CYStech Electronics Corp. Spec. No. : C060J3 Issued Date : 2018.05.11 Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTN6N70J3 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C RDS(ON)@VGS=10V, ID=3A 700V 6A 3.8A 1.17Ω(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free Lead Plating and Halogen-free Package Applications Open Framed Power Supply Adapter STB Symbol Outline TO-252(DPAK) MTN6N70J3 G G：Gate D：Drain D S S：Source Ordering Information Device MTN6N70J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTN6N70J3 CYStek Product Specification Spec. No. : C060J3 Issued Date : 2018.05.11 Revised Date : Page No. : 2/11 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100C Pulsed Drain Current @ VGS=10V (Note 1) Avalanche Current (Note 1) Single Pulse Avalanche Energy @L=5mH, IAS=6A, VDD=50V Repetitive Avalanche Energy (Note 1) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature VDS VGS IDM IAS EAS EAR 700 ±30 6* 3.8* 24* 6 90 11 TL 300 C PD 114 0.91 -55~+150 W W/C C ID Tj, Tstg Unit V A mJ *Drain current limited by maximum junction temperature *100% UIS testing in condition of VDD=50V, L=7mH, VG=10V, IL=1.6A, Rated VDS=700V Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC (Note 1) (Note 2) RθJA Value 1.1 50 110 Unit C/W 1. When the device is mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. 2. When the device is mounted on the minimum pad size recommended (PCB mount) with TA=25°C. MTN6N70J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C060J3 Issued Date : 2018.05.11 Revised Date : Page No. : 3/11 Characteristics (TC=25C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS Min. Typ. Max. Unit Test Conditions 700 2.0 - 0.8 8.6 1.17 4.0 ±100 1 10 1.52 V V/C V S nA Ω VGS=0V, ID=250μA, Tj=25℃ Reference to 25C, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=3A VGS=±30V, VDS=0V VDS =700V, VGS =0V VDS =580V, VGS =0V, Tj=125C VGS =10V, ID=3A 28.9 5.3 9.9 15.2 8.4 41.4 10.4 1254 50 5.3 - nC ID=3A, VDD=560V, VGS=10V ns VDD=350V, ID=3A, VGS=10V, RG=1Ω pF VGS=0V, VDS=100V, f=1MHz 0.92 380 2.55 6 24 1.3 - *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - μA A V ns μC IS=6A, VGS=0V VGS=0V, IF=6A, dIF/dt=100A/μs *Pulse Test : Pulse Width 300μs, Duty Cycle2% Recommended soldering footprint MTN6N70J3 CYStek Product Specification Spec. No. : C060J3 Issued Date : 2018.05.11 Revised Date : Page No. : 4/11 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V 9V 8V 7V 6V 5V ID, Drain Current(A) 14 12 10 BVDSS, Normalized Drain-Source Breakdown Voltage 16 4.5V 8 6 4 VGS=4V 1.2 1.0 0.8 ID=250μA, VGS=0V 2 0.6 0 0 10 20 30 VDS, Drain-Source Voltage(V) 40 -75 50 -50 -25 Drain Current vs Gate-Source Voltage Static Drain-Source On-State resistance vs Drain Current 16 VGS=10V 1.6 1.2 0.8 0.4 VDS=30V Ta=25°C 14 ID, Drain Current(A) R DS(ON), Static Drain-Source OnState Resistance(Ω) 2.0 12 10 8 VDS=10V 6 4 2 0 0.0 0.01 0.1 1 ID, Drain Current(A) 0 10 100 5 10 IF, Forward Current(A) 6 4 3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 VGS=0V 1 Ta=150°C Ta=25°C 0.1 0.01 ID=3A 1 2 Forward Drain Current vs Source-Drain Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage RDS(ON), Static Drain-Source On-State Resistance(Ω) 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) Ta=25°C 0.001 0 0 2 4 6 VGS, Gate-Source Voltage(V) MTN6N70J3 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, Source Drain Voltage(V) CYStek Product Specification Spec. No. : C060J3 Issued Date : 2018.05.11 Revised Date : Page No. : 5/11 CYStech Electronics Corp. Typical Characteristics(Cont.) Capacitance vs Reverse Voltage Static Drain-Source On-resistance vs Ambient Temperature 10000 RDS(ON), Normalized Static Drain-Source On-state Resistance 3.0 Ciss Capacitance(pF) 1000 100 Coss 10 Crss f=1MHz 1 ID=3A, VGS=10V 2.5 2.0 1.5 1.0 0.5 RDSON@Tj=25°C : 1.2Ωtyp. 0.0 0 10 20 30 40 50 60 70 80 VDS, Drain-to-Source Voltage(V) 90 100 -75 -50 -25 Gate Charge Characteristics Maximum Safe Operating Area 100 10 RDS(ON) Limited 10 VDS=140V 10μs VGS, Gate-Source Voltage(V) ID, Drain Current(A) 100μs 1ms 10ms 1 100ms DC TC=25°C, Tj(max)=150°C VGS=10V, RθJC=1.1°C/W Single pulse 0.1 VDS=350V 8 6 VDS=560V 4 2 ID=3A 0 0.01 1 10 100 0 1000 6 12 18 24 30 VDS, Drain-Source Voltage(V) Qg, Total Gate Charge(nC) Maximum Drain Current vs Case Temperature Threshold Voltage vs Junction Tempearture 7 36 VG S(th), Normalized Threshold Voltage 1.4 6 ID, Maximum Drain Current(A) 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) 5 4 3 2 1 VGS=10V, RθJC=1.1°C/W 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 0 25 50 75 100 125 TC, Case Temperature(°C) MTN6N70J3 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C060J3 Issued Date : 2018.05.11 Revised Date : Page No. : 6/11 Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current Single Pulse Power Rating, Junction to Case 100 GFS, Forward Transfer Admittance(S) 3000 2700 TJ(MAX) =150°C TC=25°C RθJC=1.1°C/W 2400 Power (W) 2100 1800 1500 1200 900 600 300 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 10 1 VDS=10V 0.1 0.01 0.001 Ta=25°C Pulsed 0.01 0.1 1 ID, Drain Current(A) 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.1°C/W 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-04 MTN6N70J3 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C060J3 Issued Date : 2018.05.11 Revised Date : Page No. : 7/11 Test Circuits and Waveforms MTN6N70J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C060J3 Issued Date : 2018.05.11 Revised Date : Page No. : 8/11 Test Circuits and Waveforms(Cont.) MTN6N70J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C060J3 Issued Date : 2018.05.11 Revised Date : Page No. : 9/11 Reel Dimension Carrier Tape Dimension MTN6N70J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C060J3 Issued Date : 2018.05.11 Revised Date : Page No. : 10/11 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Pb-free Assembly Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3C/second max. 3C/second max. (Tsmax to Tp) Preheat 100C 150C −Temperature Min(TS min) −Temperature Max(TS max) 150C 200C −Time(ts min to ts max) 60-120 seconds 60-180 seconds Time maintained above: −Temperature (TL) 183C 217C − Time (tL) 60-150 seconds 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25 C to peak temperature Note : All temperatures refer to topside of the package, measured on the package body surface. MTN6N70J3 CYStek Product Specification Spec. No. : C060J3 Issued Date : 2018.05.11 Revised Date : Page No. : 11/11 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name CYS 6N70 □□□□ Date Code 1 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.008 0.038 0.046 0.027 0.035 0.205 0.217 0.017 0.025 0.235 0.245 0.209 REF 0.252 0.268 0.182 - DIM A A1 A2 b b3 c D D1 E E1 Millimeters Min. Max. 2.200 2.400 0.000 0.200 0.970 1.170 0.680 0.900 5.200 5.500 0.430 0.630 5.980 6.220 5.300 REF 6.400 6.800 4.630 - DIM e H L L1 L2 L3 L4 L5 θ Inches Min. Max. 0.090 BSC 0.370 0.413 0.054 0.069 0.114 REF 0.020 BSC 0.035 0.050 0.039 0.065 0.077 0° 8° Millimeters Min. Max. 2.286 BSC 9.400 10.500 1.380 1.750 2.900 REF 0.510 BSC 0.880 1.280 1.000 1.650 1.950 0° 8° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead : Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN6N70J3 CYStek Product Specification