IXYS IXYJ30N120C3D1 Advance technical information Datasheet

Advance Technical Information
IXYJ30N120C3D1
1200V XPTTM GenX3TM
IGBT w/ Diode
VCES =
IC110 =
VCE(sat) 
tfi(typ) =
(Electrically Isolated Tab)
High-Speed IGBT
for 20-50 kHz Switching
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
VGES
VGEM
ISO TO-247TM
E153432
Maximum Ratings
1200
1200
V
V
Continuous
Transient
±20
±30
V
V
IC25
IC110
IF110
ICM
TC
TC
TC
TC
32
14
15
128
A
A
A
A
IA
EAS
TC = 25°C
TC = 25°C
20
400
A
mJ
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
ICM = 60
VCE  VCES
A
PC
TC = 25°C
140
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
2500
V~
5
g
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque
VISOL
50/60 Hz, RM, t = 1min
Weight
G


= 250A, VGE = 0V
1200
VGE(th)
IC
= 250A, VCE = VGE
3.0
ICES
VCE = VCES, VGE = 0V






IGES
VCE = 0V, VGE = 20V
VCE(sat)
IC
= 30A, VGE = 15V, Note 1
TJ = 150C
5.0
V
25
350
A
μA
100
nA
3.3
V
V
© 2013 IXYS CORPORATION, All Rights Reserved
3.7
C
= Collector
Optimized for Low Switching Losses
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Anti-Parallel Ultra Fast Diode
Avalanche Rated
Advantages

V
TJ = 125C
Isolated Tab
High Power Density
Low Gate Drive Requirement
Applications
Characteristic Values
Min.
Typ.
Max.
IC
E
Features

BVCES
C
G = Gate
E = Emitter

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
1200V
14A
3.3V
88ns







High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100559(9/13)
IXYJ30N120C3D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
10
IC = 30A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
17
S
1640
140
38
pF
pF
pF
69
9
34
nC
nC
nC
19
40
2.6
130
88
1.1
ns
ns
mJ
ns
ns
mJ
19
52
6.0
156
140
1.6
ns
ns
mJ
ns
ns
mJ
0.21
0.89 °C/W
°C/W
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 0.5 • VCES, RG = 10
Note 2
Inductive load, TJ = 150°C
IC = 30A, VGE = 15V
VCE = 0.5 • VCES, RG = 10
Note 2
RthJC
RthCS
ISO TO-247 (IXYJ) OUTLINE
PINS:
1 = Gate
2 = Drain
3 = Source
4 = Isolated
Reverse Diode (FRED)
(TJ = 25°C, Unless Otherwise Specified)
Symbol
Test Conditions
VF
IF = 30A,VGE = 0V, Note 1
IRM
trr
Characteristic Value
Min. Typ.
Max.
TJ = 150°C
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C
VR = 600V
195
TJ = 100°C
RthJC
Notes:
3.00
V
V
9
A
1.75
ns
1.25 °C/W
1. Pulse test, t  300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYJ30N120C3D1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
160
60
VGE = 15V
13V
12V
11V
10V
50
VGE = 15V
140
14V
120
13V
I C - Amperes
I C - Amperes
40
9V
30
8V
20
100
12V
80
11V
60
10V
9V
40
7V
10
8V
20
7V
6V
6V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
20
25
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.4
2.0
40
9V
30
8V
20
1
2
3
4
5
6
1.6
1.4
I C = 30A
1.2
1.0
I C = 15A
0.6
6V
5V
0
I C = 60A
1.8
0.8
7V
10
0.4
-50
7
-25
0
25
VCE - Volts
50
75
125
150
175
Fig. 6. Input Admittance
80
TJ = 25ºC
70
7
TJ = - 40ºC
25ºC
150ºC
60
I C - Amperes
6
I C = 60A
5
100
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
8
30
VGE = 15V
2.2
VCE(sat) - Normalized
50
VCE - Volts
15
Fig. 3. Output Characteristics @ TJ = 150ºC
VGE = 15V
13V
12V
11V
10V
0
10
VCE - Volts
60
I C - Amperes
5
VCE - Volts
4
50
40
30
30A
3
20
2
10
15A
1
0
7
8
9
10
11
12
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
13
14
15
4
5
6
7
8
VGE - Volts
9
10
11
IXYJ30N120C3D1
Fig. 7. Transconductance
Fig. 8. Gate Charge
25
16
TJ = - 40ºC
VCE = 600V
14
I C = 30A
20
150ºC
VGE - Volts
g f s - Siemens
25ºC
15
I G = 10mA
12
10
10
8
6
4
5
2
0
0
0
10
20
30
40
50
60
70
80
90
100
0
10
20
I C - Amperes
Fig. 9. Capacitance
40
50
60
70
Fig. 10. Reverse-Bias Safe Operating Area
10,000
70
f = 1 MHz
60
50
1,000
C ies
I C - Amperes
Capacitance - PicoFarads
30
QG - NanoCoulombs
C oes
40
30
100
20
TJ = 150ºC
RG = 10Ω
dv / dt < 10V / ns
10
C res
10
0
0
5
10
15
20
25
30
35
40
200
300
400
500
600
700
800
900
1000
1100
1200
1300
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
Z (th)JC - ºC / W
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
10
IXYJ30N120C3D1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
5.0
Eon -
---
TJ = 150ºC , VGE = 15V
4.0
20
Eoff
24
21
VCE = 600V
3.0
15
2.5
12
2.0
9
1.5
6
2.0
1.5
8
TJ = 25ºC
4
3
0.5
0.5
0
10
15
20
25
30
35
40
45
50
0
15
55
25
30
35
45
50
55
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
4.5
Eoff
4.0
RG = 10Ω , VGE = 15V
Eon
550
tfi
200
----
8
1.5
I C = 30A
1.0
t f i - Nanoseconds
2.0
4
0.5
0.0
25
50
75
100
160
400
140
350
I C = 30A
120
300
100
250
80
60
150
40
100
50
15
20
25
30
220
200
tfi
180
RG = 10Ω , VGE = 15V
td(off) - - - -
240
100
140
80
120
40
80
20
60
50
I C - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
55
60
170
VCE = 600V
160
120
150
I C = 30A
100
140
80
130
60
120
I C = 60A
100
TJ = 25ºC
45
t f i - Nanoseconds
160
TJ = 150ºC
td(off) - - - -
40
110
20
25
50
75
100
TJ - Degrees Centigrade
125
100
150
t d(off) - Nanoseconds
180
t d(off) - Nanoseconds
140
40
55
RG = 10Ω , VGE = 15V
140
200
35
tfi
160
VCE = 600V
30
50
180
220
160
25
45
180
260
20
40
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
60
35
RG - Ohms
TJ - Degrees Centigrade
120
200
I C = 60A
20
0
150
125
450
t d(off) - Nanoseconds
2.5
Eon - MilliJoules
12
500
VCE = 600V
3.5
I C = 60A
td(off) - - - -
TJ = 150ºC, VGE = 15V
180
16
3.0
60
220
20
15
40
I C - Amperes
VCE = 600V
E off - MilliJoules
20
RG - Ohms
5.0
t f i - Nanoseconds
12
TJ = 150ºC
1.0
I C = 30A
1.0
16
Eon - MilliJoules
18
----
VCE = 600V
Eon - MilliJoules
I C = 60A
3.5
Eon
RG = 10Ω , VGE = 15V
2.5
Eoff - MilliJoules
Eoff
4.5
Eoff - MilliJoules
3.0
27
IXYJ30N120C3D1
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
320
280
tri
240
VCE = 600V
200
80
td(on) - - - -
40
120
30
I C = 30A
80
20
40
10
0
t r i - Nanoseconds
t r i - Nanoseconds
160
25
30
35
40
45
50
TJ = 25ºC
tri
100
20
80
18
60
16
40
14
20
12
0
10
15
20
25
30
70
26
60
40
45
50
Triangular Wave
55
60
TJ = 150ºC
TC = 75ºC
VCE = 600V
VCE = 600V
24
I C = 60A
120
22
80
20
40
18
I C = 30A
0
75
100
50
I C - Amperes
160
t d(on) - Nanoseconds
t r i - Nanoseconds
35
Fig. 21. Maximum Peak Load Current vs. Frequency
28
td(on) - - - -
50
22
I C - Amperes
RG = 10Ω , VGE = 15V
25
24
TJ = 150ºC
120
55
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
200
26
VCE = 600V
RG - Ohms
240
28
140
0
20
td(on) - - - -
t d(on) - Nanoseconds
I C = 60A
t d(on) - Nanoseconds
50
30
RG = 10Ω , VGE = 15V
160
60
200
15
tri
180
70
TJ = 150ºC, VGE = 15V
10
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
125
16
150
VGE = 15V
RG = 10Ω
D = 0.5
40
30
Square Wave
20
10
0
1
10
TJ - Degrees Centigrade
100
1000
fmax - KiloHertzs
Fig. 22. Maximum Transient Thermal Impedance (Diode)
Z (th)JC - ºC / W
10
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_30N120C3(4N-C91) 9-04-13
IXYJ30N120C3D1
Fig. 23. Forward Current IF vs VF
70
Fig. 24. Reverse Recovery Charge QRM vs. -diF/dt
5
TVJ = 100ºC
60
VR = 600V
4
50
IF = 60A
TVJ = 150ºC
IF
[A]
100ºC
40
3
25ºC
QRM
[µC]
30
30A
2
15A
20
1
10
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
100
1000
500
VF [V]
-diF/dt [A/µs]
Fig. 26. Dynamic Parameters QRM, IRM vs. TVJ
Fig. 25. Peak Reverse Current IRM vs. -diF/dt
60
2
TVJ = 100ºC
I RM & QRM [normalized]
VR = 600V
50
40
IF = 60A, 30A, 15A
I RM
30
[A]
20
1.5
1
IRM
0.5
QRM
10
0
0
0
200
400
600
800
20
1000
40
60
80
Fig. 27. Recovery Time trr vs. -diF/dt
220
100
120
Fig. 28. Peak Forward Voltage VFR, trr vs -diF/dt
120
IF = 30A
100
VR = 600V
1.2
1
trr
80
trr
[ns]
160
TVJ = 100ºC
TVJ = 100ºC
200
140
TVJ [ºC]
-diF/dt [A/µs]
0.8
180
VFR
[V]
IF = 60A
30A
15A
160
140
120
0.6 trr
60
[µs]
VFR
40
0.4
20
0.2
0
0
200
400
600
-diF/dt [A/µs]
© 2013 IXYS CORPORATION, All Rights Reserved
800
1000
0
100
200
300
400
500
600
-diF/dt [A/µs]
700
800
900
0
1000