CYSTEKEC MTDN138ZS6R N-channel mosfet (dual transistors) Datasheet

CYStech Electronics Corp.
Spec. No. : C320S6R
Issued Date : 2012.08.17
Revised Date : 2013.12.19
Page No. : 1/ 7
N-Channel MOSFET (dual transistors)
MTDN138ZS6R
Features
• Low on-resistance
• High ESD capability
• High speed switching
• Low-voltage drive
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTDN138ZS6R
SOT-363
Tr1
Tr2
Ordering Information
Device
MTDN138ZS6R-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTDN138ZS6R
CYStek Product Specification
Spec. No. : C320S6R
Issued Date : 2012.08.17
Revised Date : 2013.12.19
Page No. : 2/ 7
CYStech Electronics Corp.
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Reverse Current
Symbol
Limits
VDSS
60
±20
200
800
200
800
VGSS
ID
IDP
IDR
IDRP
Pd
Continuous
Pulsed
Continuous
Pulsed
Power Dissipation
ESD susceptibility
V
(Note 1)
Tj ; Tstg
mA
(Note 1)
300(total) (Note 2)
1550
Operating Junction and Storage Temperature Range
Unit
(Note 3)
-55~+150
mW
V
°C
Note : 1. Pulse test, pulse width≤300μs, duty≤2%
2. 200mW per element must not be exceeded.
3. Human body model, 1.5kΩ in series with 100pF
Electrical Characteristics (Ta=25°C)
Symbol
BVDSS*
VGS(th)
IGSS
IDSS
RDS(ON)*
GFS
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Min.
60
1
100
-
Typ.
1.2
3.2
3.2
2
2
1.5
240
30.6
5.5
4
3
5
14
9
1.1
0.1
0.23
Max.
2
±10
1
5
5
4
4
3
-
Unit
mS
Test Conditions
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=60V, VGS=0
ID=1mA, VGS=2.5V
ID=10mA, VGS=2.5V
ID=10mA, VGS=4V
ID=200mA, VGS=4V
ID=200mA, VGS=10V
VDS=10V, ID=100mA
pF
VDS=10V, VGS=0, f=1MHz
ns
VDS=30V, ID=200mA, VGS=10V,
RG=6Ω
nC
VDS=30V, ID=200mA, VGS=10V
V
μA
Ω
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTDN138ZS6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S6R
Issued Date : 2012.08.17
Revised Date : 2013.12.19
Page No. : 3/ 7
Characteristic Curves
Typical Output Characteristics
1.4
Typical Transfer Characteristics
1.2
6V
4.5V
1.0
4V
0.8
3.5V
0.6
0.4
3V
0.2
2.5V
VGS=2V
2
4
6
8
Drain-Source Voltage -VDS(V)
10
1
0.8
0.6
0.4
0.2
0
0.0
0
VDS=10V
1.2
Drain Current -ID(A)
Drain Current - ID(A)
1.4
10V
0
12
2
Static Drain-Source On-State resistance vs Drain Current
4
6
8
10
Gate-Source Voltage-VGS(V)
12
Reverse Drain Current vs Source-Drain Voltage
10
Source-Drain Voltage-VSD(V)
Static Drain-Source On-State
Resistance-RDS(on)(Ω)
1.2
VGS=2.5V
VGS=4.5V
1
Tj=25°C
0.8
Tj=125°C
0.6
0.4
VGS=10V
0.2
1
0.001
0.01
0.1
Drain Current-ID(A)
0
1
7
6
6
Static Drain-Source On-State
Resistance-RDS(ON)(Ω)
Static Drain-Source On-State
Resistance-RDS(ON)(Ω)
7
5
4
3
ID=100mA
4
3
2
1
0
0
MTDN138ZS6R
2
4
6
8
Gate-Source Voltage-VGS(V)
10
VGS=10V, ID=100mA
5
1
0
1
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
0.2
0.4
0.6
0.8
Reverse Drain Current -IDR(A)
-60
-20
20
60
100
140
Junction Temperature-Tj(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S6R
Issued Date : 2012.08.17
Revised Date : 2013.12.19
Page No. : 4/ 7
Characteristic Curves (Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
Threshold Voltage-VGS(th)(V)
100
Capacitance---(pF)
Ciss
10
C oss
Crss
ID=250uA
1.4
1.2
1
0.8
1
0.1
1
10
Drain-Source Voltage -VDS(V)
100
-60
-20
20
60
100
140
Junction Temperature-Tj(°C)
Power Derating Curve
Power Dissipation---PD(mW)
350
300
Dual
250
200
Single
150
100
50
0
0
50
100
150
Ambient Temperature---TA(℃)
200
Recommended Soldering Footprint
MTDN138ZS6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S6R
Issued Date : 2012.08.17
Revised Date : 2013.12.19
Page No. : 5/ 7
Reel Dimension
Carrier Tape Dimension
MTDN138ZS6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S6R
Issued Date : 2012.08.17
Revised Date : 2013.12.19
Page No. : 6/ 7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTDN138ZS6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S6R
Issued Date : 2012.08.17
Revised Date : 2013.12.19
Page No. : 7/ 7
SOT-363 Dimension
Marking:
72
Device
Code
6-Lead SOT-363 Plastic
Surface Mounted Package
CYStek Package Code: S6R
Style:
Pin 1. Source1 (S1)
Pin 2. Gate1 (G1)
Pin 3. Drain2 (D2)
Pin 4. Source2 (S2)
Pin 5. Gate2 (G2)
Pin 6. Drain1 (D1)
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTDN138ZS6R
CYStek Product Specification
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