MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RIMM Module Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002) * Add 800-40 and 1066-32 binning * Modify ∆TPD Value of AC electrical specifications * Modify the Values of AC electrical specifications for RIMM Module Version 1.4 (July 2002) * Add 1066-32 512MB (16d RIMM Module) etc. Page 0 Version 1.4 July 2002 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) (16Mx16)*2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V (16Mx18)*2(4/8/16)pcs RIMM Module based on 288Mb A-die, 32s banks,16K/32ms Ref, 2.5V Overview Key Timing Parameters/Part Numbers The RIMM module is a general purpose high- performance memory module suitable for use in a broad range of applications including computer memory, personal computers, workstations and other applications where high bandwidth and low latency are required. The following table lists the frequency and latency bins available for RIMM modules. RDRAM The RIMM module consists of 256/288Mb devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers at 0.94 ns per two bytes (7.5ns per 16 bytes). The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM device's 32-bank architecture supports up to four simultaneous transactions per device. Table 1: Part Number by Freq. & Latency Speed Organization Bin 32M x 16/18 64M x 16/18 128M x 16/18 Features 256M x 16/18 tRAC I/O (Row Freq. Access (MHz) Time) ns Part Number -CM8 800 40 MR16/18R1622AF0-CM8 -CK8 800 45 MR16/18R1622AF0-CK8 -CT9 1066 32P MR18R1624AF1-CT9 -CN9 1066 32 MR18R1624AF1-CN9 -CM8 800 40 MR16/18R1624AF0-CM8 MR16/18R1624AF0-CK8 -CK8 800 45 -CT9 1066 32P MR18R1628AF1-CT9 -CN9 1066 32 MR18R1628AF1-CN9 -CM8 800 40 MR16/18R1628AF0-CM8 MR16/18R1628AF0-CK8 -CK8 800 45 -CT9 1066 32P MR18R162GAF0-CT9 -CN9 1066 32 MR18R162GAF0-CN9 ♦ High speed up to 1066 MHz RDRAM storage ♦ 184 edge connector pads with 1mm pad spacing ♦ Module PCB size : 133.35mm x 31.75mm x 1.27mm -CM8 800 40 MR16/18R162GAF0-CM8 -CK8 800 45 MR16/18R162GAF0-CK8 (5.25” x 1.25” x 0.05”) - 256Mb base RIMM Module Form Factor ♦ Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25” x 1.375” x 0.05”) - 288Mb base RIMM Module ♦ Each RDRAM device has 32 banks, for a total of 512, 256, 128, 64 banks on each 512/576MB, 256/288MB, 128/144MB, 64/72MB module respectively ♦ Gold plated edge connector pad contacts ♦ Serial Presence Detect(SPD) support ♦ Operates from a 2.5 volt supply (±5%) ♦ Powerdown self refresh modes ♦ Separate Row and Column buses for higher efficiency ♦ WBGA package (92 balls) The RIMM modules are offered in 184-pad 1mm edge connector pad pitch suitable for 184 contact RIMM connectors. Figure 1 below, shows a sixteen device RIMM module. Note: On double sided modules, RDRAM devices are also installed on bottom side of PCB. Figure 1: RIMM Module shown with heat spreader removed Page 1 Version 1.4 July 2002 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Table 2: Module Pad Numbers and Signal Names Pin A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 A32 A33 A34 A35 A36 A37 A38 A39 A40 A41 A42 A43 A44 A45 A46 Pin Name Gnd LDQA8 Gnd LDQA6 Gnd LDQA4 Gnd LDQA2 Gnd LDQA0 Gnd LCTMN Gnd LCTM Gnd NC Gnd LROW1 Gnd LCOL4 Gnd LCOL2 Gnd LCOL0 Gnd LDQB1 Gnd LDQB3 Gnd LDQB5 Gnd LDQB7 Gnd LSCK Vcmos SOUT Vcmos NC Gnd NC Vdd Vdd NC NC NC NC Pin B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 B12 B13 B14 B15 B16 B17 B18 B19 B20 B21 B22 B23 B24 B25 B26 B27 B28 B29 B30 B31 B32 B33 B34 B35 B36 B37 B38 B39 B40 B41 B42 B43 B44 B45 B46 Pin Name Pin Gnd LDQA7 Gnd LDQA5 Gnd LDQA3 Gnd LDQA1 Gnd LCFM Gnd LCFMN Gnd NC Gnd LROW2 Gnd LROW0 Gnd LCOL3 Gnd LCOL1 Gnd LDQB0 Gnd LDQB2 Gnd LDQB4 Gnd LDQB6 Gnd LDQB8 Gnd LCMD Vcmos SIN Vcmos NC Gnd NC Vdd Vdd NC NC NC NC A47 A48 A49 A50 A51 A52 A53 A54 A55 A56 A57 A58 A59 A60 A61 A62 A63 A64 A65 A66 A67 A68 A69 A70 A71 A72 A73 A74 A75 A76 A77 A78 A79 A80 A81 A82 A83 A84 A85 A86 A87 A88 A89 A90 A91 A92 Page 2 Pin Name NC NC NC NC Vref Gnd SCL Vdd SDA SVdd SWP Vdd RSCK Gnd RDQB7 Gnd RDQB5 Gnd RDQB3 Gnd RDQB1 Gnd RCOL0 Gnd RCOL2 Gnd RCOL4 Gnd RROW1 Gnd NC Gnd RCTM Gnd RCTMN Gnd RDQA0 Gnd RDQA2 Gnd RDQA4 Gnd RDQA6 Gnd RDQA8 Gnd Pin B47 B48 B49 B50 B51 B52 B53 B54 B55 B56 B57 B58 B59 B60 B61 B62 B63 B64 B65 B66 B67 B68 B69 B70 B71 B72 B73 B74 B75 B76 B77 B78 B79 B80 B81 B82 B83 B84 B85 B86 B87 B88 B89 B90 B91 B92 Pin Name NC NC NC NC Vref Gnd SA0 Vdd SA1 SVdd SA2 Vdd RCMD Gnd RDQB8 Gnd RDQB6 Gnd RDQB4 Gnd RDQB2 Gnd RDQB0 Gnd RCOL1 Gnd RCOL3 Gnd RROW0 Gnd RROW2 Gnd NC Gnd RCFMN Gnd RCFM Gnd RDQA1 Gnd RDQA3 Gnd RDQA5 Gnd RDQA7 Gnd Version 1.4 July 2002 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Table 3: Module Connector Pad Description Signal Pins I/O Type Description Gnd A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, B39, B52, B60, B62, B64, B66, B68, B70, B72, B74, B76, B78, B80, B82, B84, B86, B88, B90, B92 LCFM B10 I RSL Clock from master. Interface clock used for receiving RSL signals from the Channel. Positive polarity. LCFMN B12 I RSL Clock from master. Interface clock used for receiving RSL signals from the Channel. Negative polarity. LCMD B34 I VCMOS Serial Command used to read from and write to the control registers. Also used for power management. LCOL4.. LCOL0 A20, B20, A22, B22, A24 I RSL Column bus. 5-bit bus containing control and address information for column accesses. LCTM A14 I RSL Clock to master. Interface clock used for transmitting RSL signals to the Channel. Positive polarity. LCTMN A12 I RSL Clock to master. Interface clock used for transmitting RSL signals to the Channel. Negative polarity. LDQA8.. LDQA0 A2, B2, A4, B4, A6, B6, A8, B8, A10 I/O RSL Data bus A. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM device. LDQA8 is non-functional on modules with x16 RDRAM devices LDQB8.. LDQB0 B32, A32, B30, A30, B28, A28, B26, A26, B24 I/O RSL Data bus B. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM device. LDQB8 is nonfunctional on modules with x16 RDRAM devices. LROW2.. LROW0 B16, A18, B18 I RSL Row bus. 3-bit bus containing control and address information for row accesses. LSCK A34 I VCMOS Serial Clock input. Clock source used to read from and write to the RDRAM control registers. NC A16, B14, A38, B38, A40, B40, A43, B43, A44, B44, A45, B45, A46, B46, A47, B47, A48, B48, A49, B49, A50, B50, A77, B79 RCFM B83 I RSL Clock from master. Interface clock used for receiving RSL signals from the Channel. Positive polarity. RCFMN B81 I RSL Clock from master. Interface clock used for receiving RSL signals from the Channel. Negative polarity. RCMD B59 I VCMOS Ground reference for RDRAM core and interface. 72 PCB connector pads. These pads are not connected. These 24 connector pads are reserved for future use. Page 3 Serial Command Input. Pin used to read from and write to the control registers. Also used for power management. Version 1.4 July 2002 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Signal Pins I/O Type Description RCOL4.. RCOL0 A73, B73, A71, B71, A69 I RSL Column bus. 5-bit bus containing control and address information for column accesses. RCTM A79 I RSL Clock to master. Interface clock used for transmitting RSL signals to the Channel. Positive polarity. RCTMN A81 I RSL Clock to master. Interface clock used for transmitting RSL signals to the Channel. Negative polarity. RDQA8.. RDQA0 A91, B91, A89, B89, A87, B87, A85, B85, A83 I/O RSL Data bus A. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM device. RDQA8 is non-functional on modules x16 RDRAM devices. RDQB8.. RDQB0 B61, A61, B63, A63, B65, A65, B67, A67, B69 I/O RSL Data bus B. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM device. RDQB8 is non-functional on modules x16 RDRAM devices. RROW2.. RROW0 B77, A75, B75 I RSL Row bus. 3-bit bus containing control and address information for row accesses. RSCK A59 I VCMOS Serial Clock input. Clock source used to read from and write to the RDRAM control registers. SA0 B53 I SVDD Serial Presence Detect Address 0. SA1 B55 I SVDD Serial Presence Detect Address 1. SA2 B57 I SVDD Serial Presence Detect Address 2. SCL A53 I SVDD Serial Presence Detect Clock. SDA A55 I/O SVDD Serial Presence Detect Data (Open Collector I/O). SIN B36 I/O VCMOS Serial I/O for reading from and writing to the control registers. Attaches to SIO0 of the first RDRAM device on the module. SOUT A36 I/O VCMOS Serial I/O for reading from and writing to the control registers. Attaches to SIO1 of the last RDRAM device on the module. SVDD A56, B56 SWP A57 VCMOS A35, B35, A37, B37 CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT. Vdd A41, A42, A54, A58, B41, B42, B54, B58 Supply voltage for the RDRAM core and interface logic. Vref A51, B51 Logic threshold reference voltage for RSL signals. SPD Voltage. Used for signals SCL, SDA, SWE, SA0, SA1 and SA2. I SVDD Page 4 Serial Presence Detect Write Protect (active high). When low, the SPD can be written as well as read. Version 1.4 July 2002 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) LDQA8 LDQA7 LDQA6 LDQA5 LDQA4 LDQA3 LDQA2 LDQA1 LDQA0 LCFM LCFMN LCTM LCTMN LROW2 LROW1 LROW0 LCOL4 LCOL3 LCOL2 LCOL1 LCOL0 LDQB0 LDQB1 LDQB2 LDQB3 LDQB4 LDQB5 LDQB6 LDQB7 LDQB8 SIN LSCK LCMD VREF Vdd DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 SIO0 SIO1 SCK CMD Vref 2 per RDRAM device 0.22/0.1µFa U1 Direct RDRAM (256/288Mb) Gnd VREF DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 SIO0 SIO1 SCK CMD Vref 1 per 2 RDRAM devices Plus one Near Connector 0.22/0.1µFa U2 RDRAM Device(256/288Mb) Gnd VCMOS DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 • SIO0 SIO1 SCK CMD Vref 1 per 2 RDRAM devices 0.22/0.1µFa U3 RDRAM Device(256/288Mb) Gnd • • • • • a. ∗ 0.1 µF : 800MHz products for 64/72MB, 128/144MB and 256/288MB ∗ 0.22 µF : the other products DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 SIO0 SIO1 SCK CMD Vref UN RDRAM Device(256/288Mb) RDQA8 RDQA7 RDQA6 RDQA5 RDQA4 RDQA3 RDQA2 RDQA1 RDQA0 RCFM RCFMN RCTM RCTMN RROW2 RROW1 RROW0 RCOL4 RCOL3 RCOL2 RCOL1 RCOL0 RDQB0 RDQB1 RDQB2 RDQB3 RDQB4 RDQB5 RDQB6 RDQB7 RDQB8 SOUT RSCK RCMD Note 1. Rambus Channel signals form a loop through the RIMM module, with the exception of the SIO chain. Note 2. See Serial Presence Detection Specification for information on the SPD device and its contents. SVDD SCL SWP 47KΩ SA0 SA1 SA2 Module Capacity N 512/576MB 16 256/288MB 8 128/144MB 4 64/72MB 2 Serial Presence Detect Vcc SCL SDA WP A0 A1 A2 SVDD SDA U0 0.22/0.1µFa Gnd Figure 2: RIMM Module Functional Diagram Page 5 Version 1.4 July 2002 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Absolute Maximum Ratings Table 4: Absolute Maximum Ratings Symbol Parameter Min Max Unit VI,ABS Voltage applied to any RSL or CMOS signal pad with respect to Gnd - 0.3 VDD + 0.3 V VDD,ABS Voltage on VDD with respect to Gnd - 0.5 VDD + 1.0 V TSTORE Storage temperature - 50 100 °C TPLATE Plate temperature - 92 °C DC Recommended Electrical Conditions Table 5: DC Recommended Electrical Conditions Symbol Parameter and Conditions Min Max Unit 2.50 - 0.13 2.50 + 0.13 V VDD Supply voltage VCMOS CMOS I/O power supply at pad for 2.5V controllers: CMOS I/O power supply at pad for 1.8V controllers: VDD 1.8 - 0.1 VDD 1.8 + 0.2 V V VREF Reference voltage 1.4 - 0.2 1.4 + 0.2 V VSPD Serial Presence Detector- Positive power supply 2.2 3.6 V Table 6: RIMM Module Capacity and Number of RDRAM device RIMM Module Capacity: Number of 256/288Mb RDRAM devices 512/576MB 256/288MB 128/144MB 64/72MB 16 8 4 2 Page 6 Version 1.4 July 2002 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) RIMM Module Current Profile Table 7: RIMM Module Current Profile IDD RIMM Module Capacity 512/576MB 256/288MB 128/144MB 64/72MB Number of 256/288Mb RDRAM devices 16 8 4 2 Freq Max Max Max Max One RDRAM device in Readb, balance in NAP mode -1066 - /853c - /821 - /805 - /797 -800 620/670 588/638 572/622 564/614 One RDRAM device in Readb, balance in Standby mode -1066 - /2818 - /1738 - /1198 - /928 -800 1760/1810 1120/1170 800/850 640/690 One RDRAM device in Readb, balance in Active mode -1066 - /4018 - /2298 - /1438 - /1008 -800 2360/2410 1400/1450 920/970 680/730 One RDRAM device in Write, balance in NAP mode -1066 - /944 - /912 - /896 - /888 -800 680/740 648/708 632/692 624/684 One RDRAM device in Write, balance in Standby mode -1066 - /2909 - /1829 - /1289 - /1019 -800 1820/1880 1180/1240 860/920 700/760 One RDRAM device in Write, balance in Active mode -1066 - /4109 - /2389 - /1529 - /1099 -800 2420/2480 1460/1520 980/1040 740/800 RIMM Module power conditions a IDD1 IDD2 IDD3 IDD4 IDD5 IDD6 Unit mA mA mA mA mA mA a. Actual power will depend on memory controller and usage patterns. Power does not include Refresh Current. b. I/O current is a function of the % of 1’s, to add I/O power for 50% 1’s for a X16 need to add 257mA or 290mA for X18 ECC module for the following: VDD = 2.5V, VTERM = 1.8V, VREF = 1.4V and VDIL = VREF - 0.5V. c. Current values represent X16(Non-Ecc) / X18(Ecc) Page 7 Version 1.4 July 2002 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) AC Electrical Specifications Table 8: AC Electrical Specifications Symbol Parameter and Conditions Min Typ Max Unit ZL Module Impedance of RSL Signals 25.2 28 30.8 Ω ZUL-CMOS Module Impedance of SCK and CMOS signals 23.8 28 32.2 Ω TPD Propagation Delay variation of RSL signals. Average clock delay from finger to finger of all RSL clock nets (CTM, CTMN, CFM, and CFMN) See Table10a,b ns ∆TPD - Propagation delay variation of RSL signals with respect to TPD b,c for 2, 4 and 8 device modules -21 21 Propagation delay variation of RSL signals with respect to TPD b,c for 16 device modules -24 24 ∆TPD-CMOS Propagation delay variation of SCK signals with respect to an average clock delay -250 250 ∆TPD-SCK,CMD Propagation delay variation of CMD signals with respect to SCK signal -200 200 Vα/VIN Attenuation Limit See Table10a % VXF/VIN Forward crosstalk coefficient (300ps input rise time @ 20%-80%) See Table10a % VXB/VIN Backward crosstalk coefficient (300ps input rise time @ 20%80%) See Table10a % ps ps ps ps a. Table 10 lists parameters and specifications for different storage capacity RIMM Modules that use 256Mb or 288Mb RDRAM devices. b. TPD or Average clock delay is defined as the delay from finger to finger of RSL signal. c. If the RIMM module meets the following specification, then it is compliant to the specification. If the RIMM module does not meet these specifica tions, then the specification can be adjusted by the “Adjusted ∆TPD Specification“ table 9 below. Adjusted ∆TPD Specification Table 9: Adjusted ∆TPD Specification Symbol ∆TPD a. Where: Parameter and Conditions Adjusted Min/Max Absolute Min / Max Propagation delay variation of RSL signals with respect to TPD for 2, 4 and 8 device modules +/-[20+(18*N*∆Z0)]a -30 30 Propagation delay variation of RSL signals with respect to TPD for 16 device modules +/-[24+(18*N*∆Z0)]a -50 50 Unit ps ps N = Number of RDRAM devices installed on the RIMM module ∆Z0 = delta Z0% = (max Z0 - min Z0)/(min Z0) (max Z0 and min Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers on the modules) Page 8 Version 1.4 July 2002 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) AC Electrical Specifications for RIMM Modules Table 10: AC Electrical Specifications for RIMM Modules Symbol RIMM Module Capacity 512/576MB 256/288MB 128/144MB 64/72MB Number of 256/288Mb RDRAM devices 16 8 4 2 Freq. Max Max Max Max -1066 2.11 1.56 1.56 1.56 -800 2.11 1.56 1.56 1.56 -1066 27.0 17.0 17.0 17.0 -800 25.0 16.0 16.0 16.0 Parameter and Condition for RIMM Modules TPD Propagation Delay, all RSL signals Vα/VIN Attenuation Limit Forward crosstalk coefficient (300ps input rise time @ 20%-80%) -1066 8.0 4.0 4.0 4.0 VXF/VIN -800 8.0 4.0 4.0 4.0 Backward crosstalk coefficient (300ps input rise time @ 20%-80%) -1066 2.5 2.0 2.0 2.0 VXB/VIN -800 2.5 2.0 2.0 2.0 -1066 1.2 0.8 0.6 0.6 RDC DC Resistance Limit -800 1.2 0.8 0.6 0.6 Unit ns % % % Page 9 Ω Version 1.4 July 2002 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Physical Dimensions -1 ( For PCB ) The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate. The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005]. 133.35±0.127[5.250±0.005] 6.35[0.25] 3.00[0.118] 120.65[4.75] 4.00±0.15 [0.157±0.006] DIA 2.44 17.78[0.700] 29.21[1.15] 31.75[1.25] COMPONENT AREA (A SIDE) R 2.00 + + 7.468[0.294] A-1 DETAIL A 1.00[0.039] 45.00[1.772] 5.68[0.2236] A-92 DETAIL B 11.50[0.453] 4.50[0.177] 55.175±0.08[2.172±0.003] 45.00[1.772] R 1.00 78.175[3.078] B-1 8.60[0.339] B-92 COMPONENT AREA (B SIDE) Min.6.35[0.25] Note : The gray area above represents the contact surface of the heat spreader. 0.80±0.10 [0.031±0.004] Heat spreader 3.00±0.10 [0.12±0.004] 1.00[0.039] Min.4.88 [0.192] 0.15±0.10 [0.006±0.004] 2.99±0.05 [0.12±0.002] 2.00±0.10 [0.079±0.004] DETAIL A DETAIL B Figure 3: 256Mb base RIMM Module PCB Physical Dimensions Page 10 Version 1.4 July 2002 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Physical Dimensions -2 ( For PCB ) The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate. The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005]. 133.35±0.127[5.250±0.005] 6.35[0.25] 3.00[0.118] 120.65[4.75] 4.00±0.15 [0.157±0.006] DIA 2.44 17.78[0.700] 29.21[1.15] 34.93[1.375] COMPONENT AREA (A SIDE) R 2.00 + + 7.468[0.294] A-1 DETAIL A 1.00[0.039] 45.00[1.772] 5.68[0.2236] A-92 DETAIL B 11.50[0.453] 4.50[0.177] 55.175±0.08[2.172±0.003] 45.00[1.772] R 1.00 78.175[3.078] B-1 8.60[0.339] B-92 COMPONENT AREA (B SIDE) Min.6.35[0.25] Note : The gray area above represents the contact surface of the heat spreader. 0.80±0.10 [0.031±0.004] Heat spreader 3.00±0.10 [0.12±0.004] 1.00[0.039] Min.4.88 [0.192] 0.15±0.10 [0.006±0.004] 2.99±0.05 [0.12±0.002] 2.00±0.10 [0.079±0.004] DETAIL A DETAIL B Figure 4: 288Mb base RIMM Module PCB Physical Dimensions Page 11 Version 1.4 July 2002 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Physical Dimensions -3 ( For Heat Spreader ) The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate. The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005]. 127±0.25[5.0±0.009] 120.66±0.12[4.748±0.005] 108.81±0.12[4.283±0.005] 2.9 [0.114] Center-Point WARNING ! HOT SURFACE http://www.samsungsemi.com 26.54[1.045] 13.7[0.539] DIA 2.36±0.05[0.09±0.001] 1.00±0.07 [0.04±0.002] 12.7±0.07[0.5±0.002] 12.7±0.07[0.5±0.002] 133.35±0.127[5.250±0.005] 127±0.25[5.0±0.009] A 31.75[1.25] http://www.samsungsemi.com 26.54[1.045] WARNING ! HOT SURFACE A SECTION A-A SECTION A-A Max 7.80 [0.307] Max 4.70 [0.185] Heat Spreader Heat Spreader CSP CSP Thermal Conductive Gap Filling Material Thermal Conductive Gap Filling Material PCB PCB 1.27±0.10 [0.050±0.004] 1.27±0.10 [0.050±0.004] [ Single side module ] [ Double side module ] Figure 5: Heat Spreader Physical Dimensions Page 12 Version 1.4 July 2002 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Physical Dimensions -4 ( For Heat Spreader ) The following defines the RIMM module dimensions. All units are in millimeters with inches in brackets[ ], where appropriate. The dimensions without tolerance specification use the default tolerance of ±0.127[±0.005]. 127±0.25[5.0±0.009] 120.66±0.12[4.748±0.005] 108.81±0.12[4.283±0.005] 2.9 [0.114] Center-Point WARNING ! HOT SURFACE http://www.samsungsemi.com 29.42[1.158] 16.5[0.649] DIA 2.36±0.05[0.09±0.001] 1.00±0.07 [0.04±0.002] 12.7±0.07[0.5±0.002] 12.7±0.07[0.5±0.002] 133.35±0.127[5.250±0.005] 127±0.25[5.0±0.009] A 34.93[1.375] http://www.samsungsemi.com 29.42[1.158] WARNING ! HOT SURFACE A SECTION A-A SECTION A-A Max 7.80 [0.307] Max 4.70 [0.185] Heat Spreader Heat Spreader CSP CSP Thermal Conductive Gap Filling Material Thermal Conductive Gap Filling Material PCB PCB 1.27±0.10 [0.050±0.004] 1.27±0.10 [0.050±0.004] [ Single side module ] [ Double side module ] Figure 6: Heat Spreader Physical Dimensions Page 13 Version 1.4 July 2002 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Standard RIMM Module Marking The RIMM modules available from Samsung are marked like Figure 7 below. This marking also assists users to specify and verify if the correct RIMM modules are installed in their systems. In the diagram, a label is shown attached to A B C E D F the RIMM module’s heat spreader. Information contained on the label is specific to the RIMM module and provides RDRAM device information without requiring removal of the RIMM module’s heat spreader. G KOREA 0230 512MB /16 ECC MR18R162GAF0-CT9 1066-32P 102 L J K Label Field I H Description Marked Text Unit A Vendor Logo RIMM Module Vendor SAMSUNG Logo Area SAMSUNG - B Country Country of origin KOREA - C Year & Week code Manufactured Year & Week code yyww - D Module Memory Capacity Number of 8-bit or 9-bit MBytes of RDRAM storage in RIMM module 64MB, 128MB, 256MB, 512MB - E Number of RDRAM devices Number of RDRAM devices contained in the RIMM module 2/4/8/16 F ECC Support Indicates whether the RIMM module supports 8 (non ECC) or 9 (ECC) bit Bytes blank = 8 bit Bytes ECC = 9 bit Bytes - G Notice! Hot surface caution notice. - - H Caution Logo ISO Standard - - RDRAM devices Gerber : 10 = 1.0 ver. I Gerber & SPD Version PCB Gerber file & SPD code version used on RIMM Module 01 = 0.1 ver. SPD : 1 = 1.1 ver. - 2 = 1.3 ver. J tRAC Row Access Time -32P, -32, -40, -45 K Memory Speed Data transfer speed for RDRAM devices 1066, 800 L Part No. SAMSUNG RIMM Module part No. See Table 1 ns MHz - Figure 7: RIMM Module Marking Example Page 14 Version 1.4 July 2002 MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Table Of Contents Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Key Timing Parameters/Part Numbers . . . . . . . . . . . . . . . . 1 Module Pad Numbers and Signal Names . . . . . . . . . . . . . . 2 Module Connector Pad Description . . . . . . . . . . . . . . . 3 - 4 RIMM Module Functional Diagram . . . . . . . . . . . . . . . . . . 5 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . 6 DC Recommended Electrical Conditions . . . . . . . . . . . . . . 6 RIMM Module Supply Current Profile . . . . . . . . . . . . . . . . 7 AC Electrical Specifications . . . . . . . . . . . . . . . . . . . . . 8 - 9 Physical Dimensions -1, -2 ( For PCB ) . . . . . . . . . . 10 - 11 Physical Dimensions -3, -4 ( For Heat Spreader). . . 12 - 13 Standard RIMM Module Marking. . . . . . . . . . . . . . . . . . . 14 Copyright © July 2002, Samsung Electronics. All rights reserved. Direct Rambus, Direct RDRAM and SO-RIMM are trademarks of Rambus Inc. Rambus, RDRAM, RIMM and the Rambus Logo are registered trademarks of Rambus Inc. This document contains advanced information that is subject to change by Samsung Electronics without notice Document Version 1.4 Samsung Electronics Co. Ltd. San #16 Banwol-ri, Taean-Eup Hwasung-City, Gyeonggi-Do, KOREA Telephone: 82-31-208-6369 Fax: 82-31-208-6799 http://www.intl.samsungsemi.com Page 15 Version 1.4 July 2002