FMM23N20 2.3A 20V N-Channel Enhancement-Mode MOSFET 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), [email protected], [email protected] = 60mΩ RDS(ON), [email protected], [email protected] = 115mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM TO-236 (SOT-23) Internal Schematic Diagram Drain Gate Source N-Channel MOSFET Top View Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS Limit 20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID 2.3 Pulsed Drain Current 1) IDM 10 TA = 25oC TA = 75oC Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse ID=50A, VDD=25V, L=0.5mH Junction-to-Case Thermal Resistance Maximum Power Dissipation Junction-to-Ambient Thermal Resistance (PCB mounted) 2) PD TJ, Tstg Unit V A 0.9 0.57 -55 to 150 W o C mJ EAS RθJC RθJA o 145 C/W Note: 1. Maximum DC current limited by the package 2 2. 1-in 2oz Cu PCB board Feb '06 Rev 1 1 FMM23N20 2.3A 20V N-Channel Enhancement-Mode MOSFET N-Channel Enhancement-Mode MOSFET ELECTRICAL CHARACTERISTICS Parameter Static Drain-Source Breakdown Voltage Symbol Test Condition BVDSS VGS = 0V, ID = -10uA Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 2.8A 45 60 Drain-Source On-State Resistance RDS(on) VGS = 2.5V, ID = 2.0A 70 115 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA 0.95 1.20 Zero Gate Voltage Drain Current IDSS VDS = 9.6V, VGS = 0V -1 uA Gate Body Leakage Gate Resistance Forward Transconductance IGSS Rg gfs VGS = ±8V, VDS = 0V ±100 6.5 nA Ω S VDS = 6V, ID = 2.8A VGS = 4.5V 3.69 0.70 nC VDD = 6V, RL = 6Ω ΙD = 1Α, VGEN = 4.5V RG = 6Ω 6.16 Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Crss Diode Forward Voltage VSD VDS = 5V, ID = 4.0A VDS = 6V, VGS = 0V f = 1.0 MHz IS Min Typ Max Unit 20 - - V 0.65 mΩ V 1.06 7.56 16.61 ns 4.07 427.12 80.56 pF 57.00 A IS = -1.6A, VGS = 0V V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% Feb '06 Rev 1 2