CYStech Electronics Corp. Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : 2012.03.26 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP9435BDYAQ8 BVDSS -30V ID RDSON(MAX)@VGS=-10V, ID=-7A -8.4A 23mΩ(typ.) RDSON(MAX)@VGS=-4.5V, ID=-5A 38mΩ(typ.) Description The MTP9435BDYAQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package Equivalent Circuit Outline MTP9435BDYAQ8 SOP-8 G：Gate S :Source D : Drain Ordering Information Device Package Shipping Marking MTP9435BDYAQ8 SOP-8 (Pb-free lead plating package) 2500 pcs /Tape & Reel 9435BDYSC MTP9435BDYAQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : 2012.03.26 Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current (Note 1) @ VGS=-10V Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) Symbol Limits Unit BVDSS VGS ID IDM Pd -30 ±20 -8.4 -40 2.5 0.02 -55~+150 -55~+150 50 V V A A W W / °C °C °C °C/W Tj Tstg Rth,j-a Note : 1.Surface mounted on 1 in² FR-4 board with 2 oz. copper, t≤10sec. The value in any given application depends on the user’s specific board design. 2.Pulse width ≤300μs, Duty Cycle≤2% Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 V VGS=0, ID=-250μA VGS(th) -1 -1.5 -2.5 V VDS=VGS, ID=-250μA IGSS ±100 nA VGS=±20V, VDS=0 IDSS -1 μA VDS=-30V, VGS=0 23 30 ID=-7A, VGS=-10V *RDS(ON) mΩ 38 50 ID=-5A, VGS=-4.5V *GFS 11 S VDS=-5V, ID=-7A Dynamic Ciss 1316 pF VDS=-15V, VGS=0, f=1MHz Coss 143 Crss 118 *td(ON) 14 VDD=-15V, ID=-1A, *tr 7 ns VGS=-10V, RG=6Ω, RD=15Ω *td(OFF) 50 *tf 23 *Qg 16 nC VDS=-15V, VGS=-10V, ID=-7A *Qgs 4.9 *Qgd 5.2 2 Ω Rg VDS=0V, VGS=15mV, f=1MHz Source Drain Diode *VSD -0.77 -1.2 V VGS=0V, IS=-1.7A *IS 3.5 A *ISM 14 *trr 23 ns IF=7A, dIF/dt=100A/μs *Qrr 14 nC *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTP9435BDYAQ8 CYStek Product Specification Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : 2012.03.26 Page No. : 3/8 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 40 40 -ID, Drain Current (A) -BVDSS, Drain-Source Breakdown Voltage(V) -10V, -9V, -8V, -7V,-6V,-5V 35 30 VGS=-4V 25 20 15 VGS=-3V 10 35 30 ID=-250μA, VGS=0V VGS=-2.5V 5 25 0 0 1 2 3 4 -VDS , Drain-Source Voltage(V) -60 5 -20 Static Drain-Source On-State resistance vs Drain Current 1.2 VGS=0V -VSD, Source-Drain Voltage(V) R DS(on) , Static Drain-Source On-State Resistance(mΩ) 180 Source Drain Current vs Source-Drain Voltage 1000 VGS=-3V 100 VGS=-4.5V Tj=25°C 1 0.8 Tj=150°C 0.6 0.4 VGS=-10V 0.2 10 0.01 0.1 1 -ID, Drain Current(A) 0 10 R DS(on) , Static Drain-Source On-State Resistance(mΩ) 200 180 160 140 120 100 80 ID=-7A ID=-5A 60 40 20 0 0 MTP9435BDYAQ8 2 4 6 8 -VGS, Gate-Source Voltage(V) 2 4 6 8 -IS, Source Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(on) , Static Drain-Source OnState Resistance(mΩ) 20 60 100 140 Tj, Junction Temperature(°C) 10 60 55 50 45 40 35 30 25 20 15 10 5 0 VGS=-4.5V, ID=-5A VGS=-10V, ID=-7A -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : 2012.03.26 Page No. : 4/8 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 2 -VGS(th) , Threshold Voltage(V) 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.8 1.6 1.4 1.2 ID=-250μA 1 0.8 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -60 100 -20 Forward Transfer Admittance vs Drain Current 100 140 10 10 1 8 -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 60 Gate Charge Characteristics 100 VDS=-5V Pulsed TA=25°C 6 4 VDS=-15V ID=-7A 2 0.1 0 0.01 0.1 1 -ID, Drain Current(A) 10 0 4 8 12 Qg, Total Gate Charge(nC) 16 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 7 100 -ID, Maximum Drain Current(A) 10μs 100μs -ID, Drain Current(A) 20 Tj, Junction Temperature(°C) 10 1ms 10ms 100ms 1 1s DC 0.1 TA=25°C, Tj=150°C, VGS=-10V θJA=50°C/W, Single Pulse 6 5 4 3 2 TA=25°C, VGS=-10V 1 0 0.01 0.1 MTP9435BDYAQ8 1 10 -ID, Drain-Source Voltage(V) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : 2012.03.26 Page No. : 5/8 CYStech Electronics Corp. Typical Characteristic Curves(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 50 40 VDS=-5V 35 -ID, Drain Current (A) TJ(MAX) =150°C TA=25°C θJA=50°C/W 40 Power (W) Typical Transfer Characteristics 30 20 10 30 25 20 15 10 5 0 0.001 0 0.01 0.1 1 Pulse Width(s) 10 100 0 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 t1, Square Wave Pulse Duration(s) MTP9435BDYAQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : 2012.03.26 Page No. : 6/8 Reel Dimension Carrier Tape Dimension MTP9435BDYAQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : 2012.03.26 Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTP9435BDYAQ8 CYStek Product Specification Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : 2012.03.26 Page No. : 8/8 CYStech Electronics Corp. SOP-8 Dimension Right side View G Top View A I C B Marking: Device Name Date Code H 9435BDYSC □□□□ J E D K Front View Part A Part A M L 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 N O F *: Typical Inches Min. Max. 0.1890 0.2007 0.1496 0.1654 0.2283 0.2441 0.0480 0.0519 0.0138 0.0193 0.1472 0.1527 0.0531 0.0689 0.1889 0.2007 DIM A B C D E F G H Millimeters Min. Max. 4.80 5.10 3.80 4.20 5.80 6.20 1.22 1.32 0.35 0.49 3.74 3.88 1.35 1.75 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0098 REF 0.0118 0.0354 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.25 REF 0.30 0.90 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP9435BDYAQ8 CYStek Product Specification