DMP3099L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C Low Gate Threshold Voltage Low Input Capacitance 65mΩ @ VGS = -10V -3.8A Fast Switching Speed 99mΩ @ VGS = -4.5V -3.0A Low Input/Output Leakage Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) V(BR)DSS Halogen and Antimony Free. “Green” Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Mechanical Data ideal for high efficiency power management applications. Case: SOT23 Applications Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Power Management Functions DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) D SOT23 S G Top View Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number DMP3099L-7 DMP3099L-13 Notes: Compliance Standard Standard Case SOT23 SOT23 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information D99 Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 DMP3099L Document number: DS36081 Rev. 3 - 2 Mar 3 YM NEW PRODUCT -30V Features and Benefits D99= Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2010 X Apr 4 2011 Y May 5 Jun 6 1 of 6 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D May 2013 © Diodes Incorporated DMP3099L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) VGS = -10V Steady State Units V V IDM Value -30 ±20 -3.8 -2.9 -11 Symbol PD RθJA TJ, TSTG Value 1.08 115 -55 to +150 Units W °C/W °C TA = +25°C TA = +70°C ID NEW PRODUCT Pulsed Drain Current (Note 6) A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 — — — — — — -800 ±100 V nA nA VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1.0 — V Static Drain-Source On-Resistance RDS(ON) — — |Yfs| VSD — — 3.6 — -2.1 65 99 — -1.26 VDS = VGS, ID = -250µA VGS = -10V, ID = -3.8A VGS = -4.5V, ID = -3.0A VDS = -5V, ID = -2.7A VGS = 0V, IS = -2.7A Ciss Coss Crss RG — — — — 563 48 41 10.3 — — — — — 5.2 — — — — — — — — 11 1.7 1.9 4.8 5.0 31 15 — — — — — — — Forward Transfer Admittance Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: Qg Qgs Qgd td(on) tr td(off) tf mΩ S V pF pF pF Ω Test Condition VDS = -25V, VGS = 0V, f = 1.0MHz VGS = 0V VDS = 0V, f = 1MHz VDS = -15V, VGS = -4.5V, ID = -3.8A nC ns VDS = -15V, VGS = -10V, ID = -3.8A VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω 5. Device mounted on FR-4 PCB on 2 oz., 0.5 in.2 copper pads and t ≤5 sec. 6. Pulse width ≤10µS, Duty Cycle ≤1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP3099L Document number: DS36081 Rev. 3 - 2 2 of 6 www.diodes.com May 2013 © Diodes Incorporated DMP3099L 20.0 VDS = -5.0V VGS = -4.0V VGS = -4.5V -ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16.0 12.0 8.0 VGS = -3.0V VGS = -2.5V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 16 TA = 125°C T A = -55°C 12 8 0.1 VGS = -4.5V VGS = -10V 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE () VGS = -10V ID = -5.3A 1.6 1.4 1.2 VGS = -4.5V ID = -4.2A 1 0.8 0.6 0.4 0.2 0 -50 Document number: DS36081 Rev. 3 - 2 1 2 3 4 5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 6 VGS = -4.5V 0.35 0.3 TA = 150°C 0.25 TA = 125°C 0.2 TA = 85°C 0.15 0.1 TA = 25°C 0.05 0 T A = -55°C 0 4 8 12 16 -ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.16 0.14 0.12 VGS = 4.5V ID = 4.2A 0.1 0.08 0.06 VGS = 10V ID = 5.3A 0.04 0.02 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMP3099L 0 0.4 20 2 1.8 0 5 1 0.01 TA = 150°C TA = 25°C VGS = -2.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 TA = 85°C 4 4.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 20 VGS = -10V 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature May 2013 © Diodes Incorporated DMP3099L 20 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 16 ID = -1mA 1.6 ID = -250µA 0.8 12 0 -50 1000 T A = 25°C 8 4 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) NEW PRODUCT 2.4 Ciss 100 Coss Crss f = 1MHz 10 0 5 10 15 20 25 30 Document number: DS36081 Rev. 3 - 2 VDS = 15V ID = 3.8A 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance DMP3099L 9 4 of 6 www.diodes.com May 2013 © Diodes Incorporated DMP3099L Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. NEW PRODUCT A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° All Dimensions in mm B C H K J M K1 D F L G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMP3099L Document number: DS36081 Rev. 3 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E E 5 of 6 www.diodes.com May 2013 © Diodes Incorporated DMP3099L IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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