Foshan BRF4N60 N-channel mosfet in a to-220f plastic package Datasheet

BRF4N60
Rev.E Dec.-2015
描述
/
DATA SHEET
Descriptions
TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package.
特征
/ Features
低栅电荷,低反馈电容,开关速度快。
Low gate charge, low crss, fast switching.
用途
/
Applications
用于高功率 DC/DC 转换和功率开关。
These devices are well suited for high efficiency switching DC/DC converters and switch mode power
supplies.
内部等效电路
引脚排列
12
/ Equivalent Circuit
/ Pinning
3
PIN1:G
放大及印章代码
PIN 2:D
PIN 3:S
/ hFE Classifications & Marking
见印章说明。See Marking Instructions.
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BRF4N60
Rev.E Dec.-2015
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Drain-Source Voltage
符号
Symbol
VDSS
数值
Rating
600
单位
Unit
V
Drain Current
ID(Tc=25℃)
4.0
A
Drain Current
ID(Tc=100℃)
2.5
A
IDM
16
A
Gate-Source Voltage
VGSS
±30
V
Single Pulsed Avalanche Energy
EAS
240
mJ
Repetitive Avalanche Energy
EAR
10
mJ
Avalanche Current
IAR
4.0
A
Power Dissipation
PD(Tc=25℃)
33
W
TJ,TSTG
-55 to 150
℃
Thermal Resistance, Junction-to-Case
RθJC
3.6
℃/W
Thermal Resistance, Junction-to-Ambient
RθJA
65
℃/W
Drain Current - Pulsed
Operating and Storage Temperature Range
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
coefficient
符号
Symbol
BVDSS
△BVDSS
/△TJ
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Drain-Source Diode Forward
Voltage
Input Capacitance
ID=250μA
0.6
V/℃
VGS=0V
10
μA
VDS=480V
TC=125℃
100
μA
VGS=±30V
VDS=0V
±0.1
μA
VGS(th)
VDS=VGS
ID=250μA
4.0
V
RDS(on)
VGS=10V
ID=2.0A
2.0
2.5
Ω
gFS
VDS=40V
ID=2.0A
4.7
VSD
VGS=0V
IS=4.0A
VDS=25V
f=1.0MHz
VGS=0V
IGSS
Ciss
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
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最小值 典型值 最大值 单位
Min
Typ
Max
Unit
600
V
VDS=600V
Output Capacitance
Turn-Off Fall Time
测试条件
Test Conditions
VGS=0V
ID=250μA
tf
VDD=300V
VGS=10V
ID=4.0A
2.0
S
1.4
545
710
60
80
8
11
10
30
35
80
45
100
40
90
V
pF
ns
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BRF4N60
Rev.E Dec.-2015
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
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BRF4N60
Rev.E Dec.-2015
外形尺寸图
DATA SHEET
/ Package Dimensions
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BRF4N60
Rev.E Dec.-2015
印章说明
/
DATA SHEET
Marking Instructions
BR
4N60
****

说明:
为公司代码
BR:
4N60:

为型号代码
****:

为生产批号代码,随生产批号变化。

Company Code
Note:
BR:  
4N60:
****:
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Product Type.

Lot No. Code, code change with Lot No.
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BRF4N60
Rev.E Dec.-2015
DATA SHEET
波峰焊温度曲线图(无铅)
/
Temperature Profile for Dip Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 255±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:255±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:270±5℃
包装规格
Package Type
封装形式
TO-220/F
套管包装
Package Type
封装形式
使用说明
Temp.:270±5℃
Time:10±1 sec
/ Packaging SPEC.
散件包装
TO-220/F
时间:10±1 sec.
/ BULK
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Units/Bag
只/袋
Bags/Inner Box
袋/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Bag 袋
Inner Box 盒
Outer Box 箱
200
10
2,000
5
10,000
135×190
237×172×102
560×245×195
Units/Tube
只/套管
Tubes/Inner Box
套管/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Tube 套管
Inner Box 盒
Outer Box 箱
50
20
1,000
5
5,000
532×31.4×5.5
555×164×50
575×290×180
/ TUBE
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
/ Notices
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