TI OPA2333AIDGKT 1.8v, micropower cmos operational amplifiers zero-drift sery Datasheet

 OPA333
OPA2333
SBOS351C – MARCH 2006 – REVISED MAY 2007
1.8V, microPOWER
CMOS OPERATIONAL AMPLIFIERS
Zerø-Drift Series
FEATURES
•
•
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DESCRIPTION
LOW OFFSET VOLTAGE: 10μV (max)
ZERO DRIFT: 0.05μV/°C (max)
0.01Hz to 10Hz NOISE: 1.1μVPP
QUIESCENT CURRENT: 17μA
SINGLE-SUPPLY OPERATION
SUPPLY VOLTAGE: 1.8V to 5.5V
RAIL-TO-RAIL INPUT/OUTPUT
microSIZE PACKAGES: SC70 and SOT23
APPLICATIONS
•
•
•
•
•
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TRANSDUCER APPLICATIONS
TEMPERATURE MEASUREMENTS
ELECTRONIC SCALES
MEDICAL INSTRUMENTATION
BATTERY-POWERED INSTRUMENTS
HANDHELD TEST EQUIPMENT
The OPA333 series of CMOS operational amplifiers
uses a proprietary auto-calibration technique to
simultaneously provide very low offset voltage (10μV
max) and near-zero drift over time and temperature.
These miniature, high-precision, low quiescent
current amplifiers offer high-impedance inputs that
have a common-mode range 100mV beyond the rails
and rail-to-rail output that swings within 50mV of the
rails. Single or dual supplies as low as +1.8V (±0.9V)
and up to +5.5V (±2.75V) may be used. They are
optimized for low-voltage, single-supply operation.
The OPA333 family offers excellent CMRR without
the
crossover
associated
with
traditional
complementary input stages. This design results in
superior performance for driving analog-to-digital
converters (ADCs) without degradation of differential
linearity.
The OPA333 (single version) is available in the
SC70-5, SOT23-5, and SO-8 packages. The
OPA2333 (dual version) is offered in DFN-8 (3mm ×
3mm), MSOP-8, and SO-8 packages. All versions
are specified for operation from –40°C to +125°C.
OPA333
500nV/div
0.1Hz TO 10Hz NOISE
OUT
1
V-
2
+IN
3
5
V+
4
-IN
OPA333
SOT23-5
1s/div
+IN
1
V-
2
-IN
3
5
V+
4
OUT
SC70-5
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2007, Texas Instruments Incorporated
OPA333
OPA2333
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SBOS351C – MARCH 2006 – REVISED MAY 2007
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
ORDERING INFORMATION (1)
PRODUCT
OPA333
OPA2333
(1)
PACKAGE-LEAD
PACKAGE DESIGNATOR
PACKAGE MARKING
SOT23-5
DBV
OAXQ
SC70-5
DCK
BQY
SO-8
D
O333A
SO-8
D
O2333A
DFN-8
DRB
BQZ
MSOP-8
DGK
OBAQ
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS (1)
OPA333, OPA2333
UNIT
+7
V
–0.3 to (V+) + 0.3
V
±10
mA
Supply Voltage
Signal Input Terminals, Voltage (2)
Signal Input Terminals, Voltage
(2)
Output Short-Circuit (3)
Continuous
Operating Temperature
–40 to +150
°C
Storage Temperature
–65 to +150
°C
Junction Temperature
+150
°C
Human Body Model (HBM)
4000
V
Charged Device Model (CDM)
1000
V
Machine Model (MM)
400
V
ESD Ratings:
(1)
(2)
(3)
2
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not supported.
Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3V beyond the supply rails should
be current limited to 10mA or less.
Short-circuit to ground, one amplifier per package.
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OPA2333
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ELECTRICAL CHARACTERISTICS: VS = +1.8V to +5.5V
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.
At TA = +25°C, RL = 10kΩ connected to VS/2, VCM = VS/2, and VOUT = VS/2, unless otherwise noted.
OPA333, OPA2333
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
2
10
μV
0.02
0.05
μV/°C
1
5
μV/V
OFFSET VOLTAGE
Input Offset Voltage
VOS
vs Temperature
dVOS/dT
vs Power Supply
PSRR
VS = +5V
VS = +1.8V to +5.5V
Long-Term Stability (1)
See
Channel Separation, dc
(1)
μV/V
0.1
INPUT BIAS CURRENT
Input Bias Current
±70
IB
Input Offset Current
±200
±150
over Temperature
±140
IOS
pA
pA
±400
pA
NOISE
μVPP
Input Voltage Noise, f = 0.01Hz to 1Hz
0.3
Input Voltage Noise, f = 0.1Hz to 10Hz
1.1
μVPP
100
fA/√Hz
Input Current Noise, f = 10Hz
in
INPUT VOLTAGE RANGE
Common-Mode Voltage Range
Common-Mode Rejection Ratio
VCM
CMRR
(V–) – 0.1
(V–) – 0.1V < VCM < (V+) + 0.1V
106
(V+) + 0.1
V
130
dB
Differential
2
pF
Common-Mode
4
pF
130
dB
INPUT CAPACITANCE
OPEN-LOOP GAIN
Open-Loop Voltage Gain
AOL
(V–) + 100mV < VO < (V+) – 100mV, RL =
10kΩ
106
FREQUENCY RESPONSE
Gain-Bandwidth Product
Slew Rate
GBW
SR
CL = 100pF
350
kHz
G = +1
0.16
V/μs
RL = 10kΩ
30
OUTPUT
Voltage Output Swing from Rail
over Temperature
RL = 10kΩ
50
mV
70
mV
Short-Circuit Current
ISC
±5
Capacitive Load Drive
CL
See Typical Characteristics
Open-Loop Output Impedance
f = 350kHz, IO = 0
mA
2
kΩ
POWER SUPPLY
Specified Voltage Range
Quiescent Current Per Amplifier
VS
IQ
1.8
IO = 0
17
VS = +5V
100
over Temperature
Turn-On Time
5.5
V
25
μA
28
μA
μs
TEMPERATURE RANGE
Specified Range
–40
+125
°C
Operating Range
–40
+150
°C
Storage Range
–65
+150
Thermal Resistance
(1)
°C
°C/W
θJA
SOT23-5
200
°C/W
MSOP-8, SO-8
150
°C/W
DFN-8
50
°C/W
SC70-5
250
°C/W
300-hour life test at +150°C demonstrated randomly distributed variation of approximately 1μV.
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OPA2333
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SBOS351C – MARCH 2006 – REVISED MAY 2007
PIN CONFIGURATIONS
OPA333
OUT
1
V-
2
+IN
3
OPA333
OPA333
SOT23-5
SO-8
SC70-5
Top View
Top View
Top View
5
4
V+
-IN
(1)
(1)
1
8
NC
-IN
2
7
V+
+IN
3
6
OUT
NC
4
V-
5
NC
DFN-8
Top View
Top View
8
V+
7
OUT B
6
-IN B
5
+IN B
A
-IN A
2
+IN A
3
V-
4
B
OUT A
1
-IN A
2
+IN A
3
V-
4
1. NC denotes no internal connection.
2. Connect thermal die pad to V–.
4
V-
2
-IN
3
8
V+
7
OUT B
6
-IN B
5
+IN B
OPA2333
SO-8, MSOP-8
1
1
(1)
OPA2333
OUT A
+IN
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Exposed
Thermal
Die Pad
on
(2)
Underside
5
V+
4
OUT
OPA333
OPA2333
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SBOS351C – MARCH 2006 – REVISED MAY 2007
TYPICAL CHARACTERISTICS
At TA = +25°C, VS = +5V, and CL = 0pF, unless otherwise noted.
OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTION
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
0
0.0025
0.0050
0.0075
0.0100
0.0125
0.0150
0.0175
0.0200
0.0225
0.0250
0.0275
0.0300
0.0325
0.0350
0.0375
0.0400
0.0425
0.0450
0.0475
0.0500
Population
Population
OFFSET VOLTAGE PRODUCTION DISTRIBUTION
Offset Voltage (mV)
Offset Voltage Drift (mV/°C)
Figure 1.
Figure 2.
OPEN-LOOP GAIN vs FREQUENCY
100
200
120
150
100
Phase
60
100
40
50
Gain
20
0
-20
10
100
1k
10k
100k
CMRR (dB)
140
Phase (°)
250
80
80
60
0
40
-50
20
-100
0
1M
10
1
100
Frequency (Hz)
1k
10k
100k
Figure 4.
POWER-SUPPLY REJECTION RATIO vs FREQUENCY
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
120
3
VS = ±2.75V
VS = ±0.9V
+PSRR
100
2
Output Swing (V)
-PSRR
80
1M
Frequency (Hz)
Figure 3.
PSRR (dB)
AOL (dB)
COMMON-MODE REJECTION RATIO vs FREQUENCY
120
60
40
-40°C
1
+25°C
+125°C
0
+25°C
-40°C
-1
+125°C
+25°C
20
-2
0
-3
-40°C
1
10
100
1k
10k
100k
1M
0
1
2
3
4
5
6
Frequency (Hz)
Output Current (mA)
Figure 5.
Figure 6.
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8
9
10
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OPA2333
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SBOS351C – MARCH 2006 – REVISED MAY 2007
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = +5V, and CL = 0pF, unless otherwise noted.
INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE
INPUT BIAS CURRENT vs TEMPERATURE
100
200
80
VS = 5.5V
VS = 1.8V
150
-IB
60
-IB
100
40
IB (pA)
IB (pA)
-IB
50
20
0
0
-20
+IB
-50
-40
-100
-60
+IB
+IB
-150
-80
-200
-100
1
0
2
3
4
5
0
-25
-50
Common-Mode Voltage (V)
50
75
Figure 7.
Figure 8.
QUIESCENT CURRENT vs TEMPERATURE
LARGE-SCALE STEP RESPONSE
25
100
G=1
RL = 10kW
Output Voltage (1V/div)
20
VS = 5.5V
IQ (mA)
25
Temperature (°C)
15
VS = 1.8V
10
5
0
-50
-25
0
25
50
75
100
Time (50ms/div)
125
Temperature (°C)
Figure 10.
SMALL-SCALE STEP RESPONSE
POSITIVE OVER-VOLTAGE RECOVERY
2V/div
Figure 9.
Output Voltage (50mV/div)
G = +1
RL = 10kW
0
Input
Output
10kW
+2.5V
1V/div
1kW
0
OPA333
-2.5V
Time (5ms/div)
Time (50ms/div)
Figure 11.
6
Figure 12.
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OPA2333
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SBOS351C – MARCH 2006 – REVISED MAY 2007
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = +5V, and CL = 0pF, unless otherwise noted.
NEGATIVE OVER-VOLTAGE RECOVERY
SETTLING TIME vs CLOSED-LOOP GAIN
600
4V Step
500
Settling Time (ms)
1V/div
2V/div
Input
0
0
10kW
+2.5V
1kW
400
300
200
0.001%
Output
OPA333
100
0.01%
-2.5V
0
Time (50ms/div)
10
1
100
Gain (dB)
Figure 13.
Figure 14.
SMALL-SIGNAL OVERSHOOT vs LOAD CAPACITANCE
0.1Hz TO 10Hz NOISE
40
35
500nV/div
25
20
15
10
5
0
100
1000
1s/div
Load Capacitance (pF)
Figure 15.
Figure 16.
CURRENT AND VOLTAGE NOISE SPECTRAL DENSITY vs
FREQUENCY
1000
1000
Continues with no 1/f (flicker) noise.
Current Noise
100
100
Voltage Noise
10
Current Noise (fA/ÖHz)
10
Voltage Noise (nV/ÖHz)
Overshoot (%)
30
10
1
10
100
1k
10k
Frequency (Hz)
Figure 17.
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OPA2333
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SBOS351C – MARCH 2006 – REVISED MAY 2007
APPLICATIONS INFORMATION
The OPA333 and OPA2333 are unity-gain stable and
free from unexpected output phase reversal. They
use a proprietary auto-calibration technique to
provide low offset voltage and very low drift over time
and temperature. For lowest offset voltage and
precision performance, circuit layout and mechanical
conditions should be optimized. Avoid temperature
gradients that create thermoelectric (Seebeck)
effects in the thermocouple junctions formed from
connecting
dissimilar
conductors.
These
thermally-generated potentials can be made to
cancel by assuring they are equal on both input
terminals. Other layout and design considerations
include:
• Use low thermoelectric-coefficient conditions
(avoid dissimilar metals).
• Thermally isolate components from power
supplies or other heat sources.
• Shield op amp and input circuitry from air
currents, such as cooling fans.
Following these guidelines will reduce the likelihood
of junctions being at different temperatures, which
can cause thermoelectric voltages of 0.1μV/°C or
higher, depending on materials used.
OPERATING VOLTAGE
The OPA333 and OPA2333 input common-mode
voltage range extends 0.1V beyond the supply rails.
The OPA333 is designed to cover the full range
without the troublesome transition region found in
some other rail-to-rail amplifiers.
Normally, input bias current is about 70pA; however,
input voltages exceeding the power supplies can
cause excessive current to flow into or out of the
input pins. Momentary voltages greater than the
power supply can be tolerated if the input current is
limited to 10mA. This limitation is easily
accomplished with an input resistor, as shown in
Figure 18.
Current-limiting resistor
required if input voltage
exceeds supply rails by
³ 0.5V.
IOVERLOAD
10mA max
+5V
OPA333
VOUT
VIN
5kW
Figure 18. Input Current Protection
The OPA333 and OPA2333 op amps operate over a
power-supply range of +1.8V to +5.5V (±0.9V to
±2.75V). Supply voltages higher than +7V (absolute
maximum) can permanently damage the device.
Parameters that vary over supply voltage or
temperature are shown in the Typical Characteristics
section of this data sheet.
8
INPUT VOLTAGE
INTERNAL OFFSET CORRECTION
The OPA333 and OPA2333 op amps use an
auto-calibration technique with a time-continuous
350kHz op amp in the signal path. This amplifier is
zero-corrected every 8μs using a proprietary
technique. Upon power-up, the amplifier requires
approximately 100μs to achieve specified VOS
accuracy. This design has no aliasing or flicker
noise.
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OPA2333
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ACHIEVING OUTPUT SWING TO THE OP
AMP NEGATIVE RAIL
works with some types of output stages. The
OPA333 and OPA2333 have been characterized to
perform with this technique; the recommended
resistor value is approximately 20kΩ. Note that this
configuration will increase the current consumption
by several hundreds of microamps. Accuracy is
excellent down to 0V and as low as –2mV. Limiting
and nonlinearity occurs below –2mV, but excellent
accuracy returns as the output is again driven above
–2mV. Lowering the resistance of the pull-down
resistor will allow the op amp to swing even further
below the negative rail. Resistances as low as 10kΩ
can be used to achieve excellent accuracy down to
–10mV.
Some applications require output voltage swings
from 0V to a positive full-scale voltage (such as
+2.5V) with excellent accuracy. With most
single-supply op amps, problems arise when the
output signal approaches 0V, near the lower output
swing limit of a single-supply op amp. A good
single-supply op amp may swing close to
single-supply ground, but will not reach ground. The
output of the OPA333 and OPA2333 can be made to
swing to ground, or slightly below, on a single-supply
power source. To do so requires the use of another
resistor and an additional, more negative, power
supply than the op amp negative supply. A pull-down
resistor may be connected between the output and
the additional negative supply to pull the output down
below the value that the output would otherwise
achieve, as shown in Figure 19.
GENERAL LAYOUT GUIDELINES
Attention to good layout practices is always
recommended. Keep traces short and, when
possible, use a printed circuit board (PCB) ground
plane with surface-mount components placed as
close to the device pins as possible. Place a 0.1μF
capacitor closely across the supply pins. These
guidelines should be applied throughout the analog
circuit to improve performance and provide benefits
such
as
reducing
the
EMI
(electromagnetic-interference) susceptibility.
V+ = +5V
VOUT
OPA333
VIN
RP = 20kW
Operational amplifiers vary in their susceptibility to
radio frequency interference (RFI). RFI can generally
be identified as a variation in offset voltage or dc
signal levels with changes in the interfering RF
signal. The OPA333 has been specifically designed
to minimize susceptibility to RFI and demonstrates
remarkably low sensitivity compared to previous
generation devices. Strong RF fields may still cause
varying offset levels.
Op Amp V- = GND
-5V
Additional
Negative
Supply
Figure 19. For VOUT Range to Ground
The OPA333 and OPA2333 have an output stage
that allows the output voltage to be pulled to its
negative supply rail, or slightly below, using the
technique previously described. This technique only
4.096V
REF3140
+5V
+
R9
150kW
0.1mF
R1
6.04kW
D1
R5
31.6kW
+5V
0.1mF
+
R2
2.94kW
-
R2
549W
-
+ +
K-Type
Thermocouple
40.7mV/°C
OPA333
R6
200W
R4
6.04kW
R3
60.4W
VO
Zero Adj.
Figure 20. Temperature Measurement
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OPA2333
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Figure 21 shows the basic configuration for a bridge
amplifier.
VEX
A low-side current shunt monitor is shown in
Figure 22. RN are operational resistors used to
isolate the ADS1100 from the noise of the digital I2C
bus. Since the ADS1100 is a 16-bit converter, a
precise reference is essential for maximum accuracy.
If absolute accuracy is not required, and the 5V
power supply is sufficiently stable, the REF3130 may
be omitted.
R1
+5V
R R
R R
VOUT
OPA333
R1
VREF
Figure 21. Single Op Amp Bridge Amplifier
3V
+5V
REF3130
Load
R1
4.99kW
R2
49.9kW
R6
71.5kW
V
ILOAD
RSHUNT
1W
RN
56W
OPA333
R3
4.99kW
R4
48.7kW
ADS1100
R7
1.18kW
Stray Ground-Loop Resistance
RN
56W
2
IC
(PGA Gain = 4)
FS = 3.0V
NOTE: 1% resistors provide adequate common-mode rejection at small ground-loop errors.
Figure 22. Low-Side Current Monitor
RG
zener
RSHUNT
(1)
V+
(2)
R1
10kW
MOSFET rated to
stand-off supply voltage
such as BSS84 for
up to 50V.
OPA333
+5V
V+
Two zener
biasing methods
(3)
are shown.
Output
Load
RBIAS
RL
NOTES: (1) zener rated for op amp supply capability (that is, 5.1V for OPA333).
(2) Current-limiting resistor.
(3) Choose zener biasing resistor or dual NMOSFETs (FDG6301N, NTJD4001N, or Si1034)
Figure 23. High-Side Current Monitor
10
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V1
-In
INA152
OPA333
2
1MW
3V
NTC
Thermistor
1MW
5
R2
100kW
60kW
6
R1
VO
R2
OPA333
1
3
OPA333
V2
+In
VO = (1 + 2R2/R1) (V2 - V1)
Figure 24. Thermistor Measurement
Figure 25. Precision Instrumentation Amplifier
+VS
R1
100kW
fLPF = 150Hz
C4
1.06nF
1/2
OPA2333
RA
+VS
R2
100kW
R6
100kW
1/2
OPA2333
+VS
3
2
7
INA321
LL
(1)
GINA = 5
6
5
R8
100kW
dc
R3
100kW
ac
1/2
OPA2333
+VS
C3
1m F
VOUT
OPA333
R13
318kW
GOPA = 200
+VS
1/2
OPA2333
Wilson
LA
R12
5kW
1
4
+VS
R14
1MW
GTOT = 1kV/V
R7
100kW
VCENTRAL
C1
47pF
(RA + LA + LL)/3
fHPF = 0.5Hz
(provides ac signal coupling)
1/2 VS
R5
390kW
+VS
R9
20kW
+VS
R4
100kW
1/2
OPA2333
RL
Inverted
VCM
VS = +2.7V to +5.5V
1/2
OPA2333
BW = 0.5Hz to 150Hz
+VS
R10
1MW
1/2 VS
C2
0.64mF
NOTE: (1) Other instrumentation amplifiers can be used,
such as the INA326, which has lower noise,
but higher quiescent current.
R11
1MW
fO = 0.5Hz
Figure 26. Single-Supply, Very Low Power, ECG Circuit
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DFN PACKAGE
DFN LAYOUT GUIDELINES
The OPA2333 is offered in an DFN-8 package (also
known as SON). The DFN is a QFN package with
lead contacts on only two sides of the bottom of the
package. This leadless package maximizes board
space and enhances thermal and electrical
characteristics through an exposed pad.
The exposed leadframe die pad on the DFN package
should be soldered to a thermal pad on the PCB. A
mechanical drawing showing an example layout is
attached at the end of this data sheet. Refinements
to this layout may be necessary based on assembly
process requirements. Mechanical drawings located
at the end of this data sheet list the physical
dimensions for the package and pad. The five holes
in the landing pattern are optional, and are intended
for use with thermal vias that connect the leadframe
die pad to the heatsink area on the PCB.
DFN packages are physically small, have a smaller
routing area, improved thermal performance, and
improved electrical parasitics. Additionally, the
absence of external leads eliminates bent-lead
issues.
The DFN package can be easily mounted using
standard printed circuit board (PCB) assembly
techniques. See Application Note QFN/SON PCB
Attachment (SLUA271) and Application Report Quad
Flatpack No-Lead Logic Packages (SCBA017), both
available for download at www.ti.com.
Soldering the exposed pad significantly improves
board-level reliability during temperature cycling, key
push, package shear, and similar board-level tests.
Even with applications that have low-power
dissipation, the exposed pad must be soldered to the
PCB to provide structural integrity and long-term
reliability.
The exposed leadframe die pad on the bottom of
the package should be connected to V– or left
unconnected.
12
Submit Documentation Feedback
PACKAGE OPTION ADDENDUM
www.ti.com
9-Jul-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
OPA2333AID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
O2333A
OPA2333AIDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
O2333A
OPA2333AIDGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS CU NIPDAUAG
& no Sb/Br)
Level-1-260C-UNLIM
-40 to 125
OBAQ
OPA2333AIDGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS CU NIPDAUAG
& no Sb/Br)
Level-1-260C-UNLIM
-40 to 125
OBAQ
OPA2333AIDGKT
ACTIVE
VSSOP
DGK
8
250
Green (RoHS CU NIPDAUAG
& no Sb/Br)
Level-1-260C-UNLIM
-40 to 125
OBAQ
OPA2333AIDGKTG4
ACTIVE
VSSOP
DGK
8
250
Green (RoHS CU NIPDAUAG
& no Sb/Br)
Level-1-260C-UNLIM
-40 to 125
OBAQ
OPA2333AIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
O2333A
OPA2333AIDRBR
ACTIVE
SON
DRB
8
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BQZ
OPA2333AIDRBRG4
ACTIVE
SON
DRB
8
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BQZ
OPA2333AIDRBT
ACTIVE
SON
DRB
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BQZ
OPA2333AIDRBTG4
ACTIVE
SON
DRB
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BQZ
OPA2333AIDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
O2333A
OPA333AID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
0 to 0
O333A
OPA333AIDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
OAXQ
OPA333AIDBVRG4
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
OAXQ
OPA333AIDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
OAXQ
OPA333AIDBVTG4
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
OAXQ
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
9-Jul-2013
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
OPA333AIDCKR
ACTIVE
SC70
DCK
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
BQY
OPA333AIDCKRG4
ACTIVE
SC70
DCK
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
BQY
OPA333AIDCKT
ACTIVE
SC70
DCK
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
BQY
OPA333AIDCKTG4
ACTIVE
SC70
DCK
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
BQY
OPA333AIDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
O333A
OPA333AIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
O333A
OPA333AIDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
O333A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
9-Jul-2013
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF OPA2333, OPA333 :
• Automotive: OPA2333-Q1, OPA333-Q1
NOTE: Qualified Version Definitions:
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Jul-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
OPA2333AIDGKT
VSSOP
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
DGK
8
250
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
OPA2333AIDR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
OPA2333AIDRBR
SON
DRB
8
3000
330.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
OPA2333AIDRBT
SON
DRB
8
250
180.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
OPA333AIDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
OPA333AIDCKR
SC70
DCK
5
3000
179.0
8.4
2.2
2.5
1.2
4.0
8.0
Q3
OPA333AIDR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Jul-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
OPA2333AIDGKT
VSSOP
DGK
OPA2333AIDR
SOIC
D
8
250
364.0
364.0
27.0
8
2500
367.0
367.0
35.0
OPA2333AIDRBR
SON
OPA2333AIDRBT
SON
DRB
8
3000
367.0
367.0
35.0
DRB
8
250
210.0
185.0
OPA333AIDBVR
35.0
SOT-23
DBV
5
3000
180.0
180.0
18.0
OPA333AIDCKR
SC70
DCK
5
3000
203.0
203.0
35.0
OPA333AIDR
SOIC
D
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
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