MGCHIP MDS1903URH Single n-channel trench mosfet 100v, 3.3a, 110m(ohm) Datasheet

Single N-channel Trench MOSFET 100V, 3.3A, 110mΩ
ㄹ
Features
General Description



The MDS1903 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDS1903 is suitable device for DC to DC
converter and general purpose applications.
6(D)
7(D)
8(D)
VDS = 100V
ID = 3.3A @VGS = 10V
RDS(ON) (MAX)
< 110mΩ @VGS = 10V
< 120mΩ @VGS = 6.0V
D
5(D)
2(S)
G
4(G)
3(S)
1(S)
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Symbol
Rating
Unit
VDSS
100
V
VGSS
±20
V
o
TA=25 C
Continuous Drain Current (1)
o
TA=70 C
Pulsed Drain Current
3.3
ID
IDM
TA=25oC
Power Dissipation
TA=70oC
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
A
2.6
12
A
2.5
PD
W
1.6
EAS
21
TJ, Tstg
-55~150
Symbol
Rating
RθJA
50
RθJC
25
mJ
o
C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
(1)
Thermal Resistance, Junction-to-Case
Jun 2011 Version 1.0
1
Unit
o
C/W
MagnaChip Semiconductor Ltd.
MDS1903 – Single N-Channel Trench MOSFET 100V
MDS1903
Part Number
Temp. Range
MDS1903URH
o
-55~150 C
Package
Packing
Rohs Status
SOIC-8
Tape & Reel
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
100
-
-
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
1.0
2.0
3.0
Drain Cut-Off Current
IDSS
VDS = 80V, VGS = 0V
-
-
1
Gate Leakage Current
IGSS
VGS = ±20V, VDS = 0V
-
-
±0.1
VGS = 10V, ID = 3A
-
90
110
VGS = 6.0V, ID = 3A
-
100
120
VDS = 10V, ID = 3A
-
10
-
-
8.8
-
-
1.3
-
-
2.1
-
-
475
800
Drain-Source ON Resistance
Forward Transconductance
RDS(ON)
gfs
V
μA
mΩ
S
Dynamic Characteristics
Total Gate Charge
Qg(10V)
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
VDS = 50.0V, ID = 3A,
VGS = 10V
VDS = 25.0V, VGS = 0V,
f = 1.0MHz
nC
Reverse Transfer Capacitance
Crss
-
20
-
Output Capacitance
Coss
-
60
-
Turn-On Delay Time
td(on)
-
6.2
-
-
7.1
-
-
17.3
-
-
6.1
-
-
0.75
1.2
V
-
32.0
-
ns
-
48.5
-
nC
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VGS = 10V, VDS = 50V,
ID = 3A , RG = 3.0Ω
tf
pF
ns
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
IS = 3A, VGS = 0V
IF = 3A, dl/dt = 100A/μs
Note :
1.
2.
Surface mounted FR-4 board by JEDEC (jesd51-7)
EAS is tested at starting Tj = 25℃ , L = 1.0mH, IAS = 6.5A, VDD = 50V, VGS = 10V
Jun 2011 Version 1.0
2
MagnaChip Semiconductor Ltd.
MDS1903 – Single N-Channel Trench MOSFET 100V
Ordering Information
VGS = 10V
25
ID, Drain Current [A]
Drain-Source On-Resistance [mΩ]
150
8.0V
20
5.0V
4.5V
15
4.0V
10
3.5V
5
140
130
120
VGS = 6.0V
110
100
VGS = 10V
90
80
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
70
5.0
0
5
10
VDS, Drain-Source Voltage [V]
20
25
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
200
2.4
※ Notes :
※ Notes :
2.2
ID = 3.0A
1. VGS = 10 V
2. ID = 3.0 A
2.0
RDS(ON) [mΩ ],
Drain-Source On-Resistance
RDS(ON), (Normalized)
Drain-Source On-Resistance
15
ID, Drain Current [A]
1.8
1.6
1.4
1.2
1.0
0.8
0.6
175
150
125
TJ = 25
℃
100
75
0.4
0.2
-50
50
-25
0
25
50
75
100
125
2
150
3
4
5
6
7
8
9
10
VGS, Gate to Source Volatge [V]
o
TJ, Junction Temperature [ C]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
25
※ Notes :
※ Notes :
VGS = 0V
IDR, Reverse Drain Current [A]
VDS = 10V
ID, Drain Current [A]
20
15
TJ=25
℃
10
5
0
0
1
2
3
4
5
6
7
TJ=25
℃
0
10
0.3
8
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
VSD, Source-Drain voltage [V]
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
Jun 2011 Version 1.0
1
10
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
MagnaChip Semiconductor Ltd.
MDS1903 – Single N-Channel Trench MOSFET 100V
30
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Note : ID = 3.0A
VDS = 50V
VGS, Gate-Source Voltage [V]
8
Capacitance [pF]
600
6
4
Ciss
400
※ Notes ;
200
1. VGS = 0 V
2. f = 1 MHz
Coss
2
Crss
0
0
0
2
4
6
8
0
10
5
2
10
1
10ms
0
100ms
1s
-1
30
1
℃
-2
10
-1
2
10s
100s
DC
Single Pulse
TJ=Max rated
TA=25
10
25
3
Operation in This Area
is Limited by R DS(on)
10
20
4
1ms
10
15
Fig.8 Capacitance Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
Fig.7 Gate Charge Characteristics
10
10
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
10
0
10
1
10
0
25
2
VDS, Drain-Source Voltage [V]
50
75
100
125
150
TA, Ambient Temperature [ ]
℃
Fig.10 Maximum Drain Current vs.
Ambient Temperature
Fig.9 Maximum Safe Operating Area
2
10
0.2
1
10
0.1
0.05
0.02
0
10
0.01
Zθ
JC
, Thermal Response
D=0.5
single pulse
-1
10
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
-2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
Jun 2011 Version 1.0
4
MagnaChip Semiconductor Ltd.
MDS1903 – Single N-Channel Trench MOSFET 100V
800
10
MDS1903 – Single N-Channel Trench MOSFET 100V
Package Dimension
8 Leads, SOIC
Dimensions are in millimeters, unless otherwise specified
Symbol
Min
Nom
Max
A
-
-
1.75
A(1)
0.10
-
0.25
B
0.31
-
0.51
C
0.10
-
0.25
D
4.9 BSC
E
3.9 BSC
e
1.27 BSC
H
6.0 BSC
L
0.40
-
1.27
a
0
-
8
h
0.250
-
0.500
L2(Gage plane)
Jun 2011 Version 1.0
0.25 BSC
5
MagnaChip Semiconductor Ltd.
MDS1903 – Single N-Channel Trench MOSFET 100V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Jun 2011 Version 1.0
6
MagnaChip Semiconductor Ltd.
Similar pages