Rohm IMX25T110 General purpose transistor (isolated dual transistors) Datasheet

General purpose transistor
(isolated dual transistors)
IMX25
Dimensions (Unit : mm)
1.1 +0.2
−0.1
2.9±0.2
1.9±0.2
0.8±0.1
0.95 0.95
(6)
1.6
Structure
Epitaxial planar type
NPN silicon transistor
(2) (1)
+0.1
0.3 −0.05
(3)
0 to 0.1
+0.1
0.15 −0.06
All terminals have same dimensions
The following characteristics apply to both Tr1 and Tr2.
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol: X25
Absolute maximum ratings (Ta=25C)
Parameter
2.8±0.2
(5)
+0.2
−0.1
(4)
0.3 to 0.6
Features
1) Two 2SD2704K chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting machine.
3) Transistor elements are independent, eliminating interference.
4) Mounting cost and area can be cut in half.
Inner circuit
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
25
V
Collector current
IC
300
mA
Power dissipation
Pd
300(TOTAL)
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
(4)
(5)
(6)
Tr1
Tr2
(3)
∗
(2)
(1)
∗ 200mW per element must not be exceeded.
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Collector-base breakdown voltage
BVCBO
50
−
−
V
IC=10μA
Collector-emitter breakdown voltage
BVCEO
20
−
−
V
IC=1mA
Emitter-base breakdown voltage
Parameter
Unit
Conditions
BVEBO
25
−
−
V
IE=10μA
Collector cutoff current
ICBO
−
−
0.1
μA
VCB=50V
Emitter cutoff current
IEBO
−
−
0.1
μA
VEB=25V
VCE(sat)
−
50
100
mV
IC/IB=30mA/3mA
hFE
820
−
2700
−
VCE=2V, IC=4mA
Collector-emitter saturation voltage
DC current transfer ratio
fT
−
35
−
MHz
Output capacitance
Cob
−
3.9
−
pF
VCB=10V, IE=0A, f=1MHz
Output On-resistance
Ron
−
0.7
−
Ω
IB=5mA, Vi=100mVrms, f=1kHz
Transition frequency
VCE=6V, IE=−4mA, f=10MHz
Packaging specifications
Packaging type
Part No.
Taping
Code
T110
Basic ordering unit (pieces)
3000
IMX25
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c 2010 ROHM Co., Ltd. All rights reserved.
○
1/3
2010.02 - Rev.B
IMX25
Data Sheet
Electrical characteristic curves
25°C
−40°C
0.1
0.2
0.4
0.6
0.8
1
Ta=125°C
100
25°C
0.1
1000
Ta=25°C
Ta= −40°C
100
10
1
10
100
1000
)
IC/IB=50/1
1000
Ta=125°C
100
Ta=25°C
10
1
Ta= −40°C
1
10
100
0.8
1
Ta= −40°C
100
10
1.2
1
IC/IB=10/1
1000
Ta=125°C
100
Ta=25°C
10
Ta= −40°C
1
1
10
100
1000
1000
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage
vs. collector current ( )




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c 2010 ROHM Co., Ltd. All rights reserved.
○
IC/IB=10/1
Ta= −40°C
1000
Ta=125°C
100
1
Ta=25°C
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.8 Base-emitter saturation voltage
vs. collector current ( )

2/3
100
1000
Fig.3 DC current gain
vs. collector current ( )
10000
IC/IB=20/1
1000
Ta=125°C
100
Ta=25°C
10
Ta= −40°C
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation voltage
vs. collector current ( )
10000
10
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
BASE SATURATION VOLTAGE : VBE(sat) (mV)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
10000
0.6
10000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain
vs. collector current (
0.4
Ta=25°C
Fig.2 Grounded emitter propagation
characteristics ( ΙΙ )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
DC CURRENT GAIN : hFE
Ta=125°C
0.2
1000
BASE TO EMITTER VOLTAGE : VBE(ON) (V)
Fig.1 Grounded emitter propagation
characteristics ( Ι )
VCE=6V
−40°C
10
BASE TO EMITTER VOLTAGE : VBE(ON) (V)
10000
VCE=2V
Ta=125°C
0.1
0
1.2
10000
Fig.6 Collector-emitter saturation voltage
vs. collector current ( )
BASE SATURATION VOLTAGE : VBE(sat) (mV)
0.1
0
VCE=6V
DC CURRENT GAIN : hFE
Ta=125°C
100
10
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
VCE=2V
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
1000
10000
IC/IB=20/1
Ta= −40°C
1000
Ta=125°C
100
1
10
Ta=25°C
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.9 Base-emitter saturation voltage
vs. collector current ( )

2010.02 - Rev.B
Data Sheet
10000
Ta= −40°C
1000
Ta=125°C
100

IC/IB=50/1
1
Ta=25°C
10
100
1
1000

Ta=25°C
f=50MHz
IE=0A
1
COLLECTOR CURRENT : IC (mA)
10
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
10000
TRANSITION FREQUENCY : fT (MHz)
BASE SATURATION VOLTAGE : VBE(sat) (mV)
IMX25
100
Ta=25°C
f=1MHz
IE=0A

10
1
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER CURRENT : IE (mA)
Fig.10 Base-emitter saturation voltage
vs. collector current ( )
100
Fig.12 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Fig.11 Gain bandwidth product
vs. emitter current



100
Ta= 25°C
ON RESISTANCE : Ron (Ω)
ON RESISTANCE : Ron (Ω)
100
10
1
0.1 See Fig.15
0.01
0.1
1
10
Ta=25°C
10
1
0.1 See Fig.16
0.01
0.1
100
BASE CURRENT : IB (mA)
1
10
100
BASE CURRENT : IB (mA)
Fig.13 Output-on resistance
vs. base current ( )



Ron measurement circuit
Fig.14 Output-on resistance
vs. base current ( )

RL=1kΩ

RL=1kΩ
Input
Vi
100mV(rms)
1V(rms)
f=1kHz
V Output
v0
IB
Ron=
v0
vi−v0
Input
Vi
100mV(rms)
1V(rms)
f=1kHz
V Output
v0
IB
×RL
Fig.15 Ron measurement circuit ( )
Ron=
v0
vi−v0
×RL
Fig.16 Ron measurement circuit ( )
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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c 2010 ROHM Co., Ltd. All rights reserved.
○
3/3
2010.02 - Rev.B
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R1010A
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