns ns ns ns ns ns ns Notes: 1. Test conditions for IS61WV6416LL assume signal transition times of 1.5ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to Vdd-0.3V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 13 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS AC WAVEFORMS WRITE CYCLE NO. 1(1,2) (CE Controlled, OE = HIGH or LOW) t WC VALID ADDRESS ADDRESS t SA t SCE t HA CE t AW t PWE1 t PWE2 WE t HZWE DOUT DATA UNDEFINED t LZWE HIGH-Z t SD DIN t HD DATAIN VALID CE_WR1.eps 14 Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS WRITE CYCLE NO. 2(1,2) (WE Controlled: OE is HIGH During Write Cycle) t WC ADDRESS VALID ADDRESS t HA OE CE LOW t AW t PWE1 WE t SA DOUT t HZWE t LZWE HIGH-Z DATA UNDEFINED t SD t HD DATAIN VALID DIN CE_WR2.eps Notes: 1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE > Vih. WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle) t WC ADDRESS VALID ADDRESS OE LOW CE LOW t HA t AW t PWE2 WE t SA DOUT t HZWE DATA UNDEFINED t LZWE HIGH-Z t SD DIN t HD DATAIN VALID CE_WR3.eps Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 15 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS HIGH SPEED (IS61WV5128ALL/BLL) DATA RETENTION SWITCHING CHARACTERISTICS (2.4V-3.6V) Symbol Parameter Test Condition Options Min. Typ.(1) Vdr Vdd for Data Retention See Data Retention Waveform 2.0 — Idr Data Retention Current Vdd = 2.0V, CE ≥ Vdd – 0.2V Com. — 2 Ind. — — Auto. tsdr Data Retention Setup Time See Data Retention Waveform 0 — trdr Recovery Time See Data Retention Waveform trc — Note 1: Typical values are measured at Vdd = 3.0V, Ta = 25 C and not 100% tested. Max. Unit 3.6 V 6 mA 8 15 — ns — ns o DATA RETENTION SWITCHING CHARACTERISTICS (1.65V-2.2V) Symbol Parameter Test Condition Options Vdr Vdd for Data Retention See Data Retention Waveform Idr Data Retention Current Vdd = 1.2V, CE ≥ Vdd – 0.2V Com. Ind. tsdr Data Retention Setup Time See Data Retention Waveform trdr Recovery Time See Data Retention Waveform Note 1: Typical values are measured at Vdd = 1.8V, Ta = 25 C and not 100% tested. Min. 1.2 — — 0 trc Typ.(1) — 2 — — — Max. 3.6 6 8 — — Unit V mA ns ns o DATA RETENTION WAVEFORM (CE Controlled) tSDR Data Retention Mode tRDR VDD VDR CE GND 16 CE ≥ VDD - 0.2V Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS LOW POWER (IS61WV5128ALS/BLS) DATA RETENTION SWITCHING CHARACTERISTICS (2.4V-3.6V) Symbol Parameter Test Condition Options Min. Typ.(1) Vdr Vdd for Data Retention See Data Retention Waveform 2.0 — Idr Data Retention Current Vdd = 2.0V, CE ≥ Vdd – 0.2V Com. — 0.2 Ind. — — Auto. tsdr Data Retention Setup Time See Data Retention Waveform 0 — trdr Recovery Time See Data Retention Waveform trc — Note 1: Typical values are measured at Vdd = 3.0V, Ta = 25 C and not 100% tested. Max. Unit 3.6 V 1 mA 2 10 — ns — ns o DATA RETENTION SWITCHING CHARACTERISTICS (1.65V-2.2V) Symbol Parameter Test Condition Options Vdr Vdd for Data Retention See Data Retention Waveform Idr Data Retention Current Vdd = 1.2V, CE ≥ Vdd – 0.2V Com. Ind. tsdr Data Retention Setup Time See Data Retention Waveform trdr Recovery Time See Data Retention Waveform Note 1: Typical values are measured at Vdd = 1.8V, Ta = 25 C and not 100% tested. Min. 1.2 — — 0 trc Typ.(1) — 0.2 — — — Max. 3.6 1 2 — — Unit V mA ns ns o DATA RETENTION WAVEFORM (CE Controlled) tSDR Data Retention Mode tRDR VDD VDR CE GND Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 CE ≥ VDD - 0.2V 17 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS ORDERING INFORMATION (HIGH SPEED) Commercial Range: 0°C to +70°C Voltage Range: 2.4V to 3.6V Speed (ns) 10 (81) Order Part No. IS61WV5128BLL-10TL Package TSOP (Type II), Lead-free Note: 1. Speed = 8ns for Vdd = 3.3V + 5%. Speed = 10ns for Vdd = 2.4V to 3.6V. Industrial Range: -40°C to +85°C Voltage Range: 2.4V to 3.6V Speed (ns) 10 (81) Order Part No. IS61WV5128BLL-10BI IS61WV5128BLL-10BLI IS61WV5128BLL-10TI IS61WV5128BLL-10TLI IS61WV5128BLL-10KLI Package 36-ball mini BGA (6mm x 8mm) 36-ball mini BGA (6mm x 8mm), Lead-free TSOP (Type II) TSOP (Type II), Lead-free 400-mil Plastic SOJ, Lead-free Note: 1. Speed = 8ns for Vdd = 3.3V + 5%. Speed = 10ns for Vdd = 2.4V to 3.6V. Industrial Range: -40°C to +85°C Voltage Range: 1.65V to 2.2V Speed (ns) 20 Order Part No. IS61WV5128ALL-20BI IS61WV5128ALL-20TI Package 36-ball mini BGA (6mm x 8mm) TSOP (Type II) Automotive Range: -40°C to +125°C Voltage Range: 2.4V to 3.6V Speed (ns) Order Part No. 10 IS64WV5128BLL-10BA3 IS64WV5128BLL-10BLA3 IS64WV5128BLL-10CTA3 IS64WV5128BLL-10CTLA3 18 Package 36-ball mini BGA (6mm x 8mm) 36-ball mini BGA (6mm x 8mm), Lead-free TSOP (Type II), Copper Leadframe TSOP (Type II), Copper Leadframe Lead-free Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS ORDERING INFORMATION (LOW POWER) Industrial Range: -40°C to +85°C Voltage Range: 2.4V to 3.6V Speed (ns) 25 Order Part No. IS61WV5128BLS-25TLI Package TSOP (Type II), Lead-free Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 19 20 4. Formed leads shall be planar with respect to one another within 0.1mm at the seating plane after final test. 5. Reference document : JEDEC SPEC MS-027. 3. Dimension b2 does not include dambar protrusion/intrusion. 2. Dimension D and E1 do not include mold protrusion . 1. Controlling dimension : mm NOTE : 12/20/2007 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 08/12/2008 Package Outline 1. CONTROLLING DIMENSION : MM . 2. Reference document : JEDEC MO-207 NOTE : IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS 21 22 Θ Package Outline 06/04/2008 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION/INTRUSION. 2. DIMENSION D AND E1 DO NOT INCLUDE MOLD PROTRUSION. 1. CONTROLLING DIMENSION : MM NOTE : Θ IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 23 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS 24 Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS Integrated Silicon Solution, Inc. — www.issi.com Rev. I 08/10/09 25