Schottky Barrier Rectifier DST5860S-A, TO-277B, Single DST860S, 8A, 8A, 60V,60V, TO-277B, Single DST860S-A RoHS Pb e3 Description Littelfuse DST series Ultra Low VF Schottky Barrier Rectifier is designed to meet the general requirements of automotive applications by providing high temperature, low leakage and lower VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity protection diodes. Features • H i reliability application and automotive grade AEC-Q101 qualified Pin out K Cathode Anode • T rench MOS Schottky technology • S ingle die in TO-277B Package • U ltra low forward voltage drop 1 • P b-free E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin(Sn) (IPC/ JEDEC J-STD609A.01) • H igh frequency operation Anode • M SL: Level 1 - unlimited 2 • H igh junction temperature capability Applications • S witching mode power supply • Free-Wheeling diodes • Polarity Protection Diodes • DC/DC converters Maximum Ratings Parameters Symbol Test Conditions Max Unit Peak Inverse Voltage VRWM - 60 V Average Forward Current IF(AV) 50% duty cycle @TL = 125 °C rectangular wave form 8 A Peak One Cycle Non-Repetitive Surge Current IFSM 8.3 ms, half Sine pulse 140 A Electrical Characteristics Parameters Symbol VF1 Forward Voltage Drop* VF2 Reverse Current* Junction Capacitance * Pulse Width < 300μs, Duty Cycle <2% Test Conditions Typ Max @4A, Pulse, TJ = 25 °C 0.42 - @8A, Pulse, TJ = 25 °C 0.50 0.61 @4A, Pulse, TJ = 125 °C 0.34 - @8A, Pulse, TJ = 125 °C 0.44 0.55 IR1 @VR = rated VR, TJ = 25 °C 0.02 0.6 IR2 @VR = rated VR, TJ = 125 °C 10 25 CT @VR = 5V, TC = 25 °C, fSIG = 1MHz 502 - Unit V mA pF ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised:03/16/17 Schottky Barrier Rectifier DST5860S-A, TO-277B, Single DST860S, 8A, 8A, 60V,60V, TO-277B, Single Thermal-Mechanical Specifications Parameters Symbol Max Unit Junction Temperature TJ -55 to +150 °C -55 to +150 °C 75 °C/W 4 °C/W 0.08 g Storage Temperature Tstg Maximum Thermal Resistance Junction to Ambient RthJA Maximum Thermal Resistance Junction to Lead RthJL Approximate Weight wt Case Style Test Conditions DC operation TO-277B Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Units mounted on 30mm x 30mm copper pad. Figure 3: Typical Junction Capacitance ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised:03/16/17 Schottky Barrier Rectifier DST5860S-A, TO-277B, Single DST860S, 8A, 8A, 60V,60V, TO-277B, Single Dimensions-TO-277B D C A E M L K J D A E H G B I F Millimeters Symbol Min Typ Max A 6.30 6.50 6.70 B 3.88 3.98 4.08 C 0.95 1.10 1.25 D 0.20 0.25 0.30 E 5.28 5.38 5.48 F 3.40 3.55 3.70 G 2.90 3.05 3.20 H 1.74 1.84 1.94 I 1.10 1.25 1.40 J - 0.85 - K 1.70 1.80 1.90 L 0.85 0.90 0.95 M - 0.56 - Part Numbering and Marking System M Mounting Pad Layout L H G B F I 4.90[0.193] MAX 1.00[0.039] MAX 3.20[0.126] MAX 0.95[0.037] MAX 1.94[0.076] MAX DST860 DST10100 S-A S-A 6 LF YYWWL DST 8 10 100 60 S A LF YY WW L = Device Type = Forward Current (8A) (10A) = Reverse Voltage (60V) (100V) = Package Type = AEC-Q101 qualified device = Littelfuse = Year = Week = Lot Number 1.40[0.055] MAX Packing Options Part Number Marking Packing Mode M.O.Q DST860S-A DST860S-A 5000pcs / Reel 5000 Carrier Tape & Reel Specification Symbol Millimeters Min Max A 4.28 4.48 B 6.80 7.00 d 1.40 1.60 d1 - 1.50 E 1.65 1.85 F 5.40 5.60 8.10 P 7.90 P0 3.90 4.10 W 11.70 12.30 ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised:03/16/17