yangjie MT40CB18T1 Thyristor/diode module Datasheet

MT40CB-T1
RoHS
COMPLIANT
Thyristor/Diode Modules
VRRM / VDRM
IFAV / ITAV
800 to 1800V
40A
Applications




Circuit
Features


1
2
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
3



5
4

International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
UL recognized applied for file no. E360040
Module Type
TYPE
VRRM/VDRM
VRSM
MT40CB08T1
MT40CB12T1
MT40CB16T1
MT40CB18T1
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
◆Diode
Maximum Ratings
Symbol
Item
Conditions
ID
Output Current(D.C.)
Tc=85℃
IFSM
Surge forward current
t=10mS Tvj =45℃
2
it
Visol
Tvj
Tstg
Mt
40
A
1000
A
5000
As
3000
V
Operating Junction Temperature
-40 to +125
℃
Storage Temperature
-40 to +125
℃
To terminals(M5)
3±15%
Nm
To heatsink(M6)
5±15%
Nm
100
g
Isolation Breakdown Voltage(R.M.S)
Mounting Torque
a.c.50HZ;r.m.s.;1min
Module(Approximately)
Thermal Characteristics
Symbol
Item
Thermal
Impedance,
max.
Rth(j-c)
Rth(c-s)
Units
Circuit Fusing Consideration
Ms
Weight
Values
Thermal Impedance, max.
Conditions
2
Values
Units
Junction to Case
0.33
℃/W
Case to Heatsink
0.10
℃/W
Electrical Characteristics
Symbol
Item
VFM
Forward Voltage Drop, max.
IRRM
Repetitive Peak Reverse Current,
max.
S-M046
Rev.2.0, 27-May-17
Conditions
T=25℃ IF =200A
Tvj =25℃ VRD=VRRM
Tvj =125℃ VRD=VRRM
Values
Min.
Typ.
Max.
1.95
≤0.5
≤6
Units
V
mA
mA
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MT40CB-T1
◆Thyristor
Maximum Ratings
Symbol
Item
Conditions
RoHS
COMPLIANT
Values
Units
40
A
o
ITAV
Average On-State Current
Sine 180 ;Tc=85℃
ITSM
Surge On-State Current
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
1000
850
A
Circuit Fusing Consideration
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
5000
3600
As
Isolation Breakdown Voltage(R.M.S)
a.c.50HZ;r.m.s.;1min
2
it
Visol
Tvj
Tstg
Mt
2
3000
V
Operating Junction Temperature
-40 to +125
℃
Storage Temperature
-40 to +125
℃
To terminals(M5)
3±15%
Nm
To heatsink(M6)
5±15%
Nm
Mounting Torque
Ms
di/dt
Critical Rate of Rise of On-State
Current
TVJ= TVJM , 2/3VDRM ,IG =500mA
Tr<0.5us,tp>6us
150
A/us
dv/dt
Critical Rate of Rise of Off-State
Voltage, min.
TJ=TVJM ,2/3VDRM linear voltage rise
1000
V/us
a
Maximum allowable acceleration
50
m/s
Values
Units
Junction to Case
0.65
℃/W
Case to Heatsink
0.20
℃/W
Thermal Characteristics
Symbol
Item
Thermal Impedance, max.
Rth(j-c)
Rth(c-s)
Thermal Impedance, max.
Conditions
2
Electrical Characteristics
Symbol
Item
VTM
Peak On-State Voltage, max.
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
Conditions
Values
Min. Typ. Max.
Units
1.95
V
TVJ=TVJM ,VR=VRRM ,VD=
VDRM
15
mA
On state threshold voltage
For power-loss
calculations only
(TVJ =125℃)
1.0
V
Value of on-state
slope resistance. max
TVJ =TVJM
4.5
mΩ
VGT
Gate Trigger Voltage, max.
TVJ =25℃ , VD =6V
2.5
V
IRRM/IDRM
VTO
rT
T=25℃ IT =200A
IGT
Gate Trigger Current, max.
TVJ =25℃ , VD =6V
150
mA
VGD
Non-triggering gate voltage, max.
TVJ=125℃,VD =2/3VDRM
0.25
V
IGD
Non-triggering gate current, max.
TVJ =125℃, VD =2/3VDRM
6
mA
IL
Latching current, max.
TVJ =25℃ , RG = 33 Ω
300
600
mA
IH
Holding current, max.
TVJ =25℃ , VD =6V
150
250
mA
tgd
Gate controlled delay time
TVJ=25℃,
IG=1A, diG/dt=1A/us
1
us
tq
Circuit commutated turn-off time
TVJ =TVJM
80
us
S-M046
Rev.2.0, 27-May-17
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MT40CB-T1
RoHS
COMPLIANT
Performance Curves
60
100
DC
A
W
75
rec.120
sin.180
48
DC
sin.180
rec.60
36
rec.120
rec.30
50
rec.60
24
rec.30
25
12
PTAV
ITAVM
0
0
ITAV 10
20
30
40
50
0
A 60
0
Fig1. Power dissipation
Tc
50
℃ 130
100
Fig2.Forward Current Derating Curve
1000
1.0
50HZ
℃/ W
A
Zth(j-S)
Zth(j-C)
0.5
500
0
0
0.001
t 0.01
0.1
1
10
S 100
Fig3. Transient thermal impedance
100
ms 1000
Fig4. Max Non-Repetitive Forward Surge
Current
250
A
10
Typ.
200
150
100
max.
25
25℃
- - -125℃
IT
0
0
VTM
0.5
1.0
1.5
2.0
V
2.5
Fig5. Forward Characteristics
S-M046
Rev.2.0, 27-May-17
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MT40CB-T1
RoHS
COMPLIANT
100
V
1/2·MT40CB18T1
20V;20Ω
15
0W
(0
10
10
(0
50
.5
W
(8
.1
m
s)
0W
m
m
s)
s)
VGT
∧
1
PG(tp)
-40℃
Tvj 25℃
125℃
VG
VGD125℃
IGT
IGD125℃
0.1
0.001
IG
0.01
0.1
1
10
A 100
Fig6. Gate trigger Characteristics
Package Outline Information
CASE: T1
YJ
Dimensions in mm
S-M046
Rev.2.0, 27-May-17
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