Spec. No. : C714J3 Issued Date : 2017.02.06 Revised Date : Page No. : 1/9 CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET MTB095N10KRJ3 100V BVDSS ID@VGS=10V, TC=25°C Features RDSON@VGS=10V, ID=8A 10.9A 98mΩ(TYP) RDSON@VGS=4.5V, ID=6A 128mΩ(TYP) • Low Gate Charge • Simple Drive Requirement • ESD protected gate • Pb-free lead plating & Halogen-free package Equivalent Circuit Outline TO-252(DPAK) MTB095N10KRJ3 G D S G：Gate D：Drain S：Source Ordering Information Device MTB095N10KRJ3-0-T3-G Package TO-252 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB095N10KRJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C714J3 Issued Date : 2017.02.06 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current Avalanche Current @ L=0.1mH Avalanche Energy @ L=1mH, ID=7A, VDD=50V Repetitive Avalanche Energy @ L=0.05mH Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol Limits VDS VGS 100 ±20 10.9 6.9 20 10.9 24.5 3 30 12 -55~+150 ID *1 *3 *2 IDM IAS EAS EAR PD Tj, Tstg Unit V A mJ W °C *2. Duty cycle ≤ 1% *3. 100% tested by L=0.1mH, IAS=8A, VGS=10V, VDD=25V Thermal Data Parameter Thermal Resistance, Junction-to-case, max Symbol RθJC Thermal Resistance, Junction-to-ambient, max RθJA Value 4.1 50 (Note) 110 Unit °C/W Note : When the device is mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user’s specific board design. Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) *1 GFS *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 MTB095N10KRJ3 Min. Typ. Max. 100 1 - 98 128 4.9 2.5 ±10 1 25 130 180 - - 6.4 1.4 1.8 - Unit V μA mΩ S nC Test Conditions VGS=0V, ID=250μA VDS =VGS, ID=250μA VGS=±16V, VDS=0V VDS =80V, VGS =0V VDS =80V, VGS =0V, TJ=125°C VGS =10V, ID=8A VGS =4.5V, ID=6A VDS =10V, ID=5A ID=8A, VDS=80V, VGS=10V CYStek Product Specification CYStech Electronics Corp. td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 5.4 15.8 15 5 277 34 8 6.6 - - 0.97 21.7 18.8 10.9 20 1.3 - Spec. No. : C714J3 Issued Date : 2017.02.06 Revised Date : Page No. : 3/9 ns VDS=50V, ID=8A, VGS=10V, RG=1Ω pF VGS=0V, VDS=50V, f=1MHz Ω f=1MHz A V ns nC IS=8A, VGS=0V IF=8A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTB095N10KRJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C714J3 Issued Date : 2017.02.06 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics ID, Drain Current(A) 10V 9V 8V 7V 6V 15 BVDSS, Normalized Drain-Source Breakdown Voltage 1.4 20 5V 4V 10 3.5 V 5 1.2 1 0.8 0.6 ID=250μA, VGS=0V VGS=3V 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 Tj=25°C VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1000 VGS=4.5V 100 VGS=10V 10 1 0.8 Tj=150°C 0.6 0.4 0.2 0.01 0.1 1 10 ID, Drain Current(A) 0 100 R DS(ON) , Normalized Static DrainSource On-State Resistance ID=8A 400 8 12 16 IDR , Reverse Drain Current(A) 20 2.4 500 450 4 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 350 300 250 200 150 100 2 VGS=10V, ID=8A 1.6 1.2 0.8 RDS(ON) @Tj=25°C : 98mΩ 0.4 50 0 MTB095N10KRJ3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C714J3 Issued Date : 2017.02.06 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) NormalizedThreshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss 100 C oss 10 Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 1 0 10 20 30 40 VDS, Drain-Source Voltage(V) -75 -50 -25 50 50 75 100 125 150 175 Gate Charge Characteristics 10 GFS , Forward Transfer Admittance(S) 25 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 VGS, Gate-Source Voltage(V) VDS=50V 1 0.1 VDS=10V Pulsed Ta=25°C 0.01 0.001 8 VDS=20V 6 VDS=80V 4 2 ID=8A 0 0.01 0.1 1 ID, Drain Current(A) 0 10 1 2 3 4 5 6 Total Gate Charge---Qg(nC) 7 8 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 14 RDS(ON) Limited 10 ID, Maximum Drain Current(A) 100 ID, Drain Current(A) 0 10 μs 100μs 1ms 10ms 1 TC=25°C, Tj=150°, VGS=10V RθJC=4.1°C/W, Single Pulse 100ms DC 12 10 8 6 4 VGS=10V, RθJC=4.1°C/W 2 0 0.1 0.1 MTB095N10KRJ3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C714J3 Issued Date : 2017.02.06 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Power Rating, Junction to Case 1000 20 18 16 800 14 700 Power (W) ID, Drain Current (A) 900 VDS=10V 12 10 8 600 500 400 6 300 4 200 2 100 0 0.0001 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) TJ(MAX) =150°C TC=25°C RθJC=4.1°C/W 10 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves r (t), Normalized Effective Transient Thermal Resistance 1 D=0.5 0.2 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC(t)=4.1 °C/W max. 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTB095N10KRJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C714J3 Issued Date : 2017.02.06 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB095N10KRJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C714J3 Issued Date : 2017.02.06 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB095N10KRJ3 CYStek Product Specification Spec. No. : C714J3 Issued Date : 2017.02.06 Revised Date : Page No. : 9/9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name B095N 10KR Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB095N10KRJ3 CYStek Product Specification