HABTA28(NPN) GENERAL PURPOSE TRANSISTOR REPLACEMENT TYPE : MMBTA28 FEATURES Darlington Amplifier MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Collector-Base Voltage SOT-23 Value Unit VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 12 V Collector Current-Continuous IC 500 mA Collector Power Dissipation PC 200 mW Thermal Resistance Junction to Ambient RθJA 625 °C/W Junction Temperature TJ 150 °C Storage Temperature Tstg -55to +150 °C ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted) Parameter Symbol Test conditions 1:BASE Min MARKING:3SS 2:EMITTER Typ 3:COLLECTOR Max Unit Collector-Base Breakdown Voltage VCBO IC=100μA,IE=0 80 V Collector-Emitter Breakdown Oltage VCEO IC=100μA,IB=0 80 V Emitter-Base Breakdown Voltage VEBO IE=10uA,IC=0 12 V Collector Cut-off Current ICBO VCB=60V,IE=0 0.1 μA Collector Cut-off current ICES VCE=60V, VBE=0 0.5 μA Emitter Cut-off Current IEBO VEB=10V,IC=0 0.1 μA hFE(1) VCE=5V,IC=10mA 10000 K hFE(2) VCE=5V,IC=100mA 10000 K VCE(sat)1 IC=10mA,IB=0.01mA 1.2 V VCE(sat)2 IC=100mA,IB=0.1mA 1.5 V Base-Emitter Voltage VBE VCE=5V, IC=100mA 2 V Transition Frequency fT VCE=5V,IC=10mA,f=100MHz 8 MHz Collector Output Capacitance COB VCB=1V, IE=0,f=1MHz DC Current Gain Collector-Emitter Saturation Voltage ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:[email protected] 125 pF 1/4 HABTA28(NPN) GENERAL PURPOSE TRANSISTOR VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) Typical Characteristics PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 75 100 150 125 175 IC IB = 1000 TA = -50°C 0.9 0.8 TA = 25°C 0.7 0.6 TA = 150°C 0.5 0.4 0.3 0.2 0.1 0 1 200 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 100000 1.5 hFE, DC CURRENT GAIN (NORMALIZED) 1.6 VBE(ON), BASE-EMITTER VOLTAGE (V) 1.1 1.0 VCE = 5V 1.4 TA = -50°C 1.3 1.2 1.1 TA = 25°C 1.0 0.9 0.8 0.7 TA = 150°C 0.6 0.5 0.4 VCE = 5V 10000 TA = 150°C TA = 25°C 10000 TA = -50°C 1000 100 0.3 0.1 10 1 100 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical DC Current Gain vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Base-Emitter Voltage vs. Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V 100 10 1 1 10 100 COLLECTOR CURRENT IC (mA) Fig. 5 Typical Gain Bandwidth Product vs. Collector Current ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:[email protected] 2/4 HABTA28(NPN) GENERAL PURPOSE TRANSISTOR SOT-23 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP 1.800 L 0.037 TYP 2.000 0.071 0.550 RE F 0.079 0.022 RE F L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:[email protected] 3/4 HABTA28(NPN) GENERAL PURPOSE TRANSISTOR SOT-23 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-23 3.15 2.77 1.22 φ1.50 1.75 3.50 4.00 4.00 2.00 8.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-23 Tape Leader and Traller SOT-23 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 φ178 54.40 13.00 R78 R25.60 R6.50 9.50 12.30 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:[email protected] 4/4