Diodes DMN4031SSD Dual n-channel enhancement mode mosfet Datasheet

DMN4031SSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCE INFORMATION
Product Summary
RDS(ON) max
ID max
TA = +25°C (Note 5)
•
•
Low Input/Output Leakage
31mΩ @ VGS = 10V
7.0A
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
50mΩ @ VGS = 4.5V
5.6A
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
V(BR)DSS
40V
Features and Benefits
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
•
Motor control
•
Backlighting
•
Power Management Functions
•
DC-DC Converters
Case: SO-8
•
ideal for high efficiency power management applications.
•
Low On-Resistance
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections Indicator: See diagram
•
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
•
Weight: 0.072 grams (approximate)
SO-8
D1
S2
D2
G2
D2
S1
D1
G1
D1
Top View
Internal Schematic
Top View
D2
G1
G2
S1
S2
N-channel MOSFET
N-channel MOSFET
Ordering Information (Note 4)
Part Number
DMN4031SSD-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
N4031SD
N4031SD
YY WW
YY WW
1
4
Chengdu A/T Site
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
1
= Manufacturer’s Marking
N4031SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
4
Shanghai A/T Site
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DMN4031SSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
VGS = 10V
Steady
State
Continuous Drain Current (Note 5)
VGS = 4.5V
Steady
State
Continuous Drain Current (Note 6)
VGS = 10V
Steady
State
Continuous Drain Current (Note 6)
VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
ID
Value
40
±20
5.2
4.1
ID
4.3
3.4
A
ID
7.0
5.6
A
A
5.8
4.7
20
ID
Pulsed Drain Current (Note 7)
Units
V
V
IDM
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
1.42
88
2.6
48
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
On-state drain current
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
40
—
—
—
—
—
—
1
±100
V
μA
nA
VGS = 0V, ID = 10mA
VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
ID(ON)
RDS (ON)
3.0
—
31
50
—
1.0
mΩ
|Yfs|
VSD
2.4
—
19
44
11
0.74
V
A
Static Drain-Source On-Resistance
1.6
20
—
—
—
—
VDS = VGS, ID = 250μA
VGS = 10V, VDS = 5A
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
VDS = 5V, ID = 6A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
TD(on)
Tr
TD(off)
Tf
—
—
—
—
—
—
—
—
—
—
—
—
945
69
58
1.45
8.4
18.6
3.3
2.2
6.4
9.7
19.8
3.1
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
S
V
Test Condition
VDS = 20V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 20V,
ID = 12A
VGS = 10V, VDS = 20V,
RL= 1.6Ω, RG= 3Ω
5. Device mounted on FR-4 PCB, with minimum recommended pad layout. The value in any given application depends on user’s specific board design
6. Device mounted on 1” x 1” FR-4PCB with high coverage 1 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. No subject to production testing.
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
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30
25
25
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
30
VGS = 10V
20
15
VGS = 4.5V
10
5
20
15
10
TA = 150°C
TA = 125°C
0
0.5
1.0
1.5
VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
TA = -55°C
0
2.0
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
5
10
15
20
25
ID, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.6
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
T A = 85°C
TA = 25°C
VGS = 4.0V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω)
RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω)
0
VDS = 5.0V
5
VGS = 3.5V
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Normalized)
ADVANCE INFORMATION
DMN4031SSD
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1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
5
0.06
VGS = 4.5V
0.05
0.04
TA = 150°C
TA = 125°C
0.03
TA = 85°C
TA = 25°C
0.02
TA = -55° C
0.01
0
0
5
10
15
20
25
ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
30
0.06
0.05
0.04
0.03
VGS = 10V
ID = 10A
0.02
VGS = 10V
ID = 5 A
0.01
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
February 2014
© Diodes Incorporated
DMN4031SSD
16
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE(V)
20
2.5
2.0
1.5
1.0
0.5
0
-50
12
8
4
0
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
1,000
10,000
IDSS, LEAKAGE CURRENT (µA)
CT, JUNCTION CAPACITANCE (pF)
T A = 150°C
1,000
Ciss
100
Coss
Crss
100
TA = 125°C
10
TA = 85°C
TA = 25°C
f = 1MHz
10
0
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
1
40
10
20
30
VDS, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
0
100
10
RDS(on)
Limited
f = 1MHz
8
10
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
ADVANCE INFORMATION
3.0
6
4
PW = 10s
PW = 1s
0.1
PW = 100ms
PW = 10ms
PW = 1ms
PW = 100µs
PW = 10µs
0.01
2
0
DC
1
0
2
4
6
8 10 12 14 16 18 20
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
0.001
0.1
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1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
February 2014
© Diodes Incorporated
DMN4031SSD
Package Outline Dimensions
0.254
ADVANCE INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1 E
A1
L
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
Gauge Plane
Seating Plane
Detail ‘A’
h
7°~9°
45°
Detail ‘A’
A2 A A3
b
e
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
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DMN4031SSD
ADVANCE INFORMATION
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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Copyright © 2014, Diodes Incorporated
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DMN4031SSD
Document number: DS35410 Rev. 4 - 2
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