DIGITRON SEMICONDUCTORS MAC229(A) SERIES SILICON BIDIRECTIONAL THYRISTORS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak repetitive off-state voltage (TJ = -40 to +110°C, ½ sine wave, 50 to 60Hz, gate open) MAC229-4, MAC229A-4 MAC229-6, MAC229A-6 MAC229-8, MAC229A-8 MAC229-10, MAC229A-10 Value Unit (1) 200 400 600 800 VDRM RMS on-state current (Full cycle sine wave, 50 to 60Hz, TC = 80°C) IT(RMS) Volts 8 Amps Peak non-repetitive surge current (1 cycle, 60Hz, TJ = 110°C) ITSM Circuit fusing considerations (t = 8.3ms) I2t 26 A2s Peak gate current (t ≤ 2µs) IGM ±2 Amps Peak gate voltage (t ≤ 2µs) VGM ±10 Volts Peak gate power (t ≤ 2µs) PGM 20 Watts PG(AV) 0.5 Watts TJ -40 to +110 °C Tstg -40 to +150 °C 8 In. lb. Average gate power (TC = 80°C, t ≤ 8.3ms) Operating junction temperature range Storage temperature range Amps 80 Mounting torque Note 1: VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case RӨJC 2.2 °C/W Thermal resistance, junction to ambient RӨJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted) Symbol Min Typ. Max Unit Peak blocking current (2) (VD = Rated VDRM, gate open, TJ = 25°C) (VD = Rated VDRM, gate open, TJ = 110°C) Characteristic IDRM - - 10 2 µA mA Peak on-state voltage (ITM = 11A peak, pulse width ≤ 2ms, duty cycle ≤ 2%.) VTM - - 1.8 Gate trigger current (continuous dc) (VD = 12V, RL = 100Ω) MT2(+),G(+); MT2(+),G(-); MT2(-),G(-) MT2(-),G(+) “A” suffix only IGT - - 10 15 Gate trigger voltage (continuous dc) (VD = 12V, RL = 100Ω) MT2(+),G(+); MT2(+),G(-); MT2(-),G(-) MT2(-),G(+) “A” suffix only (VD = Rated VDRM, RL = 10kΩ, TC = 110°C) MT2(+),G(+); MT2(+),G(-); MT2(-),G(-), all types MT2(-),G(+) “A” suffix only VGT - - 2.0 2.5 0.2 0.2 - - - - 15 - 1.5 - Holding current (VD = 12V, ITM = 200mA, gate open) IH Gate controlled turn-on time (VD = Rated VDRM, ITM = 16A, IG = 30mA) tgt 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20130213 Volts mA Volts mA µs DIGITRON SEMICONDUCTORS MAC229(A) SERIES SILICON BIDIRECTIONAL THYRISTORS Characteristic Symbol Critical rate of rise of off-state voltage (VD = Rated VDRM, exponential waveform, TC = 110°C) dv/dt Critical rate of rise of commutation voltage (VD = Rated VDRM, ITM = 11.3A peak, commutating di/dt = 4.1A/ms, gate unenergized, TC = 80°C) dv/dt(c) Min Typ. Max - 25 - - 5 - Unit V/µs V/µs Note 2: Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltages such that the voltage applied exceeds the rated blocking voltage. MECHANICAL CHARACTERISTIC Case TO-220AB Marking Alpha-numeric Pin out See below TO-220AB A B C D F G H J K L N Q R S T U V Z 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 Inches Min Max 0.575 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.050 0.045 0.080 Millimeters Min Max 14.600 15.750 9.650 10.290 4.060 4.820 0.640 0.890 3.610 3.730 2.410 2.670 2.790 3.930 0.360 0.560 12.700 14.270 1.140 1.390 4.830 5.330 2.540 3.040 2.040 2.790 1.140 1.390 5.970 6.480 1.270 1.140 2.030 [email protected] www.digitroncorp.com Rev. 20130213