CEP80N15/CEB80N15 CEF80N15 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP80N15 150V 19mΩ 76A 10V CEB80N15 150V 19mΩ 76A 10V CEF80N15 150V 19mΩ 76A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 & TO-220F full-pak for through hole. G D G D S G S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter D S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @ TC = 25 C ID @ TC = 100 C Drain Current-Pulsed a IDM e Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range TJ,Tstg TO-220F 150 Units V ±20 V 76 76 55 304 55 304 d d d A A A 300 68 W 2 0.5 W/ C C -55 to 175 Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case RθJC 0.5 2.2 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.Mar. http://www.cetsemi.com CEP80N15/CEB80N15 CEF80N15 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 150 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 150V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA 4 V 19 mΩ Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 35A Dynamic Characteristics c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 800KHz 2 14 8540 pF 455 pF 365 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 76V, ID = 38A, VGS = 10V, RGEN = 5Ω 45 90 ns 24 48 ns ns 193 386 Turn-Off Fall Time tf 33 66 ns Total Gate Charge Qg 262 340 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 76V, ID = 38A, VGS = 10V 53 nC 83 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS f b VSD VGS = 0V, IS = 76A g Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e .Pulse width limited by safe operating area . f .Full package IS(max) = 37A . g.Full package VSD test condition IS = 37A . 2 76 A 1.2 V CEP80N15/CEB80N15 CEF80N15 100 40 VGS=5V 30 20 10 0 0 1 2 3 4 20 0 2 4 6 8 10 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 4500 3000 1500 Coss Crss 0 5 10 15 20 25 3.0 2.5 ID=35A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 25 C VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 40 0 6000 1.2 60 VDS, Drain-to-Source Voltage (V) 7500 1.3 80 5 9000 0 -55 C TJ=125 C VGS=10,9,8,6V 50 ID, Drain Current (A) ID, Drain Current (A) 60 -25 0 25 50 75 100 125 150 VGS=0V 10 2 10 1 10 0 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 V =75V DS ID=38A 8 -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEP80N15/CEB80N15 CEF80N15 6 4 2 0 0 66 132 198 10 3 10 2 100ms 1ms 10ms 10 10 264 RDS(ON)Limit DC 1 TC=25 C TJ=175 C Single Pulse 0 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 0.02 0.01 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -2 10 -2 t2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 3 10 4 3