CS30L120CT Chip Integration Technology Corporation Super Low Barrier High Voltage Power Rectifier Main Product Characteristics ■ Outline I F ( AV ) 2x15A VRRM 120V TO-220AB O TJ 175 C V ( Ty p ) 0.65V 0.420(10.66) 0.386(9.80) ■ Features 0.197(5.0)MAX 0.055(1.40) 0.043(1.10) 0.226(5.75)MIN • Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 0.155(3.94) MAX 0.624(15.87)MAX Marking code 1 2 3 0.115(2.92) 0.081(2.05) 0.054(1.37) MAX 0.038(0.96) 0.020(0.50) ■ Mechanical data • Epoxy : UL94-V0 rated flame retardant. • Case : JEDEC TO-220AB molded plastic body. • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026. • Polarity: As mark ed. • Mounting Position : Any. • Weight : Approximated 2.25 gram . 0.250(6.35) MIN 0.110(2.80) 0.091(2.30) PIN 1 PIN 3 0.500(12.70)MIN 0.028(0.70) 0.011(0.28) PIN 2 Dimensions in inches and (millimeters) ■ Maximum ratings and electrical characteristics Rating at 25 O C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Parameter Conditions Symbol CS30L120CT Marking code Peak repetitive reverse voltage VRRM Working peak reverse voltage V RW M DC blocking voltage VRM Forward surge current (per diode) Peak repetitive reverse surge current (per diode) Thermal resistance(1) (per diode) V IO 30 A IFSM 250 A 2us - 1kHz IRRM 3 A Junction to case RθJC 2 TJ, TSTG -55 ~ +175 Operating and Storage temperature Parameter Conditions Symbol O I F = 15A, T J = 25 C Forward voltage drop (per diode) 120 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Forward rectified current (total device) O VF I F = 15A, T J = 125 C I F = 30A, T J = 25 O C Reverse current (per diode) UNIT CS30L120CT V R = V R R M T J = 25 O C IR V R = V R R M T J = 125 O C MIN. O C/W O TYP. MAX. 780 830 650 680 900 950 0.022 0.1 5 20 C UNIT mV mA Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate. 1 Document ID : DS-11K6K Revised Date : 2015/08/04 Revision : C5 CS30L120CT Chip Integration Technology Corporation Super Low Barrier High Voltage Power Rectifier ■ Rating and characteristic curves Fig. 2 - Instantaneous Forward Characteristics (per diode) 100 15 Instantaneous Forward Current,I F (A) Average Forward Current,I F ( AV ) (A) Fig.1 - Forward Current Derating Curve (per diode) 10 5 single phase half wave 60Hz resistive or inductive load 0 25 50 75 100 125 150 175 Ambient Temperature,T A ( O C) 10 T A =150°C T A =125°C 1 T A =100°C T A =75°C 0.1 T A =25°C 0.01 0 0.2 0.4 0.6 0.8 1.0 Instantaneous Forward Voltage,V F (Volts) Fig. 3 - Reverse Characteristics (per diode) Instantaneous Reverse Current,I R (mA) 100 T A =150 O C 10 O T A =125 C T A =100 O C 1 T A =75 O C 0.1 T A =25 O C 0.0110 20 40 60 80 100 120 Reverse Voltage,V R (V) 2 Document ID : DS-11K6K Revised Date : 2015/08/04 Revision : C5 CS30L120CT Chip Integration Technology Corporation Super Low Barrier High Voltage Power Rectifier ■ CITC reserves the right to make changes to this document and its products and specifications at any time without notice. ■ Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. ■ CITC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does CITC assume any liability for application assistance or customer product design. ■ CITC does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. ■ No license is granted by implication or otherwise under any intellectual property rights of CITC. ■ CITC products are not authorized for use as critical components in life support devices or systems without express written approval of CITC. http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636 Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.) 3 Document ID : DS-11K6K Revised Date : 2015/08/04 Revision : C5