ACE5290B 20V Complementary Enhancement Mode Field Effect Transistor Description The ACE5290B combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Features N-channel VDS (V) = 20V ID=3.5A RDS(ON) < 50mΩ (VGS=4.5V) < 80mΩ (VGS=2.5V) P-channel VDS (V) = -20V ID = -2.5A RDS(ON) < 85mΩ (VGS = -4.5V) < 115mΩ (VGS = -2.5V) Absolute Maximum Ratings Parameter Symbol N-channel P-channel Unit Drain-Source Voltage VDSS 20 -20 V Gate-Source Voltage VGSS ±12 ±12 V 3.5 -2.5 3 -2 13 -13 1.1 1.1 0.7 0.7 -55~150 -55~150 Drain Current (Continuous)*AC TA=25℃ TA=70℃ Drain Current (Pulsed)*B Power Dissipation TA=25℃ TA=70℃ Operating temperature / storage temperature ID IDM PD TJ/TSTG A A W ℃ A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.1 1 ACE5290B 20V Complementary Enhancement Mode Field Effect Transistor Packaging Type SOT23-6 Ordering information ACE5290B XX + H Halogen - free Pb - free GM: SOT23-6 VER 1.1 2 ACE5290B 20V Complementary Enhancement Mode Field Effect Transistor N-channel Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Test Conditions Static Min Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250μA 20 Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V Gate Threshold Voltage VGS(TH) VGS = VDS , IDS= 250μA Gate Leakage Current IGSS VGS= ±12V , VDS=0V RDS(on) VGS = 4.5V , ID= 3.5A VGS = 2.5V , ID= 2.5A Drain-Source On-state Resistance Typ 1 μA 1.0 V ±100 nA 36 46 50 80 mΩ VGS = 1.8V , ID= 2A 85 110 0.6 gFS VDS= 5V , ID= 3A 16 Diode Forward Voltage VSD ISD= 1.7A , VGS= 0V 0.74 Continuous Current Unit V Forward Trans Conductance Maximum Body-Diode Max IS S 1.0 V 1.7 A Switching Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Qg Qgs Qgd VDS=4.5V, ID= 10A, VGS= 4V td( on ) tr td( off ) tf VDD= 10V,ID= 1A, VGS= 4.5V,RGEN= 6Ω 2.4 0.3 0.8 2.1 3.6 23.3 4.5 nC nC nC ns ns ns ns 240.3 40 22 pF pF pF Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance A. Ciss Coss Crss VDS=8V,VGS= 0V, f= 1.0MHz The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.1 3 ACE5290B 20V Complementary Enhancement Mode Field Effect Transistor N-channel Typical Electrical And Thermal Characteristics VER 1.1 4 ACE5290B 20V Complementary Enhancement Mode Field Effect Transistor VER 1.1 5 ACE5290B 20V Complementary Enhancement Mode Field Effect Transistor P-channel Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Test Conditions Static Min Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250μA -20 Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V Gate Threshold Voltage VGS(TH) VGS = VDS , IDS= -250μA Gate Leakage Current IGSS VGS= ±12V , VDS=0V RDS(on) VGS = -4.5V , ID= -2.8A VGS = -2.5V , ID= -2A Drain-Source On-state Resistance Typ -1 μA -1 V ±100 nA 77 92 85 115 mΩ VGS = -1.8V , ID= -2A 118 200 -0.5 gFS VDS= -5V , ID= -2.5A 13 Diode Forward Voltage VSD ISD= -1.6A , VGS= 0V -0.18 Continuous Current Unit V Forward Trans Conductance Maximum Body-Diode Max S -1.0 V -1.6 A 8.6 0.4 1.7 19.4 7.1 141.2 15.6 nC nC nC ns ns ns ns IS Switching Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Qg Qgs Qgd VDS= -6V, ID= -2.8A, VGS= -4.5V td( on ) tr td( off ) tf VDD= -6V, RL= 6Ω, ID= -1A,VGS= -4.5V, RGEN= 6Ω 6.6 0.3 1.3 9.7 3.6 70.6 7.8 Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance A. Ciss Coss Crss VDS=-6V,VGS= 0V, f= 1.0MHz 589 91.2 67.2 pF pF pF The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.1 6 ACE5290B 20V Complementary Enhancement Mode Field Effect Transistor P-channel Typical Electrical And Thermal Characteristics VER 1.1 7 ACE5290B 20V Complementary Enhancement Mode Field Effect Transistor VER 1.1 8 ACE5290B 20V Complementary Enhancement Mode Field Effect Transistor Packing Information SOT23-6 VER 1.1 9 ACE5290B 20V Complementary Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 10