MOSFET SMD Type N-Channel MOSFET AO4266 (KO4266) SOP-8 ■ Features ● VDS (V) = 60V ● ID = 10 A (VGS = 10V) ● RDS(ON) ＜ 15mΩ (VGS = 10V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 19mΩ (VGS = 4.5V) 1 2 3 4 Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 VSPIKE 72 VDS Spike @ 10us Continuous Drain Current TA=25℃ TA=70℃ ID 8 IDM 40 Avalanche Current IAS 20 Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State EAS PD RthJA RthJL V 10 Pulsed Drain Current Avalanche Energy Unit 20 3.1 2 A mJ W 40 75 ℃/W 24 TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO4266 (KO4266) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage VGS(th) Test Conditions ID=250 uA, VGS=0V Min Typ 60 1 VDS=60V, VGS=0V, TJ=55℃ 5 VDS=0V, VGS=±20V VDS=VGS , ID=250uA RDS(On) VGS=10V, ID=10A 1.5 gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Qgs Gate Drain Charge Qgd VDS=5V, ID=10A VGS=0V, VDS=30V, f=1MHz VGS=10V, VDS=30V, ID=10A 0.7 2.3 21 30 9 15 4.7 Turn-Off DelayTime td(off) VGS=10V, VDS=30V, RL=3Ω, RGEN=3Ω tf 2.5 Body Diode Reverse Recovery Time trr 15.5 Body Diode Reverse Recovery Charge Qrr IF= 10A, dI/dt= 500A/us 55.5 IS IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. 2 www.kexin.com.cn nC ns 22 Turn-Off Fall Time KC**** Ω 2.6 6 4266 pF 10 VGS=0V, VDS=0V, f=1MHz 2.5 Marking mΩ S 123 tr ■ Marking V 35 td(on) VSD 2.5 1340 Turn-On DelayTime Diode Forward Voltage nA 19 Turn-On Rise Time Maximum Body-Diode Continuous Current ±100 25 TJ=125℃ Qg Gate Source Charge uA 15 VGS=4.5V, ID=9A Forward Transconductance Unit V VDS=60V, VGS=0V VGS=10V, ID=10A Static Drain-Source On-Resistance Max nC 4 A 1 V MOSFET SMD Type N-Channel MOSFET AO4266 (KO4266) ■ Typical Characterisitics www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO4266 (KO4266) ■ Typical Characterisitics . 4 www.kexin.com.cn