Spec. No. : C622S3 Issued Date : 2013.06.05 Revised Date : Page No. : 1/7 CYStech Electronics Corp. Microwave Low Noise Amplifier NPN Silicon Epitaxial Planar Transistor BTC4226S3 Description • The BTC4226S3 is a NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. • Low Cre. Typ. Cob=0.7pF • Pb-free and halogen-free package Symbol Outline SOT-323 BTC4226S3 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range BTC4226S3 Symbol Limits Unit VCBO VCEO VEBO IC Pd RθJA Tj Tstg 20 12 3 100 150 833 -55~+150 -65~+150 V V V mA mW °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C622S3 Issued Date : 2013.06.05 Revised Date : Page No. : 2/7 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(ON) *hFE |S21e|² fT Cre Min. 20 12 3 0.7 70 7 3 - Typ. 0.82 9 4.5 0.7 Max. 100 100 150 1.2 0.95 250 1.5 Unit V V V nA nA mV V V dB GHz pF Test Conditions IC=100μA IC=1mA IE=10μA VCB=20V VEB=2V IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=3V, IC=10mA VCE=3V, IC=7mA VCE=3V, IC=7mA, f=1GHz VCE=3V, IC=7mA, f=1GHz VCE=3V, IE=0mA, f=1MHz *Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% Classification Of hFE Rank R24 R25 Range 70~140 125~250 Ordering Information Device HFE Rank Package Shipping BTC4226S3-4-T1-G R24 SOT-323 (Pb-free and halogen-free package) 3000 pcs / Tape & Reel BTC4226S3-5-T1-G R25 SOT-323 (Pb-free and halogen-free package) 3000 pcs / Tape & Reel BTC4226S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C622S3 Issued Date : 2013.06.05 Revised Date : Page No. : 3/7 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.35 0.14 1mA 0.3 IC, Collector Current(A) IC, Collector Current(A) 0.12 0.1 0.08 500uA 400uA 300uA 0.06 0.04 200uA 0.02 5mA 0.25 2.5mA 2mA 0.2 1.5mA 0.15 0.1 IB=500uA 0.05 IB=100uA 0 0 0 1 2 3 4 5 VCE, Collector-to-Emitter Voltage(V) 6 0 1 2 3 4 5 VCE, Collector-to-Emitter Voltage(V) Current Gain vs Collector Current Current Gain vs Collector Current 1000 1000 VCE=2V Current Gain---HFE Current Gain---HFE VCE=1V 100 Ta=125°C Ta= 75°C Ta= 25°C Ta=0°C Ta=-40°C 1 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 10 10 IC, Collector Current(mA) 1 100 10 IC, Collector Current(mA) 100 Current Gain vs Collector Current Current Gain vs Collector Current 1000 1000 VCE=10V Current Gain---HFE VCE=5V Current Gain---HFE 6 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 1 BTC4226S3 10 IC, Collector Current(mA) 100 1 10 IC, Collector Current(mA) 100 CYStek Product Specification Spec. No. : C622S3 Issued Date : 2013.06.05 Revised Date : Page No. : 4/7 CYStech Electronics Corp. Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCESAT@IC=10IB Saturation Voltage---(mV) Saturation Voltage---(mV) VCESAT@IC=5IB 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 1 10 IC, Collector Current(mA) 100 1 10000 10000 VBESAT@IC=10IB Saturation Voltage---(mV) VBESAT@IC=5IB 1000 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C 100 1000 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C 100 1 10 IC, Collector CurrentmA) 100 1 10 IC, Collector CurrentmA) 100 Power Derating Curve Capacitance vs Reverse-biased Voltage 200 Power Dissipation---PD(mW) 10 Cib Capacitance---(pF) 100 Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current Saturation Voltage---(mV) 10 IC, Collector Current(mA) 1 Cob 150 100 50 0 0.1 0.1 BTC4226S3 1 10 VR, Reverse-biased Voltage(V) 100 0 25 50 75 100 125 150 175 Ambient Temperature---TA(℃) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C622S3 Issued Date : 2013.06.05 Revised Date : Page No. : 5/7 Reel Dimension Carrier Tape Dimension BTC4226S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C622S3 Issued Date : 2013.06.05 Revised Date : Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTC4226S3 CYStek Product Specification Spec. No. : C622S3 Issued Date : 2013.06.05 Revised Date : Page No. : 7/7 CYStech Electronics Corp. SOT-323 Dimension Marking: 3 Q A1 1 Date Code C TE □□□ Lp 2 XX A detail Z bp e1 W B e E D A □□□ : Z HFE Rank Marking Code R24 R24 R25 R25 θ He 0 v A 2 mm 1 scale 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 Style: Pin 1.Base 2.Emitter 3.Collector *: Typical Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - DIM A A1 bp C D E e Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - DIM e1 He Lp Q v w θ Inches Min. Max. 0.0256 0.0787 0.0886 0.0059 0.0177 0.0051 0.0091 0.0079 0.0079 - Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4226S3 CYStek Product Specification