Renesas H7N0602LD Silicon n channel mos fet high speed power switching Datasheet

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H7N0602LD, H7N0602LS, H7N0602LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1130-0600
Rev.6.00
Oct 16, 2006
Features
• Low on-resistance
RDS (on) = 4.1 mΩ typ.
• 4.5 V gate drive devices
• High Speed Switching
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
4
1. Gate
2. Drain
3. Source
4. Drain
1
1
2
2
3
3
H7N0602LD
H7N0602LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
D
4
G
1
2
3
H7N0602LM
Rev.6.00 Oct 16, 2006 page 1 of 8
S
H7N0602LD, H7N0602LS, H7N0602LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
IAP Note 3
EAR Note 3
Pch Note 2
Tch
Tstg
Value
60
±20
85
340
85
65
362
100
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note:
4. Pulse test
Rev.6.00 Oct 16, 2006 page 2 of 8
Symbol
V (BR) DSS
V (BR) GSS
IDSS
IGSS
VGS (off)
|yfs|
RDS (on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
VDF
trr
Min
60
±20
—
—
1.5
70
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
120
4.1
6.2
9000
1000
470
140
30
30
55
290
140
50
0.95
45
Max
—
—
10
±10
2.5
—
5.2
9.0
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = 60 V, VGS = 0
VGS = ±16 V, VDS = 0
VDS = 10 V, ID = 1 mA Note 4
ID = 45 A, VDS = 10 V Note 4
ID = 45 A, VGS = 10 V Note 4
ID = 45 A, VGS = 4.5 V Note 4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 25 V
VGS = 10 V
ID = 85 A
VGS = 10 V
ID = 45 A
RL = 0.67 Ω
Rg = 4.7 Ω
IF = 85 A, VGS = 0
IF = 85 A, VGS = 0
diF/dt = 100 A/µs
H7N0602LD, H7N0602LS, H7N0602LM
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
1000
ID (A)
300
120
Drain Current
Channel Dissipation
Pch (W)
160
80
40
50
100
150
Case Temperature
Operation in
this area is
1 limited by RDS(on)
3
3
10
80
3.5 V
40
VDS (V)
160
80
40
Tc = 75°C
25°C
–25°C
VGS = 3 V
0
0
2
4
6
Drain to Source Voltage
8
0
10
VDS (V)
Pulse Test
400
300
ID = 50 A
100
20 A
10 A
0
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Rev.6.00 Oct 16, 2006 page 3 of 8
2
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage
VDS(on) (mV)
500
1
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
100
120
4V
0
30
VDS = 10 V
Pulse Test
4.5 V
ID (A)
160
1
200
Pulse Test
6V
0.3
Typical Transfer Characteristics
Drain Current
ID (A)
10 V
120
Drain Current
PW = 10 ms
(1shot)
Drain to Source Voltage
Tc (°C)
Typical Output Characteristics
200
µs
DC Operation
(Tc = 25°C)
10
0.1
0.1
200
µs
30
Ta = 25°C
0
0
s
100
0.3
0
10
10
1m
100
Pulse Test
30
10
VGS = 4.5 V
10 V
3
1
1
3
10
30
100
300
Drain Current ID (A)
1000
H7N0602LD, H7N0602LS, H7N0602LM
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source on State Resistance
RDS(on) (mΩ)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
50 A
12
ID = 10, 20 A
8
VGS = 4.5 V
4
10, 20, 50 A
10 V
0
–50
0
50
100
Case Temperature
150
200
1000
Tc = –25°C
300
100
25°C
30
75°C
10
3
VDS = 10 V
Pulse Test
1
1
3
Tc (°C)
Capacitance C (pF)
Reverse Recovery Time trr (ns)
30
10
3000
1000
Coss
1
0.1
100
10
30
Reverse Drain Current
Ciss
10000
300
3
100
VGS = 0
f = 1 MHz
0
10
12
40
8
20
VDD = 50 V
25 V
10 V
0
0
40
80
120
160
Gate Charge Qg (nc)
Rev.6.00 Oct 16, 2006 page 4 of 8
30
40
50
4
0
200
1000
tf
Switching Time t (ns)
VDD = 50 V
25 V
10 V
60 V
DS
16
VGS (V)
20
ID = 85 A
VGS
20
Switching Characteristics
Gate to Source Voltage
Drain to Source Voltage
VDS (V)
Dynamic Input Characteristics
80
Crss
Drain to Source Voltage VDS (V)
IDR (A)
100
1000
30000
3
1
300
100000
100
0.3
100
Typical Capacitance vs.
Drain to Source Voltage
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
300
30
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
1000
10
tr
300
100
30
td(off)
td(on)
tr
tf
10
3
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty ≤ 1 %
Rg = 4.7 Ω
1
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
H7N0602LD, H7N0602LS, H7N0602LM
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current
IDR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
200
10 V
160
120
80
5V
VGS = 0, –5 V
40
Pulse Test
0
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
500
IAP = 65 A
VDD = 25 V
duty < 0.1 %
Rg ≥ 50 Ω
400
300
200
100
0
25
VSD (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
θch – c (t) = γ s (t) • θch – c
0.1
0.1
θch – c = 1.25°C/W, Tc = 25°C
0.05
PDM
0.02
0.03
D=
1
0.0 pulse
t
ho
1s
0.01
10 µ
PW
T
PW
T
100 µ
1m
10 m
100 m
10
1
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
IAP
D.U.T
VDD
VDS
ID
Vin
15 V
50 Ω
0
Rev.6.00 Oct 16, 2006 page 5 of 8
VDD
H7N0602LD, H7N0602LS, H7N0602LM
Switching Time Test Circuit
Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
Vin
Vout
Vin
10 V
VDS
= 30 V
10%
10%
90%
td(on)
Rev.6.00 Oct 16, 2006 page 6 of 8
10%
RL
tr
90%
td(off)
tf
H7N0602LD, H7N0602LS, H7N0602LM
Package Dimensions
RENESAS Code
PRSS0004AE-A
MASS[Typ.]
1.40g
4.44 ± 0.2
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
2.49 ± 0.2
11.0 ± 0.5
0.2
0.86 +– 0.1
Package Name
LDPAK(S)-(1)
Unit: mm
10.2 ± 0.3
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
Previous Code
LDPAK(L) / LDPAK(L)V
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
0.4 ± 0.1
MASS[Typ.]
1.30g
(1.5)
10.0
Rev.6.00 Oct 16, 2006 page 7 of 8
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
2.54 ± 0.5
0.2
0.86 +– 0.1
7.8
7.0
2.49 ± 0.2
0.2
0.1 +– 0.1
1.37 ± 0.2
1.3 ± 0.2
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
JEITA Package Code

(1.4)
Package Name
LDPAK(L)
2.2
H7N0602LD, H7N0602LS, H7N0602LM
JEITA Package Code

RENESAS Code
PRSS0004AE-C
Previous Code
LDPAK(S)-(2) / LDPAK(S)-(2)V
MASS[Typ.]
1.35g
7.8
6.6
(2.3)
10.0
2.49 ± 0.2
0.2
0.1 +– 0.1
7.8
7.0
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(2)
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
5.0 +– 0.5
1.3 ± 0.2
Ordering Information
Part Name
H7N0602LD-E
H7N0602LSTL-E
H7N0602LMTL-E
Quantity
500 pcs
1000 pcs
1000 pcs
Shipping Container
Box (Conductive Sack)
Taping
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.6.00 Oct 16, 2006 page 8 of 8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
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2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
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have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
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damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
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13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
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