Diodes DMP210DUFB4 P-channel mosfet Datasheet

DMP210DUFB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON)
-20V
5Ω @ VGS = -4.5V
7Ω @ VGS = -2.5V
10Ω @ VGS = -1.8V
15Ω @ VGS = -1.5V
Features and Benefits
ID
TA = +25°C
-200mA
-170mA
-140mA
-50mA
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.



P-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage VGS(TH)






Low Input Capacitance
Fast Switching Speed
Ultra-Small Surfaced Mount Package
Ultra-Low Package Profile, 0.4mm Maximum Package Height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability


Applications
Mechanical Data




DC-DC Converters
Power Management Functions
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (Approximate)




X2-DFN1006-3
D
G
S
D
G
ESD protected
Bottom View
Top View
Internal Schematic
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP210DUFB4-7
DMP210DUFB4-7B
Notes:
Case
X2-DFN1006-3
X2-DFN1006-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
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August 2015
© Diodes Incorporated
DMP210DUFB4
Marking Information
From date code 1527 (YYWW),
this changes to:
N1
N1
Top View
Bar Denotes Gate and Source Side
Top View
Dot Denotes Drain Side
N1
N1
N1
N1
N1
N1
DMP210DUFB4-7
N1
Top View
Bar Denotes Gate and Source Side
N1 = Part Marking Code
DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
N1
N1
N1
DMP210DUFB4-7B
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DMP210DUFB4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
Continuous Drain Current (Note 5) VGS = -1.8V
Steady
State
Pulsed Drain Current
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
-20
±10
-200
-160
ID
Units
V
V
mA
IDM
-140
-110
-600
Symbol
PD
RθJA
TJ, TSTG
Value
350
357
-55 to +150
ID
TP = 10µs
mA
mA
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics
Units
mW
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
-20






-100
-50
V
nA
nA
100
nA
µA
µA
VGS = 0V, ID = -250µA
VDS = -16V, VGS = 0V
VDS = -5.0V, VGS = 0V
VGS = 5.0V, VDS = 0V
VGS = 8.0V, VDS = 0V
VGS = 10.0V, VDS = 0V
V
VDS = VGS, ID = -250µA
V
VDS = VGS, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage
IGSS


VGS(th)
|Yfs|
VSD
-0.5
-0.55
-0.40
-0.35






-0.5








20
200

-1.0
-1.05
-0.90
-0.85
5
7
10
15


-1.2
mS
V
Ciss
Coss
Crss



13.72
4.01
2.34
175
30
20
pF
pF
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
td(on)
tr
td(off)
tf




7.7
19.3
25.9
31.5




nS
VGS = -4.5V, VDD = -15V
ID = -180mA, RG = 2.0Ω
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Gate Threshold Voltage (Note 7)
@TJ = +25°C
@TJ = 0°C
@TJ = +85°C
@TJ = +100°C
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
VGS(th)
RDS(ON)
1
10
Ω
VGS = -4.5V, ID = -100mA
VGS = -2.5V, ID = -50mA
VGS = -1.8V, ID = -20mA
VGS = -1.5V, ID = -10mA
VGS = -1.2V, ID = -1mA
VDS = -10V, ID = -200mA
VGS = 0V, IS = -115mA
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
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DMP210DUFB4
0.6
0.6
VGS = -4.5V
0.5
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
0.5
0.4
0.3
VGS= -2.5V
0.2
0.4
0.3
0.2
VGS = -1.8V
0.1
0.1
VGS = -1.5V
VGS= -1.2V
0.5
1
1.5
2
2.5
3
3.5
VDS, DRAIN-SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
VDS=5.0V
4
100
RDS(ON) () Ave @ VGS=1.5V
10
RDS(ON) () Ave @ VGS=1.8V
RDS(ON) () Ave @ VGS=2.5V
RDS(ON) () Ave @ VGS=4.5V
1
0.001
0.01
0.1
ID, DRAIN-SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
1.4
1.2
RDS(ON)( )
@VGS=2.5V, ID=50mA
1
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resisitance Variation with Temperature
Document number: DS35026 Rev. 11 - 2
VGS =4.5V
9
Ave RDS(ON) (R) @ 150C
8
7
Ave RDS(ON) (R) @ 125 C
6
5
4
Ave RDS(ON) (R) @ 85C
3
Ave RDS(ON) (R) @ 25 C
2
Ave RDS(ON) (R) @ -55C
1
0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Normalized)
RDS(ON)( )
@VGS=4.5V, ID=200mA
DMP210DUFB4
10
1
1.6
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Normalized)
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
0
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0.1
0.2
0.3
0.4
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
0.5
12
10
8
RDS(ON)()
@VGS=2.5V, ID=50mA
6
4
RDS(ON)()
@VGS=4.5V, ID=200mA
2
0
-50
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resisitance vs.Temperature
150
August 2015
© Diodes Incorporated
DMP210DUFB4
0.6
1.2
0.5
IS, SOURCE CURRENT (A)
VGS(th), GATE THRESHOLD VOLTAGE (V)
1.4
1.0
ID= 1mA
0.8
0.6
ID= 250 A
0.4
TA= 25C
0.4
0.3
0.2
0.1
0.2
0
-50
0
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10,000
100
TA = 150C
IDSS, LEAKAGE CURRENT (nA)
f = 1MHz
CT, JUNCTION CAPACITANCE (pF)
1.2
Ciss
10
Coss
1,000
100
TA = 85 C
10
TA = 25C
1
C rss
TA = -55 C
1
0
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
0.1
0
4
6
8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
20
2
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RJA(t) = r(t) * RJA
RJA = 369°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = 0.005
t2
TJ - TA = P * R JA(t)
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
t1
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
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100
1,000
August 2015
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DMP210DUFB4
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
X2-DFN1006-3
A
X2-DFN1006-3
Dim Min Max Typ
A
 0.40 
A1 0.00 0.05 0.03
b
0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.05 1.00
E 0.55 0.65 0.60
e
0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3
0.40
z
0.02 0.08 0.05
All Dimensions in mm
A1
Seating Plane
D
b
Pin #1 ID
e
E b2
z
L3
L2
L1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2-DFN1006-3
C
Y
Dimensions
C
G1
G2
X
X1
Y
Y1
Y1
G2
X
Value (in mm)
0.70
0.30
0.20
0.40
1.10
0.25
0.70
G1
X1
DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
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DMP210DUFB4
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DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
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