FCH041N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 77 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series. • Typ. RDS(on) = 36 mΩ • Ultra Low Gate Charge (Typ. Qg = 285 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 735 pF) • 100% Avalanche Tested • An Integrated Gate Resistor • RoHS Compliant Applications • LCD / LED / PDP TV Lighting • Solar Inverter • AC-DC Power Supply D G G D TO-247 S S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 15 A EAR Repetitive Avalanche Energy (Note 1) 5.92 mJ dv/dt Parameter - DC (f > 1 Hz) - Continuous (TC = 25oC) - Pulsed (Note 1) 231 A (Note 2) 2025 mJ 100 (Note 3) (TC = 25oC) TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds - Derate Above 25oC A 48.7 MOSFET dv/dt Peak Diode Recovery dv/dt V ±30 77 - Continuous (TC = 100oC) Power Dissipation Unit V ±20 - AC PD TL FCH041N60E 600 20 V/ns 592 W 4.74 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. RθJA Thermal Resistance, Junction to Ambient, Max. ©2013 Fairchild Semiconductor Corporation FCH041N60E Rev. C1 FCH041N60E 0.21 40 1 Unit o C/W www.fairchildsemi.com FCH041N60E — N-Channel SuperFET® II Easy-Drive MOSFET December 2013 Part Number FCH041N60E Top Mark FCH041N60E Package TO-247 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 10 mA, VGS = 0 V, TC = 25oC ID = 10 mA, VGS = 0 V, TC = 150oC ID = 10 mA, Referenced to 25oC VDS = 480 V, VGS = 0 V 600 - - 650 - - - 0.67 - - - 1 VDS = 480 V, VGS = 0 V, TC = 125oC - - 10 VGS = ±20 V, VDS = 0 V - - ±100 V V/oC μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.5 - 3.5 V Static Drain to Source On Resistance VGS = 10 V, ID = 39 A - 36 41 mΩ gFS Forward Transconductance VDS = 20 V, ID = 39 A - 71 - S VDS = 100 V, VGS = 0 V, f = 1 MHz - 10300 13700 pF - 355 475 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 4 6 Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 187 - pF Cosseff. Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 735 - pF Qg(tot) Total Gate Charge at 10V 285 380 nC Gate to Source Gate Charge VDS = 380 V, ID = 39 A, VGS = 10 V - Qgs - 45 - nC Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (Note 4) - 105 - nC f = 1 MHz - 1.2 - Ω - 50 110 ns VDD = 380 V, ID = 39 A, VGS = 10 V, RG = 4.7 Ω - 50 110 ns - 320 650 ns - 85 180 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 77 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 231 A VGS = 0 V, ISD = 39 A - - 1.2 V VGS = 0 V, ISD = 39 A, dIF/dt = 100 A/μs - 590 - ns - 18 - μC VSD Drain to Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 15 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 39 A, di/dt ≤ 200 A/μs, VDD ≤ 380V, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2013 Fairchild Semiconductor Corporation FCH041N60E Rev. C1 2 www.fairchildsemi.com FCH041N60E — N-Channel SuperFET® II Easy-Drive MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 300 300 VGS = 15.0V 10.0V 8.0V 6.0V 5.5V 5.0V 4.5V *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 ID, Drain Current[A] 100 ID, Drain Current[A] Figure 2. Transfer Characteristics 10 10 o 150 C o 25 C o 1 -55 C *Notes: 1. 250μs Pulse Test o 1 0.1 2. TC = 25 C 1 VDS, Drain to Source Voltage[V] 10 0.1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 VGS, Gate to Source Voltage[V] 500 IS, Reverse Drain Current [A] 0.05 VGS = 10V 0.04 VGS = 20V 0.03 100 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 0.02 *Note: TC = 25 C 0 50 100 150 ID, Drain Current [A] 1 0.2 200 Figure 5. Capacitance Characteristics 1 0.1 VGS, Gate to Source Voltage [V] Ciss 1000 10 1.8 10 10000 100 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 100000 Capacitances [pF] 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.06 RDS(ON) [Ω], Drain to Source On-Resistance 2 Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 10 100 VDS, Drain to Source Voltage [V] ©2013 Fairchild Semiconductor Corporation FCH041N60E Rev. C1 6 4 2 0 600 3 VDS = 120V VDS = 300V VDS = 480V 8 *Note: ID = 39A 0 50 100 150 200 250 Qg, Total Gate Charge [nC] 300 www.fairchildsemi.com FCH041N60E — N-Channel SuperFET® II Easy-Drive MOSFET Typical Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain to Source On-Resistance BVDSS, [Normalized] Drain to Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 39A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 80 500 10μs ID, Drain Current [A] 100 ID, Drain Current [A] 100μs 1ms 10ms DC 10 Operation in This Area is Limited by RDS(on) 1 *Notes: o 60 40 20 1. TC = 25 C o 0.1 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain to Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 45 40 EOSS, [μJ] 30 20 10 0 0 100 200 300 400 500 VDS, Drain to Source Voltage [V] ©2013 Fairchild Semiconductor Corporation FCH041N60E Rev. C1 600 4 www.fairchildsemi.com FCH041N60E — N-Channel SuperFET® II Easy-Drive MOSFET Typical Characteristics (Continued) FCH041N60E — N-Channel SuperFET® II Easy-Drive MOSFET Typical Characteristics (Continued) Figure 12. Transient Thermal Response Curve 0.5 o ZθJC(t), Thermal Response [ C/W] 0.5 0.1 0.2 PDM 0.1 0.01 t1 0.05 0.02 0.01 o 1. ZθJC(t) = 0.21 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 ©2013 Fairchild Semiconductor Corporation FCH041N60E Rev. C1 t2 *Notes: -4 10 -3 -2 10 10 t1, Rectangular Pulse Duration [sec] 5 -1 10 0 10 www.fairchildsemi.com FCH041N60E — N-Channel SuperFET® II Easy-Drive MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FCH041N60E Rev. C1 6 www.fairchildsemi.com FCH041N60E — N-Channel SuperFET® II Easy-Drive MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FCH041N60E Rev. C1 7 www.fairchildsemi.com FCH041N60E — N-Channel SuperFET® II Easy-Drive MOSFET Mechanical Dimensions Figure 17. TO-247, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003 ©2013 Fairchild Semiconductor Corporation FCH041N60E Rev. C1 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2013 Fairchild Semiconductor Corporation FCH041N60E Rev. 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