SMC MBR860S Schottky rectifier Datasheet

SANGDEST
MICROELECTRONICS
MBR860S
Technical Data
Data Sheet N0029, Rev. A
Green Products
MBR860S SCHOTTKY RECTIFIER
Applications:
•
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Center tap configuration
Features:
•
•
•
•
•
•
•
Designed as Bypass Diodes for Solar Panels
High Forward Surge Capability
Ultra Low Forward Voltage Drop
Excellent High Temperature Stability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm
TO-277B
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBR860S
Technical Data
Data Sheet N0029, Rev. A
Green Products
Marking Diagram:
Where XXXXX is YYWWL
8
60
S
YY
WW
L
= Forward Current (8A)
= Reverse Voltage (60V)
= Device Type
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
MBR860S
Package
Shipping
TO-277B (Pb-Free)
5000pcs/ reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Symbol
VRWM
Average Forward Current
IF(AV)
Condition
50% duty cycle @TC =80°C,
rectangular wave form
Peak One Cycle NonRepetitive Surge Current
IFSM
8.3 ms, half Sine pulse
Max.
60
Units
V
8
A
150
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBR860S
Technical Data
Data Sheet N0029, Rev. A
Green Products
Electrical Characteristics:
Characteristics
Forward Voltage Drop
Reverse Current
Symbol
VF1
VF2
IR1
IR2
Typical Junction
Capacitance
*
Cj
Condition
@ 8A, Pulse, TJ = 25 °C
@ 8A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125°C
@VR = 5.0 V, Tc=25℃
fSIG = 1MHz
Max.
0.65
0.60
1.0
Units
V
V
mA
20
mA
400
pF
Specification
-55 to +150
-55 to +150
1.5
Units
°C
°C
2.3
°C/W
0.08
g
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal
Resistance Junction to
Soldering Point
Maximum Thermal
Resistance Junction to Case
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJS
RθJC
wt
Condition
DC operation
DC operation
-
°C/W
TO-277B
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
MBR860S
Technical Data
Data Sheet N0029, Rev. A
Green Products
10
TJ=25℃
100
10
0
5
10
15
20
25
30
35
40
Instantaneous Reverse Current-IR(MA)
1000
1
TJ=125℃
0.1
0.01
0.001
TJ=25℃
0.0001
10
20
Reverse Voltage (V)
30
40
50
Percent of Rated Peak Reverse Voltage (%)
Fig.1-Typical Junction Capacitance
Instantaneous Forward Current (A)
Junction Capacitance (PF)
10000
Fig.2-Typical Reverse Characteristics
100
TJ=125℃
10
TJ=25℃
1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Forward Voltage Drop (V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
60
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0029, Rev. A
MBR860S
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
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