IPA80R450P7 MOSFET 800VCoolMOSªP7PowerTransistor PG-TO220FP Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfromInfineon’sover18years pioneeringsuperjunctiontechnologyinnovation. Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial gradeapplicationsaccordingtoJEDEC(J-STD20andJESD22) •Fullyoptimizedportfolio Benefits Drain Pin 2, Tab Gate Pin 1 •Best-in-classperformance •Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts •Easytodriveandtoparallel •BetterproductionyieldbyreducingESDrelatedfailures •Lessproductionissuesandreducedfieldreturns •Easytoselectrightpartsforfinetuningofdesigns Source Pin 3 Applications RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 800 V RDS(on),max 0.45 Ω Qg,typ 24 nC ID 11 A Eoss @ 500V 2.7 µJ VGS(th),typ 3 V ESD class (HBM) 2 - Type/OrderingCode Package IPA80R450P7 PG-TO 220 FullPAK Final Data Sheet Marking 80R450P7 1 RelatedLinks see Appendix A Rev.2.0,2016-07-05 800VCoolMOSªP7PowerTransistor IPA80R450P7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.0,2016-07-05 800VCoolMOSªP7PowerTransistor IPA80R450P7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 11 7.1 A TC=25°C TC=100°C - 29 A TC=25°C - - 29 mJ ID=1.8A; VDD=50V EAR - - 0.22 mJ ID=1.8A; VDD=50V Avalanche current, repetitive IAR - - 1.8 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0to400V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 29 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - Mounting torque - - - 50 Ncm M2.5 screw IS - - 5 A TC=25°C IS,pulse - - 29 A TC=25°C dv/dt - - 1 V/ns VDS=0to400V,ISD<=2.2A,Tj=25°C Maximum diode commutation speed dif/dt - - 50 A/µs VDS=0to400V,ISD<=2.2A,Tj=25°C Insulation withstand voltage VISO - - 2500 V Vrms,TC=25°C,t=1min Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) Diode pulse current 3) Reverse diode dv/dt 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 4.4 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - °C/W n.a. Soldering temperature, wavesoldering only allowed at leads - - 260 °C Tsold 1.6 mm (0.063 in.) from case for 10s 1) TO220 equivalent. Limited by Tj max. Maximum duty cycle D=0.5 Pulse width tp limited by Tj,max 3) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs 2) Final Data Sheet 3 Rev.2.0,2016-07-05 800VCoolMOSªP7PowerTransistor IPA80R450P7 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.5 V VDS=VGS,ID=0.22mA - 10 1 - µA VDS=800V,VGS=0V,Tj=25°C VDS=800V,VGS=0V,Tj=150°C - - 1 µA VGS=20V,VDS=0V Min. Typ. Max. V(BR)DSS 800 - Gate threshold voltage VGS(th) 2.5 Zero gate voltage drain current IDSS Gate-source leakage curent incl. zener IGSS diode Drain-source on-state resistance RDS(on) - 0.38 0.99 0.45 - Ω VGS=10V,ID=4.5A,Tj=25°C VGS=10V,ID=4.5A,Tj=150°C Gate resistance RG - 1 - Ω f=250kHz,opendrain Unit Note/TestCondition Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 770 - pF VGS=0V,VDS=500V,f=250kHz Output capacitance Coss - 14 - pF VGS=0V,VDS=500V,f=250kHz Effective output capacitance, energy related1) Co(er) - 24 - pF VGS=0V,VDS=0to500V Effective output capacitance, time related2) Co(tr) - 305 - pF ID=constant,VGS=0V,VDS=0to500V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=4.5A, RG=7.5Ω Rise time tr - 6 - ns VDD=400V,VGS=13V,ID=4.5A, RG=7.5Ω Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=4.5A, RG=7.5Ω Fall time tf - 10 - ns VDD=400V,VGS=13V,ID=4.5A, RG=7.5Ω Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 4 - nC VDD=640V,ID=4.5A,VGS=0to10V Gate to drain charge Qgd - 9 - nC VDD=640V,ID=4.5A,VGS=0to10V Gate charge total Qg - 24 - nC VDD=640V,ID=4.5A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=640V,ID=4.5A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V 2) Final Data Sheet 4 Rev.2.0,2016-07-05 800VCoolMOSªP7PowerTransistor IPA80R450P7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=4.5A,Tf=25°C 1000 - ns VR=400V,IF=2.2A,diF/dt=50A/µs - 11 - µC VR=400V,IF=2.2A,diF/dt=50A/µs - 17 - A VR=400V,IF=2.2A,diF/dt=50A/µs Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.0,2016-07-05 800VCoolMOSªP7PowerTransistor IPA80R450P7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 35 10 µs 100 µs 30 101 10 ms 25 DC 100 20 ID[A] Ptot[W] 1 µs 1 ms 15 10-1 10 10-2 5 0 0 25 50 75 100 125 10-3 150 100 101 102 TC[°C] 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 100 µs 10 µs 1 µs 1 ms 101 0.5 10 ms 100 DC 0.2 0.1 ID[A] ZthJC[K/W] 100 10-1 0.05 0.02 0.01 10-1 single pulse 10-2 10-3 100 101 102 103 10-2 10-5 10-4 10-3 VDS[V] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-2 10-1 100 tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.0,2016-07-05 800VCoolMOSªP7PowerTransistor IPA80R450P7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 35 25 20 V 30 10 V 8V 7V 20 V 10 V 8V 7V 20 6V 6V 25 15 20 5.5 V ID[A] ID[A] 5.5 V 15 5V 10 5V 4.5 V 10 5 4.5 V 5 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 2.0 1.10 5V 5.5 V 6V 1.8 6.5 V 7V 1.6 0.90 10 V 1.4 0.70 RDS(on)[Ω] RDS(on)[Ω] 20 VDS[V] 1.2 1.0 98% typ 0.50 0.8 0.30 0.6 0.4 0 10 20 30 0.10 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=4.5A;VGS=10V 7 Rev.2.0,2016-07-05 800VCoolMOSªP7PowerTransistor IPA80R450P7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 35 10 9 30 25 °C 8 25 7 120 V 6 ID[A] VGS[V] 20 15 150 °C 640 V 5 4 3 10 2 5 1 0 0 2 4 6 8 10 0 12 0 5 VGS[V] 10 15 20 25 125 150 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=4.5Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 30 25 °C 125 °C 25 101 IF[A] EAS[mJ] 20 100 15 10 5 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=1.8A;VDD=50V 8 Rev.2.0,2016-07-05 800VCoolMOSªP7PowerTransistor IPA80R450P7 Diagram14:Typ.capacitances 950 104 900 103 850 102 Ciss C[pF] VBR(DSS)[V] Diagram13:Drain-sourcebreakdownvoltage Coss 1 800 10 750 100 Crss 700 -75 -50 -25 0 25 50 75 100 125 150 175 10-1 0 100 200 Tj[°C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 6 5 Eoss[µJ] 4 3 2 1 0 0 100 200 300 400 500 600 700 800 VDS[V] Eoss=f(VDS) Final Data Sheet 9 Rev.2.0,2016-07-05 800VCoolMOSªP7PowerTransistor IPA80R450P7 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt IF QF IF dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 t 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.0,2016-07-05 800VCoolMOSªP7PowerTransistor IPA80R450P7 6PackageOutlines DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. DIM A A1 A2 b b1 b2 b3 b4 c D D1 E e e1 N H L L1 Q MILLIMETERS MIN MAX 4.50 4.90 2.34 2.85 2.42 2.86 0.65 0.90 0.95 1.38 0.95 1.51 0.65 1.38 0.65 1.51 0.40 0.63 15.67 16.15 8.97 9.83 10.00 10.65 2.54 (BSC) INCHES MIN 0.177 0.092 0.095 0.026 0.037 0.037 0.026 0.026 0.016 0.617 0.353 0.394 DOCUMENT NO. Z8B00003319 SCALE 0 2.5 0 2.5 5mm EUROPEAN PROJECTION 0.100 (BSC) 5.08 3 28.70 12.78 2.83 2.95 3.15 MAX 0.193 0.112 0.113 0.035 0.054 0.059 0.054 0.059 0.025 0.636 0.387 0.419 0.200 3 29.75 13.75 3.45 3.38 3.50 1.130 0.503 0.111 0.116 0.124 1.171 0.541 0.136 0.133 0.138 ISSUE DATE 18-03-2016 REVISION 06 Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches Final Data Sheet 11 Rev.2.0,2016-07-05 800VCoolMOSªP7PowerTransistor IPA80R450P7 7AppendixA Table11RelatedLinks • IFXCoolMOSWebpage:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 12 Rev.2.0,2016-07-05 800VCoolMOSªP7PowerTransistor IPA80R450P7 RevisionHistory IPA80R450P7 Revision:2016-07-05,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-07-05 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.0,2016-07-05