POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6445141 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST SWITCHING THYRISTOR ATF585 FINAL SPECIFICATION Repetitive voltage up to Mean on-state current Surge current Turn-off time 800 445 6 15 V A kA µs mag 06 - ISSUE : 04 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 800 V V RSM Non-repetitive peak reverse voltage 125 900 V V DRM Repetitive peak off-state voltage 125 800 V I RRM Repetitive peak reverse current V=VRRM 125 40 mA I DRM Repetitive peak off-state current V=VDRM 125 40 mA I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, double side cooled 445 A I T (AV) Mean on-state current 180° sin, 1 kHz, Th=55°C, double side cooled 400 A I TSM Surge on-state current, non repetitive sine wave, 10 ms I² t without reverse voltage T On-state voltage On-state current = 25 1,7 T(TO) Threshold voltage 125 1,30 V T On-state slope resistance 125 0,325 mohm CONDUCTING I² t V V r 125 6 180 x1E3 800 A kA A²s V SWITCHING di/dt Critical rate of rise of on-state current, min From 75% VDRM up to 1200 A, gate 20V 10 ohm 125 200 A/µs dv/dt Critical rate of rise of off-state voltage, min Linear ramp up to 70% of VDRM 125 500 V/µs td Gate controlled delay time, typical VD=100V, gate source 20V, 10 ohm , tr=1 µs 25 0,6 µs tq Circuit commutated turn-off time 125 15 µs di/dt = dV/dt = Q rr Reverse recovery charge 20 A/µs, I= 1000 I = 250 A 200 V/µs , up to 75% di/dt = 60 A/µs, I= 1000 I = 1000 A VR = 50 V A VDRM A 125 140 µC 104 A 25 75 mA 25 150 mA 3,5 V 25 350 mA 125 0,25 V 25 25 V 25 8 A 25 5 V 25 100 W 25 1 W 95 °C/kW I rr Peak reverse recovery current I H Holding current, typical VD=5V, gate open circuit I L Latching current, typical VD=12V, tp=30µs GT Gate trigger voltage VD=5V 25 I GT Gate trigger current VD=5V V GD Non-trigger gate voltage, min. VD=VDRM V FGM Peak gate voltage (forward) I FGM Peak gate current V RGM Peak gate voltage (reverse) P GM Peak gate power dissipation P G(AV) Average gate power dissipation GATE V Pulse width 100 µs MOUNTING R T F th(j-h) j Thermal impedance, DC Junction to heatsink, double side cooled Operating junction temperature -30 / 125 °C Mounting force 4.5 / 5.0 kN Mass 55 tq code ORDERING INFORMATION : ATF585 S 08 B tq code standard specification VDRM&VRRM/100 D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs T 60 µs U 70 µs W 80 µs X 100µs Y 150µs g ATF585 FAST SWITCHING THYRISTOR POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FINAL SPECIFICATION mag 06 - ISSUE : 04 SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARGE Tj = 125 °C 400 350 1000 A 300 250 A Qrr [µC] 250 200 100 A 150 100 50 0 0 50 100 150 200 250 300 350 400 di/dt [A/µs] REVERSE RECOVERY CURRENT Tj = 125 °C 500 400 1000 A 300 Irr [A] 100 A 200 100 0 0 50 100 150 200 250 300 350 400 di/dt [A/µs] ta = Irr / (di/dt) tb = trr - ta di/dt IF ta Softness (s factor) s = tb / ta Irr Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) tb Vr ATF585 FAST SWITCHING THYRISTOR FINAL SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation mag 06 - ISSUE : 04 ON-STATE CHARACTERISTIC Tj = 125 °C SURGE CHARACTERISTIC Tj = 125 °C 1600 7 1400 6 5 1000 ITSM [kA] On-state Current [A] 1200 800 600 4 3 2 400 1 200 0 0 0,6 1,1 1,6 2,1 2,6 1 10 On-state Voltage [V] n° cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 100 90 80 Zth j-h [°C/kW] 70 60 50 40 30 20 10 0 0,001 0,01 0,1 1 10 100 t[s] Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 100