NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power • 6W linear power @ 2.0% EVM for single carrier OFDM, 10.3dB peak/avg, 3.5MHz channel bandwidth, 12dB gain, 18% efficiency • Qualified for operation up to 32V • 100% RF tested • Thermally enhanced industry standard package • High reliability gold metallization process • Lead-free and RoHS compliant • Subject to 3A001b.3.a Export Control 3300 - 3800 MHz 65 Watt, 28 Volt GaN HEMT RF Specifications (CW): VDS = 28V, IDQ = 750mA, Frequency = 3500MHz, TC = 25°C, Measured in Nitronex Test Fixture Symbol Parameter P3dB Average Output Power at 3dB Compression GSS Min Typ Max Units - 65 - W Small Signal Gain 11 12.5 13.5 dB h Drain Efficiency at 3dB Compression 40 45 - % Y Output Mismatch Stress, VSWR = 10:1, all phase angles at 3500MHz) No Performance Degradation After Test Typical 2-Tone Performance: VDS = 28V, IDQ = 750mA, Frequency = 3500MHz, Tone Spacing = 0.1MHz, TC = 25°C Measured in Load-Pull System Symbol Parameter Typ Units P3dB,PEP Peak Envelope Power at 3dB Compression 93 W P1dB,PEP Peak Envelope Power at 1dB Compression 55 W Peak Envelope Power at -35dBm IMD3 71 W PIMD3 Typical OFDM Performance: VDS = 28V, IDQ = 750mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 MHz channel bandwidth. Peak/Avg. = 10.3dB @ 0.01% probability on CCDF. Frequency = 3400 - 3600MHz. POUT,AVG = 6W, TC = 25°C. Measured in Nitronex Test Fixture Symbol GP h EVM NPT35050A Parameter Typ Units Power Gain 12 dB Drain Efficiency 18 % Error Vector Magnitude 2.0 % Page 1 NDS-003 Rev.3, April 2013 NPT35050A DC Specifications: TC=25°C Symbol Parameter Min Typ Max Units 100 - - V - - 18 mA Off Characteristics VBDS Drain-Source Breakdown Voltage (VGS=-8V, IDQ=36mA) IDLK Drain-Source Leakage Current (VGS=-8V, VDS=60V) On Characteristics VT Gate Threshold Voltage (VDS = 28V, IDQ = 36mA) -2.3 -1.8 -1.3 V VGSQ Gate Quiescent Voltage (VDS = 28V, IDQ = 750mA) -2.0 -1.5 -1.0 V RON On Resistance (VGS = 2V, IDQ = 270mA) - 0.13 0.15 W Drain Current (VDS = 7V pulsed, 300ms pulse width, 0.2% duty cycle, VGS=2V) - 19.5 - A ID Absolute Maximum Ratings: Not simultaneous, TC=25°C unless otherwise noted Symbol Parameter Max Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage -10 to 3 V 90 W PT Total Device Power Dissipation (Derated above 25°C) qJC Thermal Resistance (Junction-to-Case) TSTG TJ Storage Temperature Range Operating Junction Temperature 1.95 °C/W -65 to 150 °C 200 °C HBM Human Body Model ESD Rating (per JESD22-A114) 1C (>1000V) MM Machine Model ESD Rating (per JESD22-A115) M3 (>200V) NPT35050A Page 2 NDS-003 Rev.3, April 2013 NPT35050A Table 1: Optimum Impedance Characteristics for OFDM Tuning (VDS=28V, IDQ=750 mA). Frequency (MHz) ZS (W) ZL (W) 3300 5.0 + j1.5 5.5 - j11.0 3400 5.2 + j1.2 6.4 - j12.3 3500 6.0 + j0.5 8.9 - j14.9 3600 6.4 - j0.2 11.6 - j17.2 3700 8.2 - j2.1 14.0 - j20.1 3800 10.0 - j4.0 16.3 - j22.6 ZS is the source impedance presented to the device. ZL is the load impedance presented to the device. Figure 1 - Optimal Impedances for OFDM Performance - VDS = 28V, IDQ = 750mA NPT35050A Page 3 NDS-003 Rev.3, April 2013 NPT35050A Marker 1 -25.09 dBm 3.5 GHz -10 1 -20 -30 dBm -40 -50 -60 -70 -80 -90 3489.50 Mhz 1.75 MHz/div 3510.50 MHz Figure 2 - Typical OFDM Performance in Nitronex Demonstration Board Figure 3 - ETSI Mask Compliance in Nitronex Demonstration Board, 3500MHz and POUT = 6W Figure 4 - Typical OFDM Performance in Load-Pull System, POUT = 6W Figure 5 - Typical OFDM Performance at 3500MHz versus IDQ NPT35050A Page 4 NDS-003 Rev.3, April 2013 NPT35050A Figure 6 - Typical Device Linearity over Temperature in Nitronex Demonstration Board, VDS = 28V, IDQ = 750mA, 3400MHz Figure 7 - Typical Device Gain and Efficiency over Temperature in Nitronex Demonstration Board, VDS = 28V, IDQ = 750mA, 3400MHz Figure 8 - Typical IMD3 Performance at VDS = 28V, IDQ = 750mA, 3500MHa Figure 9 - Typical S11 and S21 in Nitronex Demonstration Board, PIN = 0 dBm, VDS = 28V, IDQ = 750mA NPT35050A Page 5 NDS-003 Rev.3, April 2013 NPT35050A Figure 10 - Power Sweeps for CW, pulsed CW, and PEP, VDS = 28V, IDQ = 750mA, 3500MHz, Constant Impedance States for All Sweeps Figure 11 - Power Sweeps for CW, pulsed CW, and PEP at VDS = 28V, IDQ = 750mA, 3500MHz, Constant Impedance States for All Sweeps Total Power Dissipation (W) 100 80 60 40 20 0 0 50 100 150 200 Case Temperature (°C) Figure 12 - CW Power Sweep, VDS = 28V, IDQ = 750mA, 3500MHz NPT35050A Figure 13 - Power Derating Curve Page 6 NDS-003 Rev.3, April 2013 NPT35050A V DRAIN NPT 3 5 0 5 0 A 035274R G0 4 1 2 V GATE RF IN RF OUT Nitronex NPT35050 - WN2 8/16/2006 Figure 14 - APP-NPT35050A-35 Demonstration Board NPT35050A Page 7 NDS-003 Rev.3, April 2013 NPT35050A C2 C16 V GATE IC1 P1 C1 R1 C9 R2 C3 C4 C5 C11 C10 W=100mil L=500mil W=100mil L=500mil C7 C8 RF OUT RF IN W=175mil L=50mil C6 C17 C13 C12 W=68mil L=720mil V DRAIN R3 W=550mil L=210mil W=680mil L=450mil W=140mil L=245mil W=140mil L=205mil W=68mil L=50mil W=68mil L=440mil C15 C14 W=68mil L=390mil Figure 15 - APP-NPT35050A-35 Demonstration Board Equivalent Circuit Table 1: APP-NPT35050A-35 Demonstration Board Bill of Materials Component Value ID C1, C2, C3 10 uF 16V Ceramic X7R (1210) C4, C7 0.01 uF 100V Ceramic X7R (1206) C5, C8 0.10 uF 100V Ceramic X7R (1206) C6, C9 1.0 uF 100V CeramicX7R (1812) C10, C11, C12, C13 5.6 pF ATC600F5R6CT C14 1.0 pF ATC600F1R0AT C15 1.5 pF ATC600F1R5AT C16 150uF C17 270uF R1 12k ohm 0603 R2 10 ohm 0805 R3 0.33 ohm 0805 P1 20k ohm Potentiometer - Bourns (3224 series) 16V, Aluminum Electrolytic - Nichicon (PW) 63V, Aluminum Electrolytic - UCC (LXY) IC1 Substrate NPT35050A IC LT1964-BYP Taconic RF35 Page 8 t=30mil, er=3.5, 1 oz. Cu NDS-003 Rev.3, April 2013 NPT35050A Ordering Information1 Part Number NPT35050AB Description NPT35050A in AC780B-2 Metal-Ceramic Bolt-Down Package 1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com Figure 16 - AC780B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm]) NPT35050A Page 9 NDS-003 Rev.3, April 2013 NPT35050A Nitronex, LLC 2305 Presidential Drive Durham, NC 27703 USA +1.919.807.9100 (telephone) +1.919.807.9200 (fax) [email protected] www.nitronex.com Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). Important Notice Nitronex, LLC reserves the right to make corrections, modifications, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to Nitronex terms and conditions of sale supplied at the time of order acknowledgment. The latest information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at www.nitronex.com. Nitronex warrants performance of its packaged semiconductor or die to the specifications applicable at the time of sale in accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex deems necessary to support the warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. Nitronex assumes no liability for applications assistance or customer product design. Customers are responsible for their product and applications using Nitronex semiconductor products or services. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. Nitronex does not warrant or represent that any license, either express or implied, is granted under any Nitronex patent right, copyright, mask work right, or other Nitronex intellectual property right relating to any combination, machine or process in which Nitronex products or services are used. Reproduction of information in Nitronex data sheets is permitted if and only if said reproduction does not alter any of the information and is accompanied by all associated warranties, conditions, limitations and notices. Any alteration of the contained information invalidates all warranties and Nitronex is not responsible or liable for any such statements. Nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical implants into the body or any other application intended to support or sustain life. Should Buyer purchase or use Nitronex Corporation products for any such unintended or unauthorized application, Buyer shall indemnify and hold Nitronex Corporation, its officers, employees, subsidiaries, affiliates, distributors, and its successors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, notwithstanding if such claim alleges that Nitronex was negligent regarding the design or manufacture of said products. Nitronex and the Nitronex logo are registered trademarks of Nitronex, LLC. All other product or service names are the property of their respective owners. © Nitronex, LLC 2012. All rights reserved. NPT35050A Page 10 NDS-003 Rev.3, April 2013