MSS30-xxx-x Series
Low Barrier Silicon Schottky Diodes
Rev. V1
Features
VF, RD and CJ Matching Options
Chip, Beam Lead and Packaged Devices
Hi-Rel Screening per MIL-PRF-19500 and MILPRF-38534 Available
Description
The MSS30-xxx-x Series of Schottky diodes are
fabricated on N-Type epitaxial substrates using
proprietary processes that yield the highest FCOs in
the industry. Optimum mixer performance is
obtained with LO power of -3 dBm to +3 dBm per
diode.
Chip
Electrical Specifications: TA = 25°C
Single Junction
VF
Typ.
V
0.29
VBR
Min.
V
2
Single Junction
0.27
2
Model
Configuration
MSS30-046-C15
MSS30-050-C15
Test Conditions
IF = 1 mA
CJ
Typ. / Max.
pF
0.10 / 0.12
0.15 / 0.18
VR = 0 V
IR = 10 µA
F = 1 MHz
RS
Typ.
Ω
10
RD
Max.
Ω
18
FCO
Typ.
GHz
160
6
15
175
Outline
C15
C15
I = 5 mA
Beam Lead
Electrical Specifications: TA = 25°C
Single Junction
VF
Typ.
V
0.29
VBR
Min.
V
2
CJ
Typ. / Max.
pF
0.07 / 0.10
RS
Typ.
Ω
13
RD
Max.
Ω
22
FCO
Typ.
GHz
175
MSS30-148-B10B
Single Junction
0.27
2
0.12 / 0.15
7
15
190
B10B
MSS30-154-B10B
Single Junction
0.25
2
0.22 / 0.25
3
12
240
B10B
MSS30-242-B20
Series Tee
0.29
2
0.07 / 0.10
13
22
175
B20
MSS30-248-B20
Series Tee
0.27
2
0.12 / 0.15
7
15
190
B20
MSS30-254-B20
Series Tee
0.25
2
0.22 / 0.25
3
12
240
B20
MSS30-442-B41
Ring Quad
0.29
2
0.07 / 0.10
13
22
175
B41
MSS30-448-B41
Ring Quad
0.27
2
0.12 / 0.15
7
15
190
B41
MSS30-454-B40
Ring Quad
0.25
2
0.22 / 0.25
VR = 0 V
IR = 10 µA
F = 1 MHz
3
12
240
B40
Model
Configuration
MSS30-142-B10B
Test Conditions
IF = 1 mA
Outline
B10B
I = 5 mA
(Continued next page)
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MSS30-xxx-x Series
Low Barrier Silicon Schottky Diodes
Rev. V1
Packaged
Electrical Specifications: TA = 25°C
Single Junction
VF
Typ.
V
0.29
VBR
Min.
V
2
CJ
Typ. / Max.
pF
0.23 / 0.30
RS
Typ.
Ω
10
RD
Max.
Ω
18
FCO
Typ.
GHz
160
MSS30-046-P86
Single Junction
0.29
2
0.27 / 0.33
10
18
160
P86
MSS30-050-P55
Single Junction
0.27
2
0.28 / 0.35
6
15
175
P55
MSS30-050-P86
Single Junction
0.27
2
0.32 / 0.38
6
15
175
P86
MSS30-142-E25
Single Junction
0.29
2
0.20 / 0.26
13
22
175
E25
MSS30-142-H20
Single Junction
0.29
2
0.25 / 0.31
13
22
175
H20
MSS30-148-E25
Single Junction
0.27
2
0.25 / 0.31
7
15
190
E25
MSS30-148-H20
Single Junction
0.27
2
0.30 / 0.36
7
15
190
H20
MSS30-154-E25
Single Junction
0.25
2
0.35 / 0.41
3
12
240
E25
MSS30-154-H20
Single Junction
0.25
2
0.40 / 0.46
3
12
240
H20
MSS30-242-E35
Series Tee
0.29
2
0.15 / 0.21
13
22
175
E35
MSS30-242-H30
Series Tee
0.29
2
0.25 / 0.31
13
22
175
H30
MSS30-248-E35
Series Tee
0.27
2
0.25 / 0.31
7
15
190
E35
MSS30-248-H30
Series Tee
0.27
2
0.30 / 0.36
7
15
190
H30
MSS30-254-E35
Series Tee
0.25
2
0.35 / 0.41
3
12
240
E35
MSS30-254-H30
Series Tee
0.25
2
0.40 / 0.46
3
12
240
H30
MSS30-442-E45
Ring Quad
0.29
2
0.15 / 0.21
13
22
175
E45
MSS30-448-E45
Ring Quad
0.27
2
0.20 / 0.26
7
15
190
E45
MSS30-454-E45
Ring Quad
0.25
2
0.25 / 0.31
3
12
240
E45
MSS30-454-H40
Ring Quad
0.25
2
0.25 / 0.31
VR = 0 V
IR = 10 µA
F = 1 MHz
3
12
240
H40
Model
Configuration
MSS30-046-P55
Test Conditions
IF = 1 mA
Outline
P55
I = 5 mA
Absolute Maximum Ratings
Parameters
Rating
Reverse Voltage
Rated VBR
Forward Current
50 mA
Power Dissipation
100 mW, per junction @ TA = 25°C,
derate linearly to 0 @ TA = +150°C
Operating Temperature
-65°C to +150°C
Storage Temperature
-65°C to +150°C
Soldering Temperature (packaged)
+230°C for 5 seconds
Beam Lead Pull Strength
4 G minimum
2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MSS30-xxx-x Series
Low Barrier Silicon Schottky Diodes
Rev. V1
Typical Performance Curves: TA = 25°C
3
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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MSS30-xxx-x Series
Low Barrier Silicon Schottky Diodes
Rev. V1
Outline Drawings
4
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MSS30-xxx-x Series
Low Barrier Silicon Schottky Diodes
Rev. V1
MACOM Technology Solutions Inc. All rights reserved.
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5
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support