NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • • • • High Performance DC-DC Converters System Voltage Rails Netcom, Telecom Servers & Point of Load www.onsemi.com VGS MAX RDS(on) TYP QGTOT 4.5 V 2.3 mW 17.4 nC 10 V 1.4 mW 39.3 nC PIN CONNECTIONS MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) SO8−FL (5 x 6 mm) Symbol Value Units Drain-to-Source Voltage VDSS 25 V Gate-to-Source Voltage VGS ±20 V Continuous Drain Current RqJA (TA = 25°C, Note 1) ID 37 A Power Dissipation RqJA (TA = 25°C, Note 1) PD 3.13 W Continuous Drain Current RqJC (TC = 25°C, Note 1) ID 193 A Power Dissipation RqJC (TC = 25°C, Note 1) PD 83 W Pulsed Drain Current (tp = 10 ms) IDM 449 A Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 38 Apk, L = 0.3 mH) EAS 223 mJ Parameter Drain to Source dV/dt Maximum Junction Temperature Storage Temperature Range Lead Temperature Soldering Reflow (SMD Styles Only), Pb-Free Versions (Note 2) (Top View) N−CHANNEL MOSFET D (5, 6) S (1, 2, 3) G (4) dV/dt 7 V/ns TJ(max) 150 °C TSTG −55 to 150 °C TSLD (Bottom View) °C 260 ORDERING INFORMATION See detailed ordering, marking and shipping information on page 6 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness and FR4 PCB substrate. 2. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C, VGS = 10 V, IL = 26 A, EAS = 101 mJ. THERMALCHARACTERISTICS Parameter Thermal Resistance, Junction-to-Ambient (Note 1 and 4) Junction-to-Case (Note 1 and 4) Symbol Max RqJA RqJC 40.0 1.5 Units °C/W 4. Thermal Resistance RqJA and RqJC as defined in JESD51−3. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 3 1 Publication Order Number: NTMFS4H02NF/D NTMFS4H02NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 25 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS V 18.6 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 20 V TJ = 25°C Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = +20 V VGS(TH) VGS = VDS, ID = 250 mA mV/°C 500 mA +100 nA 2.1 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 3.3 mV/°C VGS = 10 V ID = 30 A 1.1 1.4 VGS = 4.5 V ID = 30 A 1.6 2.3 gFS VDS = 12 V, ID = 15 A 84 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 94 Total Gate Charge QG(TOT) 18.7 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge Total Gate Charge Gate Resistance 2652 VGS = 0 V, f = 1 MHz, VDS = 12 V pF 1644 2.8 VGS = 4.5 V, VDS = 12 V; ID = 30 A QGD nC 7.5 4.3 QG(TOT) VGS = 10 V, VDS = 12 V; ID = 30 A 40.9 RG TA = 25°C 1.0 nC 2 W SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 13.5 VGS = 4.5 V, VDD = 12 V, ID = 15 A, RG = 3.0 W tf 46.7 ns 24.8 7.72 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 10 VGS = 10 V, VDD = 12 V, ID = 15 A, RG = 3.0 W tf 35.7 ns 32.3 4.93 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 2.0 A TJ = 25°C 0.38 TJ = 125°C 0.29 tRR ta tb 0.6 V 41 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 20.2 ns 20.8 30 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS4H02NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit PACKAGE PARASITIC VALUES Source Inductance LS Drain Inductance LD Gate Inductance LG TA = 25°C 0.57 nH 0.13 nH 1.37 nH Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 NTMFS4H02NF TYPICAL CHARACTERISTICS VGS = 10 V to 3.7 V 140 VGS = 3.5 V TJ = 25°C 120 VGS = 3.3 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 140 100 VGS = 3.1 V 80 VGS = 2.9 V 60 40 VGS = 2.7 V 20 100 80 TJ = 125°C 60 40 TJ = 25°C 20 VGS = 2.5 V TJ = −55°C 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 0.0030 4.0 0.0020 0.0019 VGS = 30 V T = 25°C 0.0018 0.0025 0.0017 VGS = 4.5 V 0.0016 0.0020 0.0015 0.0014 0.0013 0.0015 0.0012 VGS = 10 V 0.0011 0.0010 3 4 5 6 7 8 9 0.0010 10 1.5 40 50 60 70 80 90 100 110 120 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1E−01 ID = 30 A VGS = 10 V VGS = 0 V TJ = 150°C 1E−02 1.4 TJ = 125°C 1E−03 1.3 1.2 TJ = 85°C 1E−04 1.1 1E−05 1.0 0.9 0.8 0.7 −50 30 IDSS, LEAKAGE (A) 1.6 20 VGS (V) 1.7 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VDS = 5 V 120 TJ = 25°C 1E−06 1E−07 −25 0 25 50 75 100 125 150 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 25 NTMFS4H02NF 4800 4400 4000 3600 VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) TYPICAL CHARACTERISTICS TJ = 25°C VGS = 0 V 3200 2800 Ciss 2400 2000 1600 Coss 1200 800 400 0 Crss 0 5 10 15 20 6 Qgs 4 Qgd TJ = 25°C VGS = 10 V VDD = 12.0 V ID = 30 A 2 0 0 4 8 12 16 20 24 28 32 36 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 40 25 VDD = 12 V ID = 15 A VGS = 10 V VGS = 0 V td(off) IS, SOURCE CURRENT (A) t, TIME (ns) QT 8 25 1000 tf 100 tr td(on) 10 20 TJ = 125°C TJ = 25°C 15 10 5 0 1 1 10 0.40 0.45 100 0.50 0.55 0.60 0.65 0.70 0.75 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ms 100 100 ms 10 1 ms 0 V < VGS < 10 V 1 10 ms dc RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 0.01 0.1 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) RG, GATE RESISTANCE (W) 1000 ID, DRAIN CURRENT (A) 10 100 110 100 ID = 26 A 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 5 150 NTMFS4H02NF TYPICAL CHARACTERISTICS 100 50% Duty Cycle 10 R(t) (°C/W) 20% 10% 1 5% 2% 1% 0.1 PCB Cu Area 650 mm2 PCB Cu thk 1 oz Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 PULSE TIME (sec) Figure 13. Thermal Characteristics 1000 220 200 ID, DRAIN CURRENT (A) 180 160 GFS (S) 140 120 100 80 60 40 100 20 0 10 1 0 20 40 60 80 100 120 140 0.0000001 0.000001 ID (A) PULSE WIDTH (sec) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics ORDERING INFORMATION Package Shipping† NTMFS4H02NFT1G SO8−FL (Pb-Free) 1500 / Tape & Reel NTMFS4H02NFT3G SO8−FL (Pb-Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAM D 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 S S S G D H02NF AYWZZ D D www.onsemi.com 6 A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceability NTMFS4H02NF PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE L 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A 0.10 C RECOMMENDED SOLDERING FOOTPRINT* SIDE VIEW DETAIL A 4.560 2X b 0.10 C A B 0.05 c STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 2X 0.495 8X MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.15 6.30 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ 1.530 e/2 L 1 4 3.200 4.530 K E2 PIN 5 (EXPOSED PAD) L1 M 1.330 2X 0.905 1 0.965 G D2 4X BOTTOM VIEW 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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