N-Channel MOSFET 500V, 7.0 A, 0.9Ω General Description Features The MDP/F7N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. VDS = 500V ID = 7.0A RDS(ON) ≤ 0.9Ω MDP/F7N50B is suitable device for SMPS, high Speed switching and general purpose applications. Applications @VGS = 10V @VGS = 10V Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Drain-Source Voltage VDSS Gate-Source Voltage TC=25 C Continuous Drain Current ID o TC=100 C (1) IDM o TC=25 C Power Dissipation o Derate above 25 C (1) Repetitive Avalanche Energy Peak Diode Recovery dv/dt (3) (4) Single Pulse Avalanche Energy Junction and Storage Temperature Range PD MDF7N50B Unit 500 VGSS o Pulsed Drain Current MDP7N50B V ±30 V 7.0 7.0* A 4.2 4.2* A 28 28* A 114 36 W 0.91 0.29 W/ C o EAR 11.4 mJ dv/dt 4.5 V/ns EAS 270 mJ TJ, Tstg -55~150 o C ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Symbol MDP5N50B MDF5N50B (1) RθJA 62.5 62.5 RθJC 1.1 3.5 Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Jan 2012. Version 1.0 (1) 1 Unit o C/W MagnaChip Semiconductor Ltd. MDP7N50B / MDF7N50B N-channel MOSFET 500V MDP7N50B / MDF7N50B Part Number Temp. Range Package Packing RoHS Status o TO-220 Tube Halogen Free o TO-220F Tube Halogen Free MDP7N50BTH -55~150 C MDF7N50BTH -55~150 C Electrical Characteristics (Ta = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 500 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 - 4.0 IDSS VDS = 500V, VGS = 0V - - 1 µA Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance IGSS V VGS = ±30V, VDS = 0V - - 100 nA RDS(ON) VGS = 10V, ID = 3.5A - 0.76 0.9 Ω gfs VDS = 30V, ID = 3.5A - 7 - S - 14.9 - - 3.3 - - 5.1 - - 760 - - 4.5 - Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 400V, ID = 7.0A, VGS = 10V (3) nC Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss - 97 - Turn-On td(on) - 17 - - 30 - - 98 - tf - 34 - IS - 7.0 - A - - 1.4 V - 260 - ns - 1.7 - µC Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 250V, ID = 7.0A, (3) RG = 25Ω pF ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 7.0A, VGS = 0V IF = 7.0A, dl/dt = 100A/µs (3) Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤7.0A, di/dt≤200A/us, VDD≤BVDSS, Rg =25Ω, Starting TJ=25°C 4. L=10.0mH, IAS=7.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C Jan 2012. Version 1.0 2 MagnaChip Semiconductor Ltd. MDP7N50B / MDF7N50B N-channel MOSFET 500V Ordering Information Vgs=5.0V =5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V 12 1.2 RDS(ON) [Ω ] ID,Drain Current [A] 16 Notes 1. 250㎲ Pulse Test 2. TC=25℃ 8 1.0 VGS=10V VGS=20V 0.8 4 0.6 0.0 0 0 5 10 15 20 2.5 5.0 VDS,Drain-Source Voltage [V] 3.0 12.5 15.0 17.5 1.2 ※ Notes : 1. VGS = 10 V 2. ID = 3.5A 2.5 2.0 1.5 1.0 0.5 0.0 -50 ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 10.0 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 0 50 100 150 1.1 1.0 0.9 0.8 -50 200 0 50 Fig.3 On-Resistance Variation with Temperature ※ Notes : 1. VGS = 0 V 2.250µs Pulse test 150℃ IDR Reverse Drain Current [A] 10 -55℃ 1 25℃ 0.1 3 4 5 6 7 8 150℃ 25℃ 1 0.1 0.2 9 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Jan 2012. Version 1.0 200 Fig.4 Breakdown Voltage Variation vs. Temperature * Notes ; 1. Vds=30V 2 150 TJ, Junction Temperature [ C] T J, Junction Temperature [ C] 10 100 o o ID(A) 7.5 ID,Drain Current [A] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDP7N50B / MDF7N50B N-channel MOSFET 500V 1.4 20 MDP7N50B / MDF7N50B N-channel MOSFET 500V 1400 10 Coss 1200 100V 250V 400V 8 1000 Capacitance [pF] VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 7.0A 6 4 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Ciss 800 600 Crss 400 2 200 0 0 0 2 4 6 8 10 12 14 1 16 2 10 1 Fig.8 Capacitance Characteristics 8 100 µs 10 µs Operation in This Area is Limited by R DS(on) 6 1 ms ID, Drain Current [A] ID, Drain Current [A] Fig.7 Gate Charge Characteristics 10 10 ms 10 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 100 ms DC 0 4 2 -1 Single Pulse TJ=Max rated TC=25℃ 10 0 25 -2 10 -1 10 0 1 2 10 10 50 75 100 125 VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area MDP7N50B (TO-220) Fig.10 Maximum Drain Current vs. Case Temperature 14000 single Pulse RthJC = 1.1℃/W TC = 25℃ 0 10 D=0.5 10000 Power (W) Zθ JC(t), Thermal Response 12000 0.2 0.1 -1 10 0.05 0.02 0.01 -5 -4 10 -3 10 -2 10 -1 10 0 10 0 1E-5 1 10 t1, Rectangular Pulse Duration [sec] 1E-4 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation – MDP7N50B (TO-220) Fig.11 Transient Thermal Response Curve MDP7N50B (TO-220) Jan 2012. Version 1.0 6000 2000 -2 10 8000 4000 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=1.1℃/W single pulse 10 150 TC, Case Temperature [℃] 4 MagnaChip Semiconductor Ltd. 2 10000 10 µs 1 single Pulse RthJC = 3.5.℃/W TC = 25℃ 100 µs 8000 1 ms 10 ms 10 10 0 DC Power (W) ID, Drain Current [A] 10 Operation in This Area is Limited by R DS(on) 100 ms 1s 4000 -1 2000 Single Pulse TJ=Max rated TC=25℃ 10 6000 0 1E-5 -2 10 -1 10 0 10 1 10 2 1E-4 1E-3 0.01 0.1 1 10 Pulse Width (s) VDS, Drain-Source Voltage [V] Fig.14 Single Pulse Maximum Power Dissipation – MDF7N50B (TO-220F) Fig.13 Maximum Safe Operating Area MDF7N50B (TO-220F) 0 Zθ JC(t), Thermal Response 10 D=0.5 0.2 0.1 -1 10 0.05 0.02 0.01 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=3.5℃/W single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] Fig.15 Transient Thermal Response Curve MDF7N50B (TO-220F) Jan 2012. Version 1.0 5 MagnaChip Semiconductor Ltd. MDP7N50B / MDF7N50B N-channel MOSFET 500V 10 MDP7N50B / MDF7N50B N-channel MOSFET 500V Physical Dimensions 3 Leads, TO-220 Dimensions are in millimeters unless otherwise specified Jan 2012. Version 1.0 6 MagnaChip Semiconductor Ltd. MDP7N50B / MDF7N50B N-channel MOSFET 500V Physical Dimension 3 Leads, TO-220F Dimensions are in millimeters unless otherwise specified Symbol A b b1 C D E e F G L L1 Q Q1 ￠R Jan 2012. Version 1.0 Min 4.50 0.63 1.15 0.33 15.47 9.60 Nom Max 4.93 0.91 1.47 0.63 16.13 10.71 2.54 2.34 6.48 12.24 2.79 2.52 3.10 3.00 2.84 6.90 13.72 3.67 2.96 3.50 3.55 7 MagnaChip Semiconductor Ltd. U.S.A Sunnyvale Office 787 N. 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