Common-Drain Dual N-Channel Trench MOSFET 20V,6.4A,8.3 mΩ General Description Features The MDWC0337E uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance and excellent reliability. Excellent low RSS(ON), low gate charge operation and operation for Battery Application. - VSS = 20V - Source-Source ON Resistance; RSS(ON) typ. 8.3mΩ @ VGS = 4.5V RSS(ON) typ. 8.8mΩ @ VGS = 3.8V RSS(ON) typ. 9.9mΩ @ VGS = 3.1V RSS(ON) typ. 12.1mΩ @ VGS = 2.5V Applications - Portable Battery Protection Module Top View 3. Gate(FET2) 4. Source(FET2) 1. Source (FET1) 2. Gate(FET1) 1.88mm*1.88mm WLCSP Absolute Maximum Ratings (Ta = 25oC unless otherwise noted) Characteristics Symbol Rating Units Source-Source Voltage VSSS 20 V Gate-Source Voltage VGSS ±8 V *1 DC IS 6.4 A Pulse*2 ISp 63 A Source Current *1 Total Power Dissipation DC Channel Temperature Junction and Storage Temperature Range PD 0.8 W Tch 150 o -55~150 o TJ, Tstg C C Thermal Characteristics Characteristics Thermal Resistance DC*1 Symbol Typ. 1 Unit 121 o 157 o RθJA Max. May. 2016. Rev 1.0 Rating C/W C/W MagnaChip Semiconductor Ltd. MDWC0337E– Common-Drain Dual N-Channel Trench MOSFET 20V MDWC0337E Part Number Temp. Range Package Packing RoHS Status MDWC0337ERH -55~150oC WLCSP Tape and Reel Halogen Free Electrical Characteristics (Ta =25oC unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Units Static Characteristics Source-Source Breakdown Voltage BVSSS IS = 500μA, VGS = 0V 20 - - Gate Threshold Voltage VGS(th) VSS = VGS, IS = 1mA 0.5 1.0 1.5 Cut-Off Current ISSS VSS = 20V, VGS = 0V - - 1.0 μA Gate Leakage Current IGSS VGS = ±8V, VSS = 0V - - 10 μA VGS = 4.5V, IS = 2.5A 5.8 8.3 11.9 VGS = 3.8V, IS = 2.5A 6.0 8.8 12.9 VGS = 3.1V, IS = 2.5A 6.2 9.9 15.8 VGS = 2.5V, IS = 2.5A 6.5 12.1 22.6 - 28.0 - - 3.5 - Source-Source Resistance RSS(ON) *3 V mΩ Dynamic Characteristics Total Gate Charge Qg VDS = 10V, ID = 2.5A, VGS = 4.5V Gate-Source Charge Qgs Gate-Drain Charge Qgd - 13.0 - Input Capacitance Ciss - 1924 - VDS = 10V, VGS = 0V, f = 1MHz Reverse Transfer Capacitance Crss - 524 - Output Capacitance Coss - 620 - Turn-On Delay Time td(on) - 85 - tr - 280 - - 2600 - - 5850 - 0.40 0.65 1.0 Rise Time Turn-Off Delay Time Fall Time td(off) VGS = 4.5V, VDS = 10V, ID = 5A, RGEN = 3Ω tf nC pF ns Drain-Source Body Diode Characteristics Source-Source Diode Forward Voltage VF(S-S) IS = 1.0A, VGS = 0V V Note *1. Mounted on FR4 board “jesd51-7” (76.2mm x 114.3mm x t1.6mm), *2. t= 10us, Duty Cycle ≤ 1% *3. Rsson is guaranteed by design, not subject to production testing. May. 2016. Rev 1.0 2 MagnaChip Semiconductor Ltd. MDWC0337E– Common-Drain Dual N-Channel Trench MOSFET 20V Ordering Information 3.8V 3.1V 8 IS, Source Current [A] Source-Source On-Resistance [mOhm] VGS = 4.5V 2.5V 2.0V 6 4 2 0 0.00 0.05 0.10 0.15 20 2.0V 15 2.5V 3.8V VGS = 4.5V 5 0.20 3.1V 10 1 2 3 4 VSS, Source-Source Voltage [V] 1.6 RSS(ON) [mOhm], 1.0 0.8 0.6 -50 0 50 100 Source-Source On-Resistance Normalized Drain-Source On-Resistance 1.2 8 9 20 15 10 5 0 150 * Notes : IS = 2.5A 25 1 2 TJ, Junction Temperature (،)ة IDR, Reverse Drain Current [A] 10 4 3 2 1 1 2 * Notes : VGS = 0V 1 0.1 0.0 3 VGS, Gate-Source Voltage [V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] Fig.5 Transfer Characteristics May. 2016. Rev 1.0 4 Fig.4 On-Resistance Variation with Gate to Source Voltage * Notes : VSS = 5V 0 3 VGS, Gate to Source Volatge [V] Fig.3 On-Resistance Variation with Temperature IS, Source Current [A] 7 30 1.4 0 6 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 5 5 IS, Source Current [A] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDWC0337E– Common-Drain Dual N-Channel Trench MOSFET 20V 10 Ciss = Cgs + Cgd (Cds = shorted) * Note : IS = 2.5A Coss = Cds + Cgd 2500 3 2 2000 1500 2. f = 1 MHz Crss 500 0 5 10 15 20 0 25 0 5 QG, Total Gate Charge [nC] 15 20 Fig.8 Capacitance Characteristics 3 10 1 10 Thermal Response (Normalized) Operation in This Area is Limited by R SS(on) (VGS=3.8V) 2 10 IS, Source Current [A] 10 VDS, Drain-Source Voltage [V] Fig.7 Gate Charge Characteristics 100 s 1 10 1 ms 10 ms 0 10 100 ms 1000 ms -1 1s 10 Single Pulse TJ=Max Rated 0 10 D=0.5 0.2 -1 10 0.1 0.05 0.02 -2 10 0.01 * Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * ZthJA * RthJA(t) + TA DC single pulse o TA=25 C -2 10 * Notes ; 1. VGS = 0 V Coss 1000 1 0 Crss = Cgd Ciss 4 Capacitance [pF] VGS, Gate-Source Voltage [V] VDD = 10V -3 -1 0 10 10 1 10 10 2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 VSSSource-Source Voltage [V] t1, Rectangular Pulse Duration [sec] Fig.9 Maximum Safe Operating Area Fig.10 Transient Thermal Response Curve May. 2016. Rev 1.0 4 MagnaChip Semiconductor Ltd. MDWC0337E– Common-Drain Dual N-Channel Trench MOSFET 20V 3000 5 WLCSP POD(Package Outline Dimension) Unit: mm Note * PKG BODY SIZES EXCLUDE FLASH & BURRS * THE DIRECTION OF VIEW May. 2016. Rev 1.0 5 MagnaChip Semiconductor Ltd. MDWC0337E– Common-Drain Dual N-Channel Trench MOSFET 20V Package Dimension MDWC0337E– Common-Drain Dual N-Channel Trench MOSFET 20V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. May. 2016. Rev 1.0 6 MagnaChip Semiconductor Ltd.