SEMICONDUCTOR MPS8550SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE ·Complementary to MPS8050SC. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V IC -1,200 mA PC * 350 mW Tj 150 ℃ Tstg -55～150 ℃ Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10×8×0.6㎜) ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=-0.1mA, IE=0 -40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -25 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-0.1mA, IC=0 -5 - - V Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -0.1 uA Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - 0.1 uA DC Current Gain hFE VCE=-1V, IC=-100mA 200 - 300 Collector-Emitter Saturation Voltage VCE(sat) IC=-800mA, IB=-80mA - - -0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=-800mA, IB=-80mA - - -1.2 V 150 - - MHz fT Transition Frequency 2015. 5. 12 Revision No : 0 VCE=-6V, IC=-20mA, f=30MHz 1/2 MPS8550SC 2015. 5. 12 Revision No : 0 2/2