Mitsubishi CM600HG-90H Hvigbt modules high power switching use insulated type Datasheet

MITSUBISHI HVIGBT MODULES
CM600HG-90H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM600HG-90H
● IC .................................................................. 600 A
● VCES ...................................................... 4500 V
● High Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130 ±0.5
(4)
(2)
C
C
E
(3)
E
(1)
4-M8 NUTS
57 ±0.25
17 ±0.1
57 ±0.25
4
2
3
1
9 ±0.1
>PET+PBT<
E
>PET+PBT<
G
28.5 ±0.5
42.5 ±0.5
41 ±0.5
61.2 ±0.5
18 ±0.3
screwing depth
min. 7.7
16.5 ±0.3
screwing depth
min. 16.5
5 ±0.15
+1.0
0
LABEL
38
40.4 ±0.5
6-φ7 MOUNTING HOLES
30.7 ±0.5
+1.0
0
3-M4 NUTS
C
48
CIRCUIT DIAGRAM
22 ±0.3
140 ±0.5
G
E
124 ±0.25
44 ±0.3
C
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
1
MITSUBISHI HVIGBT MODULES
CM600HG-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICM
IE
IEM
Pc
Viso
Ve
Tj
Top
Tstg
tpsc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
Conditions
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
DC, Tc = 100°C
Pulse
DC
Pulse
Tc = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC
Ratings
4500
± 20
600
1200
600
1200
7500
10200
5100
–40 ~ +150
–40 ~ +125
–40 ~ +125
10
(Note 1)
(Note 1)
Maximum power dissipation (Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating temperature
Storage temperature
Maximum short circuit pulse width VCC = 3200V, VCE ≤ VCES, VGE = 15V, Tj = 125°C
Unit
V
V
A
A
A
A
W
V
V
°C
°C
°C
µs
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Tj = 25°C
Tj = 125°C
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
IGES
Cies
Coes
Cres
Qg
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation
voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
(Note 5)
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 5)
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 2), (Note 5)
VCE = 10 V, IC = 60 mA, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
VCE(sat)
td(on)
tr
Eon(10%)
td(off)
tf
Eoff(10%)
VEC
trr
Qrr
Erec(10%)
VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C
VCC = 2250 V, IC = 600 A, VGE = ±15 V, Tj = 25°C
IC = 600 A
(Note 4) Tj = 25°C
VGE = 15 V
Tj = 125°C
VCC = 2250 V, IC = 600 A, VGE = ±15 V
RG = 15 Ω, Tj = 125°C, Ls = 120 nH
Inductive load
VCC = 2250 V, IC = 600 A, VGE = ±15 V
RG = 15 Ω, Tj = 125°C, Ls = 120 nH
Inductive load
IE = 600 A
VGE = 0 V
(Note 4)
VCC = 2250 V, IE = 600 A, VGE = ±15 V
RG = 15 Ω, Tj = 125°C, Ls = 120 nH
Inductive load
Tj = 25°C
Tj = 125°C
Min
—
—
5.0
—
—
—
—
—
—
—
—
—
Limits
Typ
—
8
6.0
—
108
8
2.4
10
3.45
3.70
—
—
Max
3.5
35
7.0
0.5
—
—
—
—
—
—
2.40
1.20
—
2.80
—
J/P
—
—
—
—
6.00
1.20
µs
µs
—
1.70
—
J/P
—
—
4.80
4.15
—
—
V
—
—
1.80
µs
—
610
—
µC
—
0.67
—
J/P
Unit
mA
V
µA
nF
nF
nF
µC
V
µs
µs
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
2
MITSUBISHI HVIGBT MODULES
CM600HG-90H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Item
Thermal resistance
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm
Min
—
—
—
Limits
Typ
—
—
9.0
Max
16.5
33.0
—
Min
7.0
3.0
1.0
—
600
26
56
—
—
Limits
Typ
—
—
—
1.00
—
—
—
27
0.19
Max
15.0
6.0
3.0
—
—
—
—
—
—
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
Mt
m
CTI
da
ds
LP CE
RCC’+EE’
Item
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Internal inductance
Internal lead resistance
Conditions
M8: Main terminals screw
M6: Mounting screw
M4: Auxiliary terminals screw
Tc = 25°C
Unit
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
3
MITSUBISHI HVIGBT MODULES
CM600HG-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
1200
1200
VCE = 20V
Tj = 125°C
VGE = 20V
1000
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
1000
VGE = 15V
800
VGE = 12V
VGE = 10V
600
VGE = 8V
400
200
800
600
400
200
Tj = 25°C
Tj = 125°C
0
0
1
2
3
4
5
0
6
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
1200
12
10
1200
VGE = 15V
1000
EMITTER CURRENT (A)
COLLECTOR CURRENT (A)
1000
800
600
400
200
800
600
400
200
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
0
0
1
2
3
4
5
0
6
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0
1
2
3
4
5
6
7
8
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
4
MITSUBISHI HVIGBT MODULES
CM600HG-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
103
20
7
5
VCE = 2250V, IC = 600A
Tj = 25°C
3
2
15
CAPACITANCE (nF)
GATE-EMITTER VOLTAGE (V)
Cies
102
7
5
3
2
101
7
5
3
2
Coes
100
Cres
7
5
3
2
2 3
5 7 100
2 3
5
0
-5
-10
VGE = 0V, Tj = 25°C
f = 100kHz
10-1 -1
10
10
5 7 101
2 3
-15
5 7 102
0
5
10
15
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (µC)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
8
10
VCC = 2250V, IC = 600A
VGE = ±15V, Tj = 125°C
Inductive load
VCC = 2250V, VGE = ±15V
RG = 15Ω, Tj = 125°C
Inductive load
SWITCHING ENERGIES (J/P)
SWITCHING ENERGIES (J/P)
8
6
Eon
4
Eoff
2
Eon
6
4
Eoff
2
Erec
0
0
500
1000
Erec
0
1500
0
10
20
30
40
50
60
GATE RESISTOR (Ω)
COLLECTOR CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
5
MITSUBISHI HVIGBT MODULES
CM600HG-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS
(TYPICAL)
102
7
5
102
VCC = 2250V, VGE = ±15V
RG = 15Ω, Tj = 125°C
Inductive load
7
5
REVERSE RECOVERY TIME (µs)
3
SWITCHING TIMES (µs)
2
101
7
5
td(off)
tf
3
2
td(on)
100
104
VCC = 2250V, VGE = ±15V
RG = 15Ω, Tj = 125°C
Inductive load
7
5
3
3
2
2
101
103
lrr
7
5
7
5
3
3
2
2
trr
100
102
7
5
7
5
3
3
3
2
2
2
7
5
tr
10-1 1
10
2 3 4 5 7 102
2 3 4 5 7 103
10-1 1
10
2 3 4 5 7 104
2 3 4 5 7 102
REVERSE RECOVERY CURRENT (A)
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS
(TYPICAL)
101
2 3 4 5 7 103
2 3 4 5 7 104
EMITTER CURRENT (A)
COLLECTOR CURRENT (A)
1.2
Rth(j–c)Q = 16.5K/kW
Rth(j–c)R = 33.0K/kW
1.0
n
0.8
Z th( j –c ) ( t ) =
0.6
0.4
Ri 1–exp
Σ
i=1


NORMALIZED TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
–
t

ti 
1
2
3
4
Ri [K/kW]
0.0059
0.0978
0.6571
0.2392
τ i [sec]
0.0002
0.0074
0.0732
0.4488
0.2
0 -3
10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101
TIME (s)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
6
MITSUBISHI HVIGBT MODULES
CM600HG-90H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
SHORT CIRCUIT
SAFE OPERATING AREA
(SCSOA)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
8000
1500
VCC ≤ 3200V, VGE = ±15V
Tj = 125°C, RG ≥ 15Ω
VCC ≤ 3200V, VGE = ±15V
Tj = 125°C, RG ≥ 15Ω
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
HIGH POWER SWITCHING USE
INSULATED TYPE
1000
500
0
1000
2000
3000
4000
6000
4000
2000
0
5000
COLLECTOR-EMITTER VOLTAGE (V)
0
1000
2000
3000
4000
5000
COLLECTOR-EMITTER VOLTAGE (V)
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
REVERSE RECOVERY CURRENT (A)
1500
VCC ≤ 3200V, di/dt ≤ 2200A/µs
Tj = 125°C
1000
500
0
0
1000
2000
3000
4000
5000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
7
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