Advance Technical Information IXYA20N65B3 IXYP20N65B3 IXYH20N65B3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE(sat) tfi(typ) = Extreme Light Punch Through IGBT for 5-30kHz Switching 650V 20A 2.10V 87ns TO-263 (IXYA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V G IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 58 20 108 A A A TO-247 AD (IXYH) IA EAS TC = 25°C TC = 25°C 10 200 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 20 Clamped Inductive Load ICM = 40 @VCE VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 5 μs PC TC = 25°C 230 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-247 & TO-220) Weight TO-263 TO-220 TO-247 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC G V 10 150 A A 100 nA © 2015 IXYS CORPORATION, All Rights Reserved 2.10 C (Tab) C (Tab) C = Collector Tab = Collector Features Optimized for 5-30kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability International Standard Packages Advantages 6.0 1.77 2.05 E G = Gate E = Emitter = 20A, VGE = 15V, Note 1 TJ = 150C C CE High Power Density Extremely Rugged Low Gate Drive Requirement Applications V TJ = 150C IGES TO-220 (IXYP) V V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100644(02/15) IXYA20N65B3 IXYP20N65B3 IXYH20N65B3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 8.5 IC = 20A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 20A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 20A, VGE = 15V VCE = 400V, RG = 20 Note 2 td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 150°C IC = 20A, VGE = 15V VCE = 400V, RG = 20 Note 2 RthJC RthCS RthCS TO-220 TO-247 Notes: TO-220 Outline 14 S 826 66 19 pF pF pF 29 6 14 nC nC nC 12 25 0.50 103 87 0.45 ns ns mJ ns ns mJ 0.70 13 26 0.93 124 147 0.76 ns ns mJ ns ns mJ 0.50 0.21 0.65 °C/W °C/W °C/W Pins: 1 - Gate 3 - Emitter 2 - Collector TO-247 Outline 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. TO-263 Outline 1 - Gate 2,4 - Collector 3 - Emitter 1 = Gate 2 = Collector 3 = Emitter 4 = Collector ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYA20N65B3 IXYP20N65B3 IXYH20N65B3 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 40 VGE = 15V 13V 12V 11V 35 VGE = 15V 100 10V 14V 25 20 I C - Amperes I C - Amperes 30 120 9V 15 5 12V 60 11V 10V 9V 20 7V 8V 0 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 20 25 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 40 2.0 VGE = 15V 13V 12V 11V 30 VGE = 15V 1.8 10V 30 I C = 40A VCE(sat) - Normalized 35 I C - Amperes 13V 40 8V 10 80 25 9V 20 15 8V 10 7V 1.6 1.4 I C = 20A 1.2 1.0 0.8 5 I C = 10A 6V 0.6 0 0 0.5 1 1.5 2 2.5 3 3.5 -50 4 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Input Admittance 45 40 TJ = 25ºC 5 35 I C - Amperes VCE - Volts 30 4 I C = 40A 3 25 20 TJ = 150ºC 25ºC - 40ºC 15 20A 10 2 5 10A 0 1 7 8 9 10 11 12 VGE - Volts © 2015 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 VGE - Volts 8 9 10 175 IXYA20N65B3 IXYP20N65B3 IXYH20N65B3 Fig. 7. Transconductance Fig. 8. Gate Charge 24 16 TJ = - 40ºC VCE = 10V I C = 20A I G = 10mA 12 25ºC 16 VGE - Volts g f s - Siemens VCE = 325V 14 20 150ºC 12 10 8 6 8 4 4 2 0 0 0 5 10 15 20 25 30 35 40 45 50 0 55 5 10 15 20 25 I C - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 30 10,000 40 Cies 1,000 30 I C - Amperes Capacitance - PicoFarads f = 1 MHz Coes 20 100 10 TJ = 150ºC RG = 20Ω dv / dt < 10V / ns Cres 0 10 0 5 10 15 20 25 30 35 100 40 200 300 500 600 700 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1 1000 VCE(sat) Limit D = 0.5 25µs 10 100µs 1 Z (th)JC - ºC / W 100 I D - Amperes 400 VCE - Volts VCE - Volts D = 0.2 0.1 D = 0.1 tp D = 0.02 D = 0.01 TJ = 175ºC 1ms TC = 25ºC Single Pulse DC 0.1 1 D = tp / T D = 0.05 10 100 T Single Pulse 10ms 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 Pulse Width - Second 1.E-01 1.E+00 IXYA20N65B3 IXYP20N65B3 IXYH20N65B3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 2.0 Eoff --- 1.6 4.5 1.4 4.0 VCE = 400V 1.4 3.0 I C = 40A 1.2 2.5 1.0 2.0 0.8 1.5 0.4 40 50 60 70 80 90 2.0 0.8 1.6 0.6 1.2 0.4 0.2 0.5 100 0.0 Eoff Eon 0.4 0.0 10 ---- 3.2 200 2.8 180 RG = 20Ω , VGE = 15V VCE = 400V 2.4 15 20 25 0.6 1.2 I C = 20A t f i - Nanoseconds 1.6 0.8 0.2 0.4 0.0 25 50 75 100 125 tfi td(off) - - - - VCE = 400V 300 140 240 I C = 20A 120 180 I C = 40A 100 120 80 60 20 30 40 50 tfi 210 180 180 160 0 100 80 90 TJ = 25ºC 40 0 I C - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 35 40 t f i - Nanoseconds 120 30 140 td(off) - - - 130 140 I C = 20A 120 120 110 100 100 I C = 40A 60 80 30 60 90 25 50 75 100 TJ - Degrees Centigrade 125 80 150 t d(off) - Nanoseconds TJ = 150ºC 120 t d(off) - Nanoseconds t f i - Nanoseconds 90 VCE = 400V 150 25 80 RG = 20Ω , VGE = 15V VCE = 400V 20 70 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature tfi td(off) - - - - 160 15 60 RG - Ohms RG = 20Ω , VGE = 15V 10 420 360 60 0.0 150 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 200 40 TJ = 150ºC, VGE = 15V TJ - Degrees Centigrade 240 35 t d(off) - Nanoseconds 0.8 - MilliJoules 2.0 on 1.0 0.4 30 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 160 I C = 40A E Eoff - MilliJoules 1.2 0.8 TJ = 25ºC I C - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 1.4 2.4 TJ = 150ºC RG - Ohms 1.6 2.8 1.0 1.0 I C = 20A 30 ---- Eon - MilliJoules 3.5 20 Eon VCE = 400V 1.2 E on - MilliJoules 1.6 0.6 Eoff 3.2 RG = 20Ω , VGE = 15V TJ = 150ºC , VGE = 15V 1.8 Eoff - MilliJoules Eon - 5.0 Eoff - MilliJoules 2.2 Fig. 14. Inductive Switching Energy Loss vs. Collector Current IXYA20N65B3 IXYP20N65B3 IXYH20N65B3 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 160 tri I C = 40A t r i - Nanoseconds 100 50 I C = 20A 40 60 30 40 20 20 10 0 30 40 50 60 70 80 90 0 100 tri 15 40 14 TJ = 150ºC 30 13 TJ = 25ºC 20 12 10 11 0 10 10 15 20 25 30 35 40 I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 80 16 VCE = 400V 50 RG - Ohms 90 td(on) - - - - t d(on) - Nanoseconds 60 17 RG = 20Ω , VGE = 15V t d(on) - Nanoseconds VCE = 400V 80 tri 60 70 120 20 70 80 td(on) - - - - TJ = 150ºC, VGE = 15V 140 90 t r i - Nanoseconds 180 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current td(on) - - - - 18 17 RG = 20Ω , VGE = 15V 16 VCE = 400V 60 15 I C = 40A 50 14 40 13 30 12 I C = 20A 20 11 10 25 50 75 100 t d(on) - Nanoseconds t r i - Nanoseconds 70 125 10 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_20N65B3D1(3D-Y42) 02-15-2015