CHA2494-98F RoHS COMPLIANT 34-44GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2494-98F is a wide band monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vg RFin RFout Vd Noise figure versus temperature Main Features 10 9 -40°C ■ Broadband performances: 34-44GHz ■ 3dB noise figure ■ 20dB gain ■ 20dBm Output IP3 ■ DC bias: Vd=4V @ Id=80mA ■ Chip size 2.59x1.16x0.1mm +25°C +85°C 8 Noise figure (dB) 7 6 5 4 3 2 1 0 32 34 36 38 40 42 44 46 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure OIP3 3rd order intercept point Ref. : DSCHA24941144 - 24 May 11 Min 34 Typ 20 3.0 20 1/12 Max 44 Unit GHz dB dB dBm Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA2494-98F 34-44GHz Low Noise Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +4V Symbol Parameter Freq Frequency range Min 34 Typ Max 44 Unit GHz Gain Linear Gain 20 dB NF Noise Figure 3.0 dB RLlin Input Return Loss -8 dB RLout Output Return Loss -8 dB Output 3 order intercept point 20 dBm Output Power @1dB comp. 12 dBm OIP3 OP1dB rd Vg Gate voltage -0.45 V Id Drain current 80 mA These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. A bonding wire of typically 0.3 to 0.4nH will improve the matching at the accesses. Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Vd Drain bias voltage Parameter Values 4.5V Unit V Id Drain bias current 160 mA Vg Gate bias voltage -2 to +0.4 V Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +150 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. Typical Bias Conditions Tamb.= +25°C Symbol Parameter Vd DC drain voltage Id DC drain current controlled with Vg Vg DC gate voltage Ref. : DSCHA24941144 - 24 May 11 2/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Values 4 80 -0.45 Unit V mA V Specifications subject to change without notice CHA2494-98F 34-44GHz Low Noise Amplifier Typical on wafer Measurements Tamb = +25°C, Vd = +4V, Id = 80mA Sij parameters 25 20 S parameters (dB) 15 10 5 S21 S11 S22 0 -5 -10 -15 -20 20 25 30 35 40 45 50 Frequency (GHz) Noise figure 10 9 8 Noise figure (dB) 7 6 5 4 3 2 1 0 34 35 36 37 38 39 40 Frequency (GHz) Ref. : DSCHA24941144 - 24 May 11 3/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA2494-98F 34-44GHz Low Noise Amplifier Typical Test Fixture Measurements Tamb = +25°C, Vd = +4V, Id = 80mA Gain versus frequency & temperature 30 28 26 24 22 Gain (dB) 20 18 16 14 12 10 8 6 +25°C -40°C +85°C 4 2 0 30 32 34 36 38 40 42 44 46 48 50 44 46 48 50 Frequency (GHz) Return loss versus frequency 0 -5 Return Loss (dB) -10 -15 -20 -25 -30 -35 Input return loss Output return loss -40 30 32 34 36 38 40 42 Frequency (GHz) Ref. : DSCHA24941144 - 24 May 11 4/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA2494-98F 34-44GHz Low Noise Amplifier Typical Test Fixture Measurements Tamb = +25°C, Vd = +4V, Id = 80mA Noise figure versus frequency & temperature 10 9 -40°C +25°C +85°C 8 Noise figure (dB) 7 6 5 4 3 2 1 0 32 34 36 38 40 42 44 46 Frequency (GHz) Output Power @ 1dB comp. versus temperature at 120mA 30 30 28 28 26 26 24 24 Pout at 1dB comp. (dBm) Pout at 1dB comp. (dBm) Output Power @ 1dB comp. versus temperature at 80mA 22 20 18 16 14 12 10 8 6 25 C 4 -40 C +85 C 22 20 18 16 14 12 10 8 6 25 C 4 -40 C +85 C 2 2 0 0 34 36 38 40 42 44 34 Ref. : DSCHA24941144 - 24 May 11 36 38 40 42 44 Frequency (GHz) Frequency (GHz) 5/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA2494-98F 34-44GHz Low Noise Amplifier Typical Test Fixture Measurements Tamb = +25°C, Vd = +4V, Id = 80mA Output IP3 versus frequency at 120mA 32 30 30 28 28 26 26 24 24 22 22 20 20 OIP3 (dBm) OIP3 (dBm) Output IP3 versus frequency at 80mA 32 18 16 14 12 18 16 14 12 10 10 8 34GHz 6 36GHz 38GHz 40GHz 42GHz 8 44GHz 34GHz 36GHz 40GHz 42GHz 44GHz 4 2 2 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -30 -28 -26 -24 Input Power DCL (dBm) -22 -20 -18 -16 -14 -12 -14 -12 Input Power DCL (dBm) Output IP3 versus temperature at 80mA & 40GHz Output IP3 versus temperature at 120mA & 40GHz 32 32 30 30 28 28 26 26 24 24 22 22 20 20 OIP3 (dBm) OIP3 (dBm) 38GHz 6 4 18 16 14 12 18 16 14 12 10 10 8 +85°C 6 +25°C 8 -40°C +85°C 6 4 +25°C -40°C 4 2 2 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -30 Input Power DCL (dBm) -28 -26 -24 -22 -20 -18 -16 Input Power DCL (dBm) Linear gain versus current 32 30 28 26 24 Linear Gain (dB) 22 20 18 16 14 12 10 8 80mA 6 120mA 4 2 34 35 36 37 38 39 40 41 42 43 44 Frequency (GHz) Ref. : DSCHA24941144 - 24 May 11 6/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA2494-98F 34-44GHz Low Noise Amplifier Mechanical data Note: Supply feed should be bypassed. 25µm diameter gold wire is to be preferred. Chip thickness: 100µm DC pad size: 86x83µm RF pad size: 105x172µm Chip size: 2590x1160 ±35µm All dimensions are in micrometers Ref. : DSCHA24941144 - 24 May 11 7/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA2494-98F 34-44GHz Low Noise Amplifier Recommended assembly plan To Vg DC supply feed 120pF RFout RFin To Vd DC supply feed 120pF To Vd DC supply feed Note: Supply feed should be bypassed. 25µm diameter gold wire is to be preferred. Recommended circuit bonding table Label VD VG Type Vd Vg Ref. : DSCHA24941144 - 24 May 11 Decoupling 120pF 120pF Comment Drain Supply Gate Supply 8/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice 34-44GHz Low Noise Amplifier CHA2494-98F Evaluation mother board ■ Based on typically Ro4003 / 8mils or equivalent. ■ Decoupling capacitors of 120pF are recommended for all DC accesses. ■ The board losses are estimated from 2 to 3dB in the frequency range. VG RF IN RF OUT VD Ref. : DSCHA24941144 - 24 May 11 9/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA2494-98F 34-44GHz Low Noise Amplifier DC Schematic LNA: 4V, 80mA Vd = 4V 1.9k 1.9k 16 15mA 10mA 25mA 30mA 90 150 550 26 34 16 530 1.5k 1.5k 500 Vg # -0.45V x4 Ref. : DSCHA24941144 - 24 May 11 10/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA2494-98F 34-44GHz Low Noise Amplifier Notes Due to ESD protection circuits on RF input and output, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses. Vg RFin RFout Vd ESD protections is also implemented on gate access common to 3rd and 4th stage (1st and 2nd stage are self-biased). Due to BCB coating on the chip, qualification domain implies the chip must be glued. Biasing conditions: Vg could be tuned to reach 120mA in order to increase the output power and the gain (see pages 5 & 6). The current has no influence on Noise figure. Ref. : DSCHA24941144 - 24 May 11 11/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA2494-98F 34-44GHz Low Noise Amplifier Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS package products. Ordering Information Chip form: CHA2494-98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA24941144 - 24 May 11 12/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice