Z ibo Seno Electronic Engineering Co., Ltd. ES1AW – ES1JW 1.0A GLASS PASSIVATED SUPERFAST RECOVERY DIODE Mechanical Data ! ! ! ! ! ! 0.10-0.30 1.4± 0.15 1.9± 0.1 ! Glass passivated device ! Ideally Suited for Automatic Assembly SOD - 123FL ! Low Forward Voltage Drop, High Efficiency ! Surge Overload Rating to 2 5 A Peak Cathode Band Top View ! Low Power Loss ! Ultra-Fast Recovery Time ! Plastic Case Material has UL Flammability ! Classification Rating 94V-O 2.8 ± 0.1 1.0±0.2 Features 0.6±0.25 Case: SOD-123FL, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.01 grams (approx.) Lead Free: For RoHS / Lead Free Version 3.7±0.2 Dimensions in millimeters Maximum Ratings and Electrical Characteristics Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current ES1AW ES1B WES1CW ES1DW ES1EW ES1GWES1HWES1JW UNITS VRRM VRWM VR 50 100 150 200 VR(RMS) 35 70 105 140 300 210 400 500 600 V 280 350 420 V IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 25 A Forward Voltage @IF = 1.0A VFM @TA = 25°C @TA = 100°C IRM 10 500 µA Reverse Recovery Time (Note 2) t rr 35 nS Typical Junction Capacitance (Note 2) Cj 4 pF RJL 30 °C/W Peak Reverse Current At Rated DC Blocking Voltage @TL = 100°C @TA=25°C unless otherwise specified Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range 1.3 1.0 Tj, TSTG 1.7 V -65 to +150 °C Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. ES1AW – ES1JW 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. ES1AW – ES1JW 1.0 10 IF, INSTANTANEOUS FWD CURRENT (A) I(AV), AVERAGE FWD RECTIFIED CURRENT (A) 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0 25 50 75 100 125 150 175 1.0 0.1 Tj = 25°C Pulse width = 300 µs 0.01 200 30 1.2 1.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 100 Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC Method) Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) TA, AMBIENT TEMPERATURE (°C) Fig. 1 Forward Derating Curve 20 10 Tj = 25°C f = 1MHz 10 1 0 1 10 NUMBER OF CYCLES AT 60 Hz Fig. 3 Peak Forward Surge Current 100 1 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 trr 50Ω NI (Non-inductive) (-) 10Ω NI Device Under Test (+) +0.5A (-) 0A Pulse Generator (Note 2) 50V DC Approx 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit ES1AW – ES1JW 2 of 2 www.senocn.com Alldatasheet