AIGW50N65H5 Highspeedswitchingseriesfifthgeneration HighspeedfastIGBTinTRENCHSTOPTM5technology FeaturesandBenefits: C HighspeedH5technologyoffering: •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •Dynamicallystresstested •QualifiedaccordingtoAEC-Q101 •Greenpackage(RoHScompliant) •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •Off-boardcharger •On-boardcharger •DC/DCconverter •Power-Factorcorrection 1 Packagepindefinition: 2 3 •Pin1-gate •Pin2&backside-collector •Pin3-emitter KeyPerformanceandPackageParameters Type AIGW50N65H5 Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 50A 1.66V 175°C AG50EH5 PG-TO247-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1 2017-06-30 AIGW50N65H5 Highspeedswitchingseriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Datasheet 2 V2.1 2017-06-30 AIGW50N65H5 Highspeedswitchingseriesfifthgeneration MaximumRatings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IC 80.0 53.5 A Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 150.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs1) - 150.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 270.0 136.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C 2) Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-C) - - 0.55 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=50.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.66 1.91 2.04 2.10 - Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 V Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - 500 40 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 1) 2) V V Defined by design. Not subject to production test. Package not recommended for surface mount applications Datasheet 3 V2.1 2017-06-30 AIGW50N65H5 Highspeedswitchingseriesfifthgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 2800 - - 54 - - 11 - - 116.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=50.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 21 - ns - 12 - ns - 173 - ns - 11 - ns - 0.45 - mJ - 0.16 - mJ - 0.61 - mJ - 20 - ns - 4 - ns - 187 - ns - 24 - ns - 0.10 - mJ - 0.04 - mJ - 0.14 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=25°C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=25°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 4 V2.1 2017-06-30 AIGW50N65H5 Highspeedswitchingseriesfifthgeneration SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 20 - ns - 13 - ns - 200 - ns - 13 - ns - 0.61 - mJ - 0.24 - mJ - 0.85 - mJ - 18 - ns - 4 - ns - 225 - ns - 31 - ns - 0.16 - mJ - 0.07 - mJ - 0.23 - mJ IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=150°C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=150°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 5 V2.1 2017-06-30 AIGW50N65H5 270 90 240 80 210 70 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] Highspeedswitchingseriesfifthgeneration 180 150 120 90 60 50 40 30 60 20 30 10 0 25 50 75 100 125 150 0 175 25 TC,CASETEMPERATURE[°C] 150 135 135 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 120 VGE = 20V 18V 15V 90 12V 75 10V 8V 60 7V 45 6V 150 175 18V 15V 90 12V 75 10V 8V 60 7V 45 6V 5V 30 15 0 125 VGE = 20V 105 5V 30 100 Figure 2. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 150 105 75 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 120 50 15 0 1 2 3 4 0 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tvj=25°C) Datasheet 0 1 2 3 4 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tvj=150°C) 6 V2.1 2017-06-30 AIGW50N65H5 Highspeedswitchingseriesfifthgeneration 150 2.50 Tvj=25°C Tvj=150°C VCEsat,COLLECTOR-EMITTERSATURATION[V] 135 IC,COLLECTORCURRENT[A] 120 105 90 75 60 45 30 15 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 8.5 IC=6.25A IC=12.5A IC=25A IC=50A 25 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaltransfercharacteristic (VCE=20V) 100 125 150 175 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 75 Figure 6. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1000 100 10 1 50 Tvj,JUNCTIONTEMPERATURE[°C] 0 30 60 90 120 100 10 1 150 IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω,dynamic test circuit in Figure E) Datasheet 5 15 25 35 45 55 65 RG,GATERESISTANCE[Ω] Figure 8. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=25A,dynamictestcircuitin Figure E) 7 V2.1 2017-06-30 AIGW50N65H5 Highspeedswitchingseriesfifthgeneration 1000 5.5 100 10 1 25 50 75 100 125 150 typ. min. max. 5.0 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 175 25 Tvj,JUNCTIONTEMPERATURE[°C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamictest circuit in Figure E) 100 125 150 2.4 Eoff Eon Ets 9 Eoff Eon Ets 2.1 8 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 75 Figure 10. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.5mA) 10 7 6 5 4 3 2 1.8 1.5 1.2 0.9 0.6 0.3 1 0 50 Tvj,JUNCTIONTEMPERATURE[°C] 0 30 60 90 120 0.0 150 IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω, dynamic test circuit in Figure E) Datasheet 5 15 25 35 45 55 65 75 85 RG,GATERESISTANCE[Ω] Figure 12. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=25A,dynamictestcircuitin Figure E) 8 V2.1 2017-06-30 AIGW50N65H5 Highspeedswitchingseriesfifthgeneration 1.0 1.1 Eoff Eon Ets 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Eoff Eon Ets 1.0 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 0.9 0.1 25 50 75 100 125 150 0.0 200 175 Tvj,JUNCTIONTEMPERATURE[°C] 250 300 350 400 450 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamic test circuit in Figure E) Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=0/15V, IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamic test circuit in Figure E) 16 VCC=130V VCC=520V Cies Coes Cres 1E+4 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 1000 100 4 10 2 0 0 20 40 60 80 100 1 120 QG,GATECHARGE[nC] Figure 15. Typicalgatecharge (IC=50A) Datasheet 0 5 10 15 20 25 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 9 V2.1 2017-06-30 AIGW50N65H5 Highspeedswitchingseriesfifthgeneration Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 0.115657 0.129838 0.156524 0.147981 τi[s]: 1.8E-4 1.7E-3 0.0144 0.127484 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 17. IGBTtransientthermalimpedance (D=tp/T) Datasheet 10 V2.1 2017-06-30 AIGW50N65H5 Highspeedswitchingseriesfifthgeneration Package Drawing PG-TO247-3 Datasheet 11 V2.1 2017-06-30 AIGW50N65H5 Highspeedswitchingseriesfifthgeneration Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 12 V2.1 2017-06-30 AIGW50N65H5 Highspeedswitchingseriesfifthgeneration RevisionHistory AIGW50N65H5 Revision:2017-06-30,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-06-30 Data sheet created Datasheet 13 V2.1 2017-06-30 TrademarksofInfineonTechnologiesAG µHVIC™,µIPM™,µPFC™,AU-ConvertIR™,AURIX™,C166™,CanPAK™,CIPOS™,CIPURSE™,CoolDP™, CoolGaN™,COOLiR™,CoolMOS™,CoolSET™,CoolSiC™,DAVE™,DI-POL™,DirectFET™,DrBlade™,EasyPIM™, EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,GaNpowIR™, HEXFET™,HITFET™,HybridPACK™,iMOTION™,IRAM™,ISOFACE™,IsoPACK™,LEDrivIR™,LITIX™,MIPAQ™, ModSTACK™,my-d™,NovalithIC™,OPTIGA™,OptiMOS™,ORIGA™,PowIRaudio™,PowIRStage™,PrimePACK™, PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,SmartLEWIS™,SOLIDFLASH™,SPOC™, StrongIRFET™,SupIRBuck™,TEMPFET™,TRENCHSTOP™,TriCore™,UHVIC™,XHP™,XMC™ TrademarksupdatedNovember2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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