Siemens HYB3165805ATL-60 8m x 8-bit dynamic ram Datasheet

8M x 8-Bit Dynamic RAM
HYB 3164805AJ/AT(L) -40/-50/-60
HYB 3165805AJ/AT(L) -40/-50/-60
(4k & 8k Refresh, EDO-Version)
Advanced Information
•
8 388 608 words by 8-bit organization
•
0 to 70 °C operating temperature
•
Hyper Page Mode - EDO - operation
•
Performance:
-40
-50
-60
tRAC
RAS access time
40
50
60
ns
tCAC
CAS access time
10
13
15
ns
tAA
Access time from address
20
25
30
ns
tRC
Read/write cycle time
69
84
104
ns
tHPC
Hyper page mode (EDO)
cycle time
16
20
25
ns
•
Single + 3.3 V (± 0.3V) power supply
•
Low power dissipation:
max. 450 active mW ( HYB 3164805AJ/AT(L)-40)
max. 360 active mW ( HYB 3164805AJ/AT(L)-50)
max. 324 active mW ( HYB 3164805AJ/AT(L)-60)
max. 612 active mW ( HYB 3165805AJ/AT(L)-40)
max. 468 active mW ( HYB 3165805AJ/AT(L)-50)
max. 432 active mW ( HYB 3165805AJ/AT(L)-60)
7.2 mW standby (LVTTL)
3.24 mW standby (LVMOS)
720 µA standby for L-version
•
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh
Self refresh (L-version only)
8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164805AJ/AT)
4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165805AJ/AT)
• 256 msec refresh period for L-versions
• Plastic Package: P-SOJ-32-1
400 mil
HYB 3164(5)805AJ
P-TSOPII-32-1 400 mil
HYB 3164(5)805AT(L)
•
•
Semiconductor Group
1
6.97
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
This HYB3164(5)805A is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is
fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process
technology. The circuit and process design allow this device to achieve high performance and low
power dissipation. The HYB3164(5)805A operates with a single 3.3 +/-0.3V power supply and
interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB
3164(5)805A to be packaged in a 400mil wide SOJ-32 or TSOP-32 plastic package. These
packages provide high system bit densities and are compatible with commonly used automatic
testing and insertion equipment.The HYB3164(5)805ATL parts have a very low power „sleep mode“
supported by Self Refresh.
Ordering Information
Type
Ordering
Code
Package
Descriptions
8k-refresh versions:
HYB 3164805AJ-40
P-SOJ-32-1
400 mil DRAM (access time 40 ns)
HYB 3164805AJ-50
P-SOJ-32-1
400 mil DRAM (access time 50 ns)
HYB 3164805AJ-60
P-SOJ-32-1
400 mil DRAM (access time 60 ns)
HYB 3164805AT-40
P-TSOPII-32-1
400 mil DRAM (access time 40 ns)
HYB 3164805AT-50
P-TSOPII-32-1
400 mil DRAM (access time 50 ns)
HYB 3164805AT-60
P-TSOPII-32-1
400 mil DRAM (access time 60 ns)
HYB 3164805ATL-50
P-TSOPII-32-1
400 mil DRAM (access time 50 ns)
HYB 3164805ATL-60
P-TSOPII-32-1
400 mil DRAM (access time 60 ns)
HYB 3165805AJ-40
P-SOJ-32-1
400 mil DRAM (access time 40 ns)
HYB 3165805AJ-50
P-SOJ-32-1
400 mil DRAM (access time 50 ns)
HYB 3165805AJ-60
P-SOJ-32-1
400 mil DRAM (access time 60 ns)
HYB 3165805AT-40
P-TSOPII-32-1
400 mil DRAM (access time 40 ns)
HYB 3165805AT-50
P-TSOPII-32-1
400 mil DRAM (access time 50 ns)
HYB 3165805AT-60
P-TSOPII-32-1
400 mil DRAM (access time 60 ns)
HYB 3165805ATL-50
P-TSOPII-32-1
400 mil DRAM (access time 50 ns)
HYB 3165805ATL-60
P-TSOPII-32-1
400 mil DRAM (access time 60 ns)
4k-refresh versions:
Semiconductor Group
2
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
P-SOJ-32-1 (400 mil)
P-TSOPII-32-1 (400 mil)
VCC
I/O1
I/O2
I/O3
I/O4
N.C.
VCC
WE
RAS
.
A0
A1
A2
A3
A4
A5
VCC
O
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VSS
I/O8
I/O7
I/O6
I/O5
VSS
CAS
OE
A12 / N.C. *
A11
A10
A9
A8
A7
A6
VSS
* Pin 24 is A12 for HYB 3164805AJ/AT(L) and N.C. for HYB 3165805AJ/AT(L)
Pin Configuration
Pin Names
A0-A12
Address Inputs for 8k-refresh version HYB 3164805AJ/AT(L)
A0-A11
Address Inputs for 4k-refresh version HYB 3165805AJ/AT(L)
RAS
Row Address Strobe
OE
Output Enable
I/O1-I/O8
Data Input/Output
CAS
Column Address Strobe
WE
Read/Write Input
Vcc
Power Supply ( + 3.3V)
Vss
Ground
Semiconductor Group
3
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
TRUTH TABLE
FUNCTION
RAS
CAS
WE
OE
ROW
ADDR
COL
ADDR
I/O1I/O8
Standby
H
H-X
X
X
X
X
High Impedance
Read
L
L
H
L
ROW
COL
Data Out
Early-Write
L
L
L
X
ROW
COL
Data In
Delayed-Write
L
L
H-L
H
ROW
COL
Data In
Read-Modify-Write
L
L
H-L
L-H
ROW
COL
Data Out, Data In
Hyper Page Mode Read 1st Cycle
L
H-L
H
L
ROW
COL
Data Out
2nd Cycle
L
H-L
H
L
n/a
COL
Data Out
Hyper Page Mode Write 1st Cycle
L
H-L
L
X
ROW
COL
Data In
2nd Cycle
L
H-L
L
X
n/a
COL
Data In
Hyper Page Mode RMW 1st Cycle
L
H-L
H-L
L-H
ROW
COL
Data Out, Data In
2st Cycle
L
H-L
H-L
L-H
n/a
COL
Data Out, Data In
L
H
X
X
ROW
n/a
High Impedance
CAS-before-RAS refresh
H-L
L
H
X
X
n/a
High Impedance
Test Mode Entry
H-L
L
L
X
X
n/a
High Impedance
READ
L-H-L
L
H
L
ROW
COL
Data Out
WRITE
L-H-L
L
L
X
ROW
COL
Data In
H-L
L
H
X
X
X
High Impedance
RAS only refresh
Hidden Refresh
Self Refresh
(L-version only)
Semiconductor Group
4
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
I/O1 I/O2
I/O8
WE
CAS
&
.
Data in
Buffer
10
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
No. 2 Clock
Generator
8
Column
Address
Buffer(10)
10
Data out
Buffer
8
Column
Decoder
Refresh
Controller
Sense Amplifier
I/O Gating
Refresh
Counter (13)
1024
x8
13
Row
13
RAS
Address
Buffers(13)
Row
Decoder 8192
13
No. 1 Clock
Generator
Block Diagram for HYB 3164805AJ/AT(L)
Semiconductor Group
OE
5
Memory Array
8192 x 1024 x 8
8
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
I/O1 I/O2
I/O8
WE
CAS
&
.
Data in
Buffer
11
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
No. 2 Clock
Generator
8
Column
Address
Buffer(11)
11
Data out
Buffer
8
Column
Decoder
Refresh
Controller
Sense Amplifier
I/O Gating
Refresh
Counter (12)
2048
x8
12
Row
12
RAS
Address
Buffers(12)
12
Row
Decoder 4096
No. 1 Clock
Generator
Block Diagram for HYB 3165805AJ/AT(L)
Semiconductor Group
OE
6
Memory Array
4096 x 2048 x 8
8
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
Absolute Maximum Ratings
Operating temperature range..............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation......................................................................................................................1.0 W
Data out current (short circuit)..................................................................................................50 mA
Note
Stresses above those listed under „Absolute Maximum Ratings“ may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may effect device
reliability.
DC Characteristics
TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V
Parameter
Symbol
Limit Values
min.
max.
Unit Note
Input high voltage
VIH
2.0
Vcc+0.3
V
1)
Input low voltage
VIL
– 0.3
0.8
V
1)
Output high voltage (LVTTL)
Output „H“ level voltage (Iout = -2mA)
VOH
2.4
–
V
Output low voltage (LVTTL)
Output „L“level voltage (Iout = +2mA)
VOL
–
0.4
V
Output high voltage (LVCMOS)
Output „H“ level voltage (Iout = -100uA)
VOH
Vcc-0.2 -
V
Ouput low voltage (LVCMOS)
Output „L“ level voltage (Iout = +100uA)
VOL
-
0.2
V
Input leakage current,any input
II(L)
–2
2
µA
IO(L)
–2
2
µA
(0 V < Vin < Vcc , all other pins = 0 V
Output leakage current
(DO is disabled, 0 V < Vout < Vcc )
Semiconductor Group
7
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
DC-Characteristics (cont’d)
TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V
Parameter
Symbol refresh version Unit Note
4k row
8k row
170
140
115
125
100
85
mA
mA
mA
2) 3) 4)
2
2
mA
–
170
140
115
125
100
85
mA
mA
mA
2) 4)
140
105
85
140
105
85
mA
mA
2) 3) 4)
ICC5
900
900
µA
–
ICC5
200
200
µA
–
170
140
115
170
140
115
mA
mA
2) 4)
400
400
µA
ICC1
Operating Current
-40 ns version
-50 ns version
-60 ns version
-
(RAS, CAS, address cycling: tRC = tRC min.)
Standby Current (RAS=CAS= Vih)
ICC2
RAS Only Refresh Current:
-
ICC3
-40 ns version
-50 ns version
-60 ns version
(RAS cycling: CAS = VIH: tRC = tRC min.)
Hyper Page Mode (EDO) Current:
ICC4
-40 ns version
-50 ns version
-60 ns version
(RAS = VIL, CAS, address cycling: tHPC=tHPC min.)
Standby Current
(RAS=CAS= Vcc-0.2V)
Standby Current (L-Version)
(RAS=CAS= Vcc-0.2V)
ICC6
CAS Before RAS Refresh Current
-40 ns version
-50 ns version
-60 ns version
(RAS, CAS cycling: tRC = tRC min.)
Self Refresh Current (L-version only)
ICC7
(CBR cycle with tRAS>TRASSmin, CAS held low,
WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
Capacitance
TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Limit Values
min.
max.
Unit
Input capacitance (A0 to A11,A12)
CI1
–
5
pF
Input capacitance (RAS, CAS, WE, OE)
CI2
–
7
pF
I/O capacitance (I/O1-I/O8)
CIO
–
7
pF
Semiconductor Group
8
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
AC Characteristics 5)6)
TA = 0 to 70 °C,VCC = 3.3 V ± 0.3V , tT = 2 ns
Parameter
AC64-2E
Limit Values
Symbol
- 40
- 50
Unit
Note
- 60
min.
max.
min.
max.
min.
max.
Common Parameters
Random read or write cycle time
tRC
69
–
84
–
104
–
ns
RAS pulse width
tRAS
40
100k
50
100k
60
100k
ns
CAS pulse width
tCAS
6
100k
8
100k
10
100k
ns
RAS precharge time
tRP
25
–
30
–
40
–
ns
CAS precharge time
tCP
6
–
8
–
10
–
ns
Row address setup time
tASR
0
–
0
–
0
–
ns
Row address hold time
tRAH
5
–
7
–
10
–
ns
Column address setup time
tASC
0
–
0
–
0
–
ns
Column address hold time
tCAH
5
–
7
–
10
–
ns
RAS to CAS delay time
tRCD
9
30
11
37
14
45
ns
RAS to column address delay time
tRAD
7
20
9
25
12
30
ns
RAS hold time
tRSH
6
–
8
10
–
ns
CAS hold time
tCSH
32
–
40
48
–
ns
CAS to RAS precharge time
tCRP
5
–
5
–
5
–
ns
Transition time (rise and fall)
tT
1
50
1
50
1
50
ns
Refresh period for 8k-refresh-version tREF
–
128
–
128
–
128
ms
Refresh period for 4k-refresh version tREF
–
64
–
64
–
64
ms
Refresh period for L-versions
tREF
–
256
–
256
–
256
ms
Access time from RAS
tRAC
–
40
–
50
–
60
ns
8, 9
Access time from CAS
tCAC
–
10
–
13
–
15
ns
8, 9
Access time from column address
tAA
–
20
–
25
–
30
ns
8,10
OE access time
tOEA
–
10
–
13
–
15
ns
Column address to RAS lead time
tRAL
20
–
25
–
30
–
ns
Read command setup time
tRCS
0
–
0
–
0
–
ns
Read command hold time
tRCH
0
–
0
–
0
–
ns
7
Read Cycle
Semiconductor Group
9
11
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
AC Characteristics (cont’d) 5)6)
TA = 0 to 70 °C,VCC = 3.3 V ± 0.3V , tT = 2 ns
Parameter
AC64-2E
Limit Values
Symbol
- 40
- 50
Unit
Note
- 60
min.
max.
min.
max.
min.
max.
Read command hold time
referenced to RAS
tRRH
0
–
0
–
0
–
ns
11
CAS to output in low-Z
tCLZ
0
–
0
–
0
–
ns
8
Output buffer turn-off delay
tOFF
0
10
0
13
0
15
ns
12
Output buffer turn-off delay from OE tOEZ
0
10
0
13
0
15
ns
12
Data to CAS low delay
tDZC
0
–
0
–
0
–
ns
13
Data to OE low delay
tDZO
0
–
0
–
0
–
ns
13
CAS high to data delay
tCDD
10
–
13
–
15
–
ns
14
OE high to data delay
tODD
10
–
13
–
15
–
ns
14
Write command hold time
tWCH
5
–
7
–
10
–
ns
Write command pulse width
tWP
5
–
7
–
10
–
ns
Write command setup time
tWCS
0
–
0
–
0
–
ns
Write command to RAS lead time
tRWL
6
–
8
–
10
–
ns
Write command to CAS lead time
tCWL
6
–
8
–
10
–
ns
Data setup time
tDS
0
–
0
–
0
–
ns
16
Data hold time
tDH
5
–
7
–
10
–
ns
16
Read-write cycle time
tRWC
89
–
109
–
133
–
ns
RAS to WE delay time
tRWD
52
–
65
–
77
–
ns
15
CAS to WE delay time
tCWD
22
–
28
–
32
–
ns
15
Column address to WE delay time
tAWD
32
–
40
–
47
–
ns
15
OE command hold time
tOEH
5
–
7
–
10
–
ns
Hyper page mode (EDO) cycle time
tHPC
16
–
20
–
24
–
ns
Access time from CAS precharge
tCPA
–
22
–
27
–
32
ns
Output data hold time
tCOH
3
–
5
–
5
–
ns
Write Cycle
15
Read-modify-Write Cycle
Hyper Page Mode (EDO) Cycle
Semiconductor Group
10
7
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
AC Characteristics (cont’d) 5)6)
TA = 0 to 70 °C,VCC = 3.3 V ± 0.3V , tT = 2 ns
Parameter
AC64-2E
Limit Values
Symbol
- 40
- 50
Unit
Note
- 60
min.
max.
min.
max.
min.
max.
RAS pulse width in hyper page mode tRAS
40
200k
50
200k
60
200k
ns
CAS precharge to RAS Delay
tRHPC
22
–
27
–
32
–
ns
OE pulse width
tOEP
5
–
5
–
5
–
ns
OE hold time from CAS high
tOEHC
5
–
5
–
5
–
ns
Output buffer turn-off delay from WE tWEZ
0
10
0
13
0
15
ns
OE setup time prior to CAS
tOES
5
–
5
–
5
–
ns
Hyper page mode (EDO) read-write
cycle time
tPRWC
44
–
54
–
63
–
ns
CAS precharge to WE
tCPWD
34
–
42
–
49
–
ns
CAS setup time
tCSR
5
–
5
–
5
–
ns
CAS hold time
tCHR
5
–
5
–
10
–
ns
RAS to CAS precharge time
tRPC
5
–
5
–
5
–
ns
Write to RAS precharge time
tWRP
5
–
5
–
10
–
ns
Write hold time referenced to RAS
tWRH
5
–
5
–
10
–
ns
100k
_
100k
_
ns
17
Hyper Page Mode (EDO) Readmodify-Write Cycle
CAS before RAS Refresh Cycle
Self Refresh Cycle (L-versions only)
RAS pulse width
tRASS
100k
RAS precharge time
tRPS
69
–
84
–
104
–
ns
17
CAS hold time
tCHS
-50
–
-50
–
-50
–
ns
17
Write command setup time
tWTS
5
–
5
–
5
–
ns
18
Write command hold time
tWTH
5
–
5
–
5
–
ns
18
Test Mode Cycle
Semiconductor Group
11
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
Notes:
1) All voltages are referenced to VSS.
Vih may overshoot to Vcc + 2.0 V for pulse widths of < 4ns with 3.3V. Vil may undershoot to -2.0V for pulse
width < 4.0 ns with 3.3V. Pulse width measured at 50% points with amplitude measured peak to DC reference.
2) ICC1, ICC3, ICC4 and ICC6 and ICC7 depend on cycle rate.
3) ICC1 and ICC4 depend on output loading. Specified values are measured with the output open.
4) Address can be changed once or less while RAS = Vil.In the case of ICC4 it can be changed once or less
during a hyper page mode cycle ( thpc).
5) An initial pause of 100 µs is required after power-up followed by 8 RAS-only-refresh cycles, before proper
device operation is achieved. In case of using internal refresh counter, a minimum of 8 CAS-before-RAS
initialization cycles instead of 8 RAS cycles are required.
6) AC measurements assume tT = 2 ns.
7) VIH (min.) and VIL (max.) are reference levels for measuring timing of input signals. Also, transition times are
measured between VIH and VIL.
8) Measured with the specified current load and 100 pF at Voh = 2.0 V and Vol = 0.8 V.
9) Operation within the tRCD (max.) limit ensures that tRAC (max.) can be met. tRCD (max.) is specified as a
reference point only: If tRCD is greater than the specified tRCD (max.) limit, then access time is controlled by
tCAC.
10) Operation within the tRAD (max.) limit ensures that tRAC (max.) can be met. tRAD (max.) is specified as a
reference point only: If tRAD is greater than the specified tRAD (max.) limit, then access time is controlled by
tAA.
11) Either tRCH or tRRH must be satisfied for a read cycle.
12) tOFF (max.) and tOEZ (max.) define the time at which the outputs achieve the open-circuit condition and are
not referenced to output voltage levels.
13) Either tDZC or tDZO must be satisfied.
14) Either tCDD or tODD must be satisfied.
15) tWCS, tRWD, tCWD, tAWD and tCPWD are not restrictive operating parameters. They are included in the data
sheet as electrical characteristics only. If tWCS > tWCS (min.), the cycle is an early write cycle and the I/O pin
will remain open-circuit (high impedance) through the entire cycle; if tRWD > tRWD (min.), tCWD > tCWD
(min.), tAWD > tAWD (min.) and tCPWD > tCPWD (min.) , the cycle is a read-write cycle and I/O pins will
contain data read from the selected cells. If neither of the above sets of conditions is satisfied, the condition
of the I/O pins (at access time) is indeterminate.
16) These parameters are referenced to CAS leading edge in early write cycles and to WRITE leading edge in
Read-Modify-Write cycles.
17) When using Self Refresh mode, the following refresh operations must be performed to ensure proper DRAM
operation:
If row addresses are being refresh in an evenly distributed manner over the refresh interval using CBR refresh
cycles, then only one CBR cycle must be performed immediatly after exit from Self Refresh.
If row addresses are being refresh in any other manner (ROR - Distributed/Burst or CBR-Burst) over the
refresh interval, then a full set of row refreshed must be performed immediately before entry to and immediatey
after exit from Self Refresh
18) In a Test Mode Read Cycle, the value of trac, taa, tcac and tcpa are delayed by 5 ns from the specified value.
These parameters must be adjusted in Test Mode cycles by adding 5ns to the specified value. Associated
timings must be adjusted by 5 ns.
Semiconductor Group
12
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
tRC
tRAS
V
RAS
IH
VIL
tCSH
CAS
IH
VIL
tRAD
tASR
V
Address
AAA
AAAA
AAA
IH AAAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
VIL AAAAAAA
Row
tRAL
tCAH
tASC
AAAAAAA
AAA
AAAA
AAAA
AAA
AAAA
AAA
AAAA
AAAAAAA
AAA
tCRP
tRSH
tCAS
tRCD
V
tRP
tASR
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAA
AAA
Column
tRCH
tRAH
tRCS
tRRH
V
WE
AAAAAAAA
AAAAAAAA
AAAAAA
AAAA
IH AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
VIL
V
OE
I/O
(Inputs)
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAA
AAA
tAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
tOEA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
IH AAAA
VIL
V
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AA
tCDD
tDZC
tODD
tDZO
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
IH AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
VIL
Row
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
tCAC
tCLZ
V
OH
I/O
(Outputs) V
Hi Z
OL
tOFF
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAA
A
tOEZ
AAAA
AAAAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
Valid Data Out
Hi Z
tRAC
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
WL1
“H” or “L”
Read Cycle
Semiconductor Group
13
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
tRC
tRAS
tRP
V
IH
RAS
VIL
tCSH
tRCD
V
CAS
IH
VIL
tRAD
tASR
V
Address
AAAAAAA
AAAA
AAAAAAA
AAA
AAAA
AAA
IH AAAA
AAAAAAA
AAA
VIL
V
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAAAAAA
AAA
AAAA
AAA
tASR
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAA
Column
AAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
.
Row
tCWL
tWCS
IH AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
VIL
tCAH
tASC
Row
tCRP
tRAL
tRAH
WE
tRSH
tCAS
t WP
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
A
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
tWCH
tRWL
OE
V AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
IHAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
VIL AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
tDS
I/O
(Inputs)
tDH
V
IH
Valid Data In
VIL
V
OH
I/O
(Outputs) V
Hi Z
OL
AAAA
AAAAAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAAAAA
WL2
“H” or “L”
Write Cycle (Early Write)
Semiconductor Group
14
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
tRC
tRAS
V
RAS
IH
VIL
tCSH
tRCD
IH
VIL
tRAD
tASR
tCAH
tASC
V AAAAAAAAA
AAAAAA
IHAAAA
AAAA
AAAAAAAA
AAAAAA Row
Address V AAAA
AAAA
AAAA
AAAAA
IL AAAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
tRAL
Column
tASR
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
tCWL
tRAH
V
WE
tCRP
tRSH
tCAS
V
CAS
tRP
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
IH AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
VIL AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AA
tRWL
tWP
.
Row
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAA
tOEH
V
OE
IH AAAAAAAAAAAAAAAAAAAAAAA
VIL
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
tODD
tDS
tOEZ
tDZO
tDZC
I/O
(Inputs)
V
IH AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
VIL
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAA
AA
V
OH
I/O
(Outputs) V
tCLZ
tOEA
Hi-Z
OL
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAA
A
AAAA
A
AAAA
A
AAAA
A
AAAA
AAAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAA
“H” or “L”
Valid Data
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAA
Hi-Z
WL3
Write Cycle (OE Controlled Write)
Semiconductor Group
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAA
AAA
tDH
15
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
tRWC
tRAS
tRP
V
IH
RAS
tCSH
VIL
tRSH
tCAS
tRCD
V
tCRP
IH
CAS
VIL
tRAH
tCAH
tASR
V
A
IH AAA
AAA
AAAAA
Address
VIL
AAAAA
AAA
AAAA
Row
tASR
tASC
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAAAA
AA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAA
AAA
tCWL
tAWD
Column
tRAD
tCWD
tRWL
tWP
tRWD
V
WE
AAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
IH AAA
AAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
VIL AAA
AAAAAAAAAAAAAAAAAAA
AAAA
Row
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAA
AA
tAA
tRCS
tOEH
tOEA
V
OE
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
IH AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
VIL AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAA
tDS
tDZO
tDZC
V
I/O
(Inputs)
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAAAAAAAA
A
tDH
AAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAAAAAAAAAAAAAAAAAA
IH AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
VIL AAAAAAAAAAAAAAAAAAAAAAAAAA
AA
AAAA
AAAAAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAAAAAA
AAA
tCLZ
Valid
Data in
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAAA
AAA
tODD
tCAC
tOEZ
V
OH
AAAA
AA
AAAA
AA
AAAA
AA Data
AAAA
AAAAAA
AA Out
AAAA
AA
I/O
(Outputs) VOL
tRAC
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
“H” or “L”
WL4
Read-Write (Read-Modify-Write) Cycle
Semiconductor Group
16
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
tRP
tRAS
V
tRHPC
tRCD
IH
RAS
VIL
tRSH
tHPC
tCRP
V
CAS
tCAS
tCAS
IH
VIL
tCSH
tRAH tASC
tASR
V
Address
tCP
tCAS
tCRP
IH AAAA
AAAAAA
VIL
AAAA
AA
AAAA
AAAA
AAAAAA
tRAL
tCAH
tASC tCAH
tASC tCAH
AAA
AAAAAAAAAA
AAAAAAAAAA
AAAAAAAAA
AAA
AAAAAAAAAA
AAAAAAAAAA
AAAAAAAAA
AAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAA
AA Column 2 AAAA
AAAA
AAAAAA
AA Column N AAAA
AAAA
AAAAA
A
AAA
AAAA
AAAA
Row AAA
AAA Column 1 AAAA
AAAAAAAA
AAAAAA
AA
AAAAAAAA
AAAAAA
AA
AAAAAAAA
AAAAA
A
tRAD
tRRH
tRCH
tRCS
WE
VIH AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
VIL
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
tOES
V
OE
OH AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
V
OL
tCAC
tAA
tCAC
tAA
tCPA
tCPA
tOEA
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AAAAAAAAAA
AA
tOFF
AAAA
AAAAAAAA
AAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
A
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
tRAC
tAA
tCAC
tOEZ
tCOH
tCOH
tCLZ
V
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
I/O
IH
(Output) V
IL
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
Data Out
1
Data Out
2
AAA
AAA
AAA
AAA
AAA
AAA
AAA
Data Out
N
WL5
“H” or “L”
Hyper Page Mode (EDO) Read Cycle
Semiconductor Group
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
17
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
tRP
tRAS
V
tRCD
IH
RAS
tRHCP
VIL
tRSH
tHPC
tCRP
V
CAS
tCAS
IH
VIL
tCSH
tRAH tASC
tASR
V
Address
tCAS
tCP
tCAS
tCRP
IH AAAA
AAAAAA
VIL
AAAA
AA
AAAA
AAAA
AAAAAA
tRAL
tASC tCAH
tASC tCAH
tCAH
AAA
AAAAAAAAAA
AAAAAAAAAA
AAAAAAAAA
AAA
AAAAAAAAAA
AAAAAAAAAA
AAAAAAAAA
AAA
AAAAAAAA
AAAAAA
AA
AAAAAAAA
AAAAAA
AA
AAAAAAAA
AAAAA
A
AAAA
Column N AAAA
Column 2 AAAA
AAA
AAAA
AAAA
Row AAA
AAA Column 1 AAAA
AAAAAAAA
AAAAAA
AA
AAAAAAAA
AAAAAA
AA
AAAAAAAA
AAAAA
A
tRAD
tRRH
tRCH
tRCS
WE
VIH AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
VIL
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
tCAC
tAA
tOES
OE
V
AAAAAAAAAAAAAAAAAAAAAAAAAAAAA
V
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
OH AAAA
OL
tOEA
tCPA
tCLZ
V
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
A
AAAA
A
AAAA
A
AAAA
A
AAAA
A
AAAA
AAAAA
A
tOEP
tOFF
tOEHC
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
tOEP tOEA
tOEA
tOEZ
tOEZ
Data Out
1
tOEZ
AAA
AAA
AAA
AAA
AAA
AAA
AAA
Data Out
2
AAA
AAA
AAA
AAA
AAA
AAA
AAA
Data Out
N
WL6
“H” or “L”
Hyper Page Mode (EDO) Read Cycle (OE Control)
Semiconductor Group
tCPA
tOEHC
tRAC
tAA
tCAC
I/O
IH
(Output) V
IL
tCAC
tAA
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AAAAAAAAAA
AA
18
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
tRP
tRAS
V
tRCD
IH
RAS
tRHPC
VIL
tRSH
tHPC
tCRP
V
CAS
tCSH
tRAH tASC
tASR
V
AAAAA
AAAA
AA
AAAA
AAAA
AAAAAA
IH AAAA
AAAAAA
VIL
Row
AAA
AAA
AAA
AAA
AAA
AAA
tRAL
Column
tRCS
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
1 AAAAAAAAAA
AA
AAAA
AAAA
AAAAAAAAAA
AA
Column
tRCH
tRRH
tRCH
tRCH
tRCS
AAAA
AAAA
A
AAAA
AAAA
A
AAAA
AAAA
A
AAAA
AAAA
A
AAAA
AAAA
A
AAAA
AAAA
AAAAAAAAA
A
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAA
tCAC
tOES
V
Column
AAAA
AAAA
A
AAAA
AAAA
A
AAAA
AAAA
A
AAAA
AAAA
N AAAAAAAAAA
AAAA
AAAA
AAAAAAAAA
A
tAA
tRCS
tWP
OE
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
2 AAAAAAAAAA
AA
AAAA
AAAA
AAAAAAAAAA
AA
tAA
VIH AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
VIL
tASC tCAH
tASC tCAH
tCAH
tRAD
WE
tCAS
IH
VIL
Address
tCAS
tCP
tCAS
tCRP
OH AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
tCPA
tWP
tCAC
tOFF
tCPA
tOEA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAA
AAA
AAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
A
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAA
A
V
OL AAAAAAAAAAAAAAAAAAAAAAAAAAAAA
tRAC
tAA
tCAC
tOEZ
tWEZ
tWEZ
tCLZ
V
AAAA
A
AAAA
AAAAA
A
AAAA
A
AAAA
A
AAAA
AAAAA
A
I/O
IH
(Output) V
IL
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
Data Out
1
Data Out
2
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
Data Out
N
WL7
“H” or “L”
Hyper Page Mode (EDO) Read Cycle (WE Control)
Semiconductor Group
AAA
AAA
AAA
AAA
AAA
AAA
AAA
19
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
tRP
tRAS
V
tRCD
IH
RAS
tRHPC
VIL
tCRP
V
CAS
tCP
tRAH tASC
tRAL
AAAAAAAA
AAAAAAAA
VIH AAAA
AAAA
AAAAAAAA
AAAAAAAA
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V
tASC tCAH
tASC tCAH
tCAH
V AAAAA
AAAA
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AA
IHAAAAA Row AAA
AAA
AAAA
AAAA
AA
AAAA
AA
AAA
AAAA
AAAA
AA Column 2
Column
1
AAAA
AAA
AAAA
AAAA
Addr
AAAAAA
AAA
AAAA
AAAAAA
AA
VIL AAAA
AAA
AAAAAAAA
AA
tWCS
OE
tCAS
tCSH
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WE
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IH
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Address
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tCRP
tRSH
tHPC
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AAAA
A
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A
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A
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V
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OH AAAA
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tDS
V
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I/O (Input) V
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AAA
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AAA
AAAA
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Data In 1 AAAA
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AA Data In 2
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tDS
AAAA
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Data In N
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A
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A
WL8
Hyper Page Mode (EDO) Early Write Cycle
Semiconductor Group
tDH
20
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
tRP
tRAS
V
tRCD
IH
RAS
VIL
tRSH
tHPC
tCRP
V
CAS
tCP
tCAS
IH
VIL
tCSH
V
IH AAAA
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VIL
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AA
AAAA
AAAA
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tASR
Address
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tASC tCAH
AAA
AAAAAAAAAA
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AAA
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AAAAAAAAA
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AAAAAAAA
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AA
AAAAAAAA
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AA
AAAAAAAA
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A
AAAA
Column 2 AAAA
Column N AAAA
AAA
AAAA
AAAA
Row AAA
AAA Column 1 AAAA
AAAAAAAA
AAAAAA
AA
AAAAAAAA
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AA
AAAAAAAA
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A
tRAD
tCWL
tCWL
tCWL
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tRCS
tRCS
WE
OE
tRCS
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V
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tWP
tWP
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A
AAAA
A
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A
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A
tODD
tDS
tDS
tDH
tDH
tODD
I/O
(Input)
V
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AAAAAAA
AAAA
IH
VIL
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
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AAAA
AAAA
Data In
1
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
Data In
N
WL16
“H” or “L”
Hyper Page Mode (EDO) Late Write Cycle
Semiconductor Group
Data In
2
21
tDS
Data
Out
tCAC
tAA
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
tDH
tOEH
tDS
Data In
Data
Out
tOEZ
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
Data
Out
tDS
tRAC
V
OH
I/O
(Outputs) V
IH
OL
tOEH
tOEZ tDH
AAAAAA
AAAA
AA
AAAA
AAAAAA
AA
tCAC
Data In
tODD
tAA
tCLZ
tCPA
tDZC
AAAA
A
AAAA
AAAAA
A
I/O
(Inputs) V IL
OE
22
AAAA
A
AAAA
A
AAAA
A
AAAA
A
AAAA
A
AAAA
AAAAA
A
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
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AAAA
AAA
AAAA
AAAAAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
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AAAA
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AAAA
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AAAA
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AAAA
AAA
AAAA
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AAAA
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AAAA
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AAA
AAAA
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V
V
IH
AAAA
AA
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AA
AAAA
AA
AAAA
AA
AAAA
AA
AAAA
AAAAAA
AA
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AA
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AA
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AA
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AA
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AA
AAAA
AA
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AA
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AA
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AA
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AA
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AA
AAAA
AA
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AA
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AA
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AA
AAAA
A
AAAA
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A
tDZC
tCLZ
tDZO
AAAA
AA
AAAA
AA
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AA
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AA
AAAA
AA
AAAA
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AA
AAAA
AA
AAAA
AA
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AA
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AA
tDH
Data In
tCLZ
tCPA
tDZC
AAAA
A
AAAA
A
AAAA
A
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A
AAAA
A
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AAAA
AA
AAAA
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AA
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AA
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AA
AAAA
AA
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AA
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AA
V IL
tOEA
tOEA
tAWD
tAA
V
IH
WE
V IL
tRCS
AAAA
AAA
AAAA
AAA
AAAA
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AAA
AAAA
AAA
AAAA
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AAAA
AAA
AAAA
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AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
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AAA
AAAA
AAAAAAA
AAA
Hyper Page Mode (EDO) Read-Modify-Write Cycle
Semiconductor Group
AAAAA
A
AAAA
AAAAA
tODD
tWP
tOEA
tWP
tAWD
tWP
tCWL
Row
IH
V
Address
V IL
AAAA
A
AAAA
AAAAAAA
AAAA
AAAAA
tASR
CAS
V IL
IH
tAWD
tCPWD
tCWD
tCPWD
tCWD
tASC
Column
tCAH
AAAA
AA
AAAA
AAAA
A
AAAA
AAAAAA
tRAD
tRAH
tRCD
V
tRWD
tCWD
tASC
Column
tCAH
tCP
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AAAAAAA
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
A
AAAA
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AAAA
AAAAA
tCAS
tCSH
IH
V IL
RAS
tCWL
Column
tASC
AAAA
A
AAAA
AAAAAAA
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AA
AAAA
AAAA
AAAAAAA
AAAA
AAAA
AA
AAAA
AAAA
A
AAAA
AAAAAA
tCAS
tPRWC
tRASP
V
tRWL
tCWL
Row
tASR
tRAL
tCAH
tCAS
tRSH
tCRP
tRP
AAAAA
AAAAA
AAAAA
AAAAA
AAA
AAAAA
AA
AAAAA
AAAAA
AAA
AAAAA
AA
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AAAAA
AAAAA
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AA
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AA
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AA
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AA
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AAAA
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A
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A
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A
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A
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A
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AA
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AAAA
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AAAA
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AA
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AAAA
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AA
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AA
AAAA
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tOEH
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
WL17
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
tRC
tRAS
tRP
V
IH
RAS
VIL
tCRP
tRPC
V
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAAAAAA
IH
CAS
VIL
tRAH
tASR
tASR
V
Address
AAAA
AAAA
IH AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
VIL AAAAAAAAAAAA
AAAA
Row
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
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AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
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AAAA
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AAAA
A
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A
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A
V
OH
I/O
(Outputs) V
HI-Z
OL
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAAAAAA
“H” or “L”
WL9
RAS Only Refresh Cycle
Semiconductor Group
23
Row
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
tRC
tRP
V
RAS
tRAS
IH
VIL
tRPC
tCSR
tCRP
tCP
tRPC
tCHR
V
CAS
tRP
AAAA
A
AAAA
A
AAAA
A
AAAA
A
AAAA
A
AAAA
AAAAA
A
IH
VIL
tWRP
tWRH
V
WE
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AAAA
AAAA
AAAA
AAAAAAAA
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AAAAAAAA
AAAAAAAA
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AAAA
IH AAAA
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VIL
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AAAA
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tOEZ
V
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IH
VIL
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AAAA
AAAA
AAAA
IH
I/O
(Inputs) V
IL
tODD
V
OH
I/O
(Outputs)VOL
HI-Z
tOFF
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
“H” or “L”
WL10
CAS-before-RAS Refresh Cycle
Semiconductor Group
24
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
tRC
tRC
RAS
tRP
tRAS
V
tRP
tRAS
IH
VIL
tRSH
tRCD
tCRP
tCHR
V
CAS
IH
tRAD
VIL
tWRP
tASC
tASR
Address
V AAAAAAA
IHAAAA
AAAAAAA
AAA
AAAAAAA
AAA
VIL AAAA
AAAA
AAAAAAA
AAA
tRAH
AAAA
AAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
AAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AAAAAA Column AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
Row AAAA
AAAA
AAAA
AAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAA
AA
Row
tRRH
tRCS
WE
tASR
tWRH
tCAH
V AAAAAAAAAAAAAAAA
IHAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
VIL AAAA
AAAAAAAAAAAA
AAAAAAAA
AAAA
AAAA
AA
AAAA
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AA
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AA
AAAA
AA
AAAA
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AA
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AAAA
AAAAAAAA
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AAAAAAAA
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AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
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AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
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AAAA
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AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
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AAAAAAAA
AAAA
tOEA
OE
V AAAAAAAAAAAAAAAAAAAAAAAAAAAAA
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AAAAAAAA
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VIL AAAA
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AAAA
AAAA
AAAA
AAAA
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AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAA
tDZC
tCDD
tDZO
V
I/O
(Inputs)
IH
VIL
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAAA
tODD
tCAC
tOFF
tCLZ
tOEZ
tRAC
V
AAAA
A
AAAA
A
AAAA
A
AAAA
A
AAAA
AAAAA
A
OH
I/O
(Outputs) V
OL
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAA
AAAA
AAAAAAA
AAA
Valid Data Out
“H” or “L”
HI-Z
WL11
Hidden Refresh Read Cycle
Semiconductor Group
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAAAAAAAAAAAAAAA
A
25
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
tRC
tRC
tRP
tRAS
V
RAS
IH
tRAS
tRP
VIL
tRCD
tRSH
tCHR
tCRP
V
CAS
IH
VIL
tRAD
tRAH
tASC
tCAH
tASR
Address
V AAAAAAA
IHAAAAAAA
AAAAAAA
Row
AAAAAAA
VIL AAAA
AAAAAAA
AAA
AAAA
AA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AA Column AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AA
AAAA
A
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAA
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
AA
tWCS
tWRP tWRH
tWCH
tWP
V
WE
AAAAAAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAA
IH AAAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
VIL AAAA
AAA
tDS
I/O
(Input)
tASR
V AAAAAAAAAAAAAAA
IHAAAA
AAAAAAAA
AAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAAA
AAAA
AAAAAAAAAAA
AAA
V AAAA
IL AAAAAAAAAAAAAAA
AAAA
AAAA
AAAA
AAAA
AAAA
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AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
AAAA
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AAAA
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AAAA
AAAA
AAAA
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AAAA
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AAAA
AAAA
AAAA
AAAA
AAAA
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AAAA
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AAAA
AAAA
AAAA
AAAA
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AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
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AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
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AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
AAAA
AAA
tDH
Valid Data
AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
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AAAAAAAA
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AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAA
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AAAA
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AAAA
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AAAA
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AAAA
AAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
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AAAAAAAA
AAAAAAAA
AAAAAAAA
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AAAAAAAA
AAAAAAAA
AAAA
V
OH
I/O
(Output) V
OL
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAAAAAA
AAAA
AAAA
AAAA
HI-Z
“H” or “L”
WL12
Hidden Refresh Early Write Cycle
Semiconductor Group
Row
26
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
tRP
V
RAS
tRASS
tRPS
IH
VIL
tRPC
tCP
V
CAS
tCRP
tCHS
tCSR
AAAA
AAAA
A
AAAA
AAAA
A
AAAA
AAAA
A
AAAA
AAAA
A
AAAA
AAAA
AAAAAAAAA
A
IH
VIL
tWRP
tWRH
V
WE
AAAAAAAAAAAAAAAAAAA
AAAA
AAAAAAAA
AAAAAAA
AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
AAA
IH AAAA
AAAAAAAA
AAAAAAAA
AAAAAAAA
AAAAAAA
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“H” or “L”
WL13
Self Refresh (Sleep Mode)
Semiconductor Group
27
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
tRC
tRP
V
RAS
tRAS
tRP
IH
VIL
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tCSR
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HI-Z
tOFF
“H” or “L”
WL15
Test Mode Entry Cycle
Semiconductor Group
28
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
Package Outlines
Plastic Package P-SOJ-32-1 (400 mil)
(Small Outline J-lead, SMD)
Plastic Package P-TSOPII-32-1 (400 mil)
(Small Outline J-lead, SMD)
Semiconductor Group
29