DMTH4005SPS Green 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS Features 40V ID TC = +25°C (Note 9) RDS(ON) Max 100A 3.7mΩ @ VGS = 10V Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Rated to +175°C – Ideal For High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable And Robust End Application Low RDS(ON) – Minimizes Power Losses Low Qg – Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH4005SPSQ) Engine Management Systems Mechanical Data Body Control Electronics DC-DC Converters ® Case: PowerDI 5060-8 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 S D S D S D G D Pin1 Top View Bottom View Internal Schematic Top View Pin Configuration Ordering Information (Note 4) Part Number DMTH4005SPS-13 Notes: Case PowerDI5060-8 Packaging 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information D D D D = Manufacturer’s Marking H4005SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 17 = 2017) WW = Week (01 to 53) H4005SS YY WW S S S G POWERDI is a registered trademark of Diodes Incorporated. DMTH4005SPS Document number: DS38150 Rev. 3 - 2 1 of 7 www.diodes.com September 2017 © Diodes Incorporated DMTH4005SPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C TC = +25°C TC = +100°C Continuous Drain Current (Note 5) Continuous Drain Current (Notes 6 & 9) Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L=0.6mH Avalanche Energy, L=0.6mH ID Value 40 ±20 20.9 17.5 Unit V V ID 100 100 A IS IDM IAS EAS 100 320 21 132.3 A A A mJ Symbol PD RθJA PD RθJC TJ, TSTG Value 2.6 57 150 1 -55 to +175 Unit W °C/W W °C/W °C A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range TA= +25°C TC = +25°C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 40 — V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS 1 μA VDS = 32V, VGS = 0V Gate-Source Leakage IGSS — — — ±100 nA VGS = ±20V, VDS = 0V VDS = VGS, ID = 250μA OFF CHARACTERISTICS (Note 7) — — ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage VSD 2 — 4 V — — 2.9 3.7 mΩ VGS = 10V, ID = 50A 0.88 — V VGS = 0V, IS = 50A 3062 pF VDS = 20V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 20V, ID = 50A, VGS = 10V ns VDD = 20V, VGS = 10V, ID = 50A, RG = 3Ω DYNAMIC CHARACTERISTICS (Note 8) tF — — — — — — — — — — — 7.3 — — — — — — — — — — — Body Diode Reverse Recovery Time tRR — 31.8 — ns Body Diode Reverse Recovery Charge QRR — 26.5 — nC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time tD(ON) Turn-On Rise Time tR Turn-Off Delay Time Turn-Off Fall Time Notes: tD(OFF) 902.2 179.2 0.67 49.1 10.3 13 8.7 6.8 18.6 IF = 50A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package limited. DMTH4005SPS Document number: DS38150 Rev. 3 - 2 2 of 7 www.diodes.com September 2017 © Diodes Incorporated DMTH4005SPS 30 100.0 VGS = 6.0V 80.0 VGS = 5.0V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 6.0V VGS = 10.0V 90.0 70.0 60.0 50.0 VGS = 4.5V 40.0 30.0 20.0 VGS = 3.8V 10.0 20 15 125℃ 10 5 VGS = 4.0V 0 -55℃ 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 3 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 5.00 4.50 VGS = 6.0V 4.00 3.50 3.00 VGS = 10.0V 2.50 2.00 0 5 Figure 2 Typical Transfer Characteristic Figure 1 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) 25℃ 175℃ 0 0.0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) 30 20 16 12 ID = 50A ID = 20A 8 4 0 2 Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 20 2 0.006 VGS = 10V 175℃ 0.005 150℃ 125℃ 0.004 85℃ 0.003 25℃ 0.002 -55℃ 0.001 0 10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 85℃ 150℃ 20 30 40 50 60 70 80 90 100 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMTH4005SPS Document number: DS38150 Rev. 3 - 2 3 of 7 www.diodes.com 1.8 1.6 VGS = 10V, ID = 50A 1.4 1.2 VGS = 6V, ID = 50A 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6 On-Resistance Variation with Temperature September 2017 © Diodes Incorporated 0.01 0.008 VGS = 6V, ID = 50A 0.006 0.004 VGS = 10V, ID = 50A 0.002 0 -50 -25 3.4 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMTH4005SPS 3.2 3 ID = 1mA 2.8 2.6 2.4 2.2 ID = 250μA 2 1.8 1.6 1.4 1.2 1 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) -50 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8 Gate Threshold Variation vs. Temperature Figure 7 On-Resistance Variation with Temperature 10000 100 f = 1MHz 90 C iss VGS = 0V CT , JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) -25 80 70 60 50 40 TA = 125oC 30 20 TA = 150oC 10 175oC TA = TA = 85oC TA = 25oC TA = -55oC 0 1000 Crss 100 10 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Coss 1.5 0 5 10 15 20 25 30 35 V DS, DRAIN-SOURCE VOLTAGE (V) Figure Figure 11 10 Typical Typical Junction Junction Capacitance Capacitance 40 Figure 9 Diode Forward Voltage vs. Current 1000 10 8 100 ID, DRAIN CURRENT (A) VGS , GATE-SOURCE VGS GATE THRESHOLDVOLTAGE VOLTAGE(V) (V) RDS(ON) LIMITED VDS = 20V I D = 50A 6 4 PW =1µs PW =10µs 10 PW =1ms 1 2 0 PW =100µs TJ(MAX)=175℃ TC=25℃ Single Pulse DUT on infinite heatsink VGS=10V PW =10ms PW =100ms PW =1s 0.1 0 10 20 30 40 Qg , TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMTH4005SPS Document number: DS38150 Rev. 3 - 2 50 4 of 7 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 September 2017 © Diodes Incorporated DMTH4005SPS 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJC(t) = r(t) * RθJC RθJC = 1℃/W Duty Cycle, D = t1 / t2 D=0.005 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 t1, PULSE DURATION TIME (sec) 1 10 Figure 13. Transient Thermal Resistance DMTH4005SPS Document number: DS38150 Rev. 3 - 2 5 of 7 www.diodes.com September 2017 © Diodes Incorporated DMTH4005SPS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M M1 Detail A L1 G b3 (4X) PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 θ 10º 12º 11º θ1 6º 8º 7º All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMTH4005SPS Document number: DS38150 Rev. 3 - 2 G Y(4x) 6 of 7 www.diodes.com Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 September 2017 © Diodes Incorporated DMTH4005SPS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMTH4005SPS Document number: DS38150 Rev. 3 - 2 7 of 7 www.diodes.com September 2017 © Diodes Incorporated