NTNS4C69N Small Signal MOSFET 30 V, 820 mA, Single N−Channel SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package Features • Single N−Channel MOSFET • Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for www.onsemi.com Extremely Thin Environments such as Portable Electronics • Low RDS(on) Solution in Ultra Small 1.0 x 0.6 mm Package • 1.8 V Gate Drive • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS MOSFET RDS(on) MAX V(BR)DSS 0.155 W @ 4.5 V Compliant 0.168 W @ 3.7 V Applications • • • • ID MAX 0.180 W @ 3.3 V 30 V High Side Switch High Speed Interfacing Level Shift and Translate Optimized for DC−DC Converter Power Management in Ultra Portable Solutions 0.220 W @ 2.5 V 0.450 W @ 1.8 V N−Channel MOSFET D (3) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS ±12 V ID 820 mA Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C 590 t≤5s TA = 25°C 970 Steady State TA = 25°C t≤5s TA = 25°C Pulsed Drain Current tp = 10 ms PD mW 156 mA TJ, TSTG -55 to 150 °C Source Current (Body Diode) (Note 2) IS 156 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient – Steady State (Note 1) RθJA 800 °C/W Junction-to-Ambient – t ≤ 5 s (Note 1) RθJA 570 1. Surface Mounted on FR4 Board using the minimum recommended pad size, (or 2 mm2), 1 oz Cu. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. January, 2016 − Rev. 0 MARKING DIAGRAM 220 2.4 © Semiconductor Components Industries, LLC, 2016 G (1) S (2) IDM Operating Junction and Storage Temperature 820 mA 1 3 2 1 SOT−883 (XDFN3) CASE 506CB AA M AA = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping† NTNS4C69NTCG SOT−883 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTNS4C69N/D NTNS4C69N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min 30 Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = 12 V VGS(TH) VGS = VDS, ID = 10 mA V 17 TJ = 25°C mV/°C 1.0 mA 100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH)/TJ 0.65 1.1 −3.0 RDS(on) VGS = 4.5 V, ID = 300 mA 0.127 0.155 VGS = 3.7 V, ID = 250 mA 0.135 0.168 VGS = 3.3 V, ID = 200 mA 0.140 0.180 VGS = 2.5 V, ID = 150 mA 0.170 0.220 VGS = 1.8 V, ID = 100 mA 0.300 0.450 Forward Transconductance gFS VDS = 5 V, ID = 200 mA 2.0 Source−Drain Diode Voltage VSD VGS = 0 V, IS = 100 mA 0.7 V mV/°C W S 1.0 V CHARGES & CAPACITANCES Input Capacitance CISS 75 VGS = 0 V, f = 1 MHz, VDS = 15 V Output Capacitance COSS Reverse Transfer Capacitance CRSS 3.0 Total Gate Charge QG(TOT) 0.9 Threshold Gate Charge QG(TH) 0.1 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 4.5 V, VDS = 15 V, ID = 200 mA pF 34 nC 0.2 0.1 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 4.5 VGS = 4.5 V, VDD = 15 V, ID = 200 mA, RG = 2 W tf ns 3.5 9.0 7.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTNS4C69N TYPICAL CHARACTERISTICS 4.5 5 3 2.2 V 2 2.0 V 1 1.8 V 0 1.6 V 1.4 V 4.0 4.5 5.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 3.5 3.0 2.5 2.0 TJ = 25°C 1.5 1.0 TJ = 125°C 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = 0.3 A 400 350 300 250 200 150 100 2.5 2.0 3.0 3.5 4.0 4.5 5.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 400 380 360 340 320 300 280 260 240 220 200 180 160 140 120 100 3.0 TJ = 25°C VGS = 1.8 V VGS = 3.7 V VGS = 2.5 V VGS = 3.3 V VGS = 4.5 V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.6 1.5 TJ = −55°C 0 450 1.5 VDS = 5 V 0.5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 2.5 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (Normalized) 4.0 4 10,000 VGS = 10 V ID = 0.3 A TJ = 25°C 1000 1.4 IDSS, LEAKAGE (nA) ID, DRAIN CURRENT (A) VGS = 4.5 V to 2.9 V 1.3 1.2 1.1 1.0 TJ = 85°C 100 TJ = 125°C 10 1 0.9 0.1 0.8 0.7 −50 TJ = 150°C 0.01 −25 0 25 50 75 100 125 150 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTNS4C69N TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 1000 VGS = 0 V TJ = 25°C f = 1 MHz Ciss 100 Coss 10 Crss 1 0 5 10 15 20 25 VDS = 15 V ID = 0.2 A TJ = 25°C 9 8 7 6 5 4 3 QGS QGD 2 1 0 0 30 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge 100 2.0 1 VGS = 0 V IS, SOURCE CURRENT (A) VGS = 4.5 V VDS = 15 V ID = 0.2 A t, TIME (ns) 10 td(off) tf 10 td(on) tr 1 0.1 TJ = 125°C TJ = 25°C TJ = −55°C 0.01 0.001 1 10 0.3 100 0.4 0.5 0.6 0.7 0.8 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current www.onsemi.com 4 0.9 NTNS4C69N PACKAGE DIMENSIONS SOT−883 (XDFN3), 1.0x0.6, 0.35P CASE 506CB ISSUE A ÉÉÉ ÉÉÉ 0.10 C 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. EXPOSED COPPER ALLOWED AS SHOWN. A B D PIN ONE REFERENCE E DIM A A1 b D D2 e E E2 L TOP VIEW NOTE 3 0.10 C A MILLIMETERS MIN MAX 0.340 0.440 0.000 0.030 0.075 0.200 0.950 1.075 0.620 BSC 0.350 BSC 0.550 0.675 0.425 0.550 0.170 0.300 0.10 C 3X A1 SIDE VIEW C RECOMMENDED SOLDER FOOTPRINT* SEATING PLANE 1.10 D2 2X 0.43 1 0.41 0.55 E2 e/2 1 e b C A B 2X 0.10 0.05 M M C 3X 2X L 0.20 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BOTTOM VIEW ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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