ON NTMFS4C029NT1G Power mosfet Datasheet

NTMFS4C029N
Power MOSFET
30 V, 46 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
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V(BR)DSS
30 V
46 A
9.0 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Parameter
D (5−8)
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
15.0
A
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.49
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
22.5
A
Continuous Drain
Current RqJA
(Note 2)
TA = 80°C
G (4)
11.2
S (1,2,3)
N−CHANNEL MOSFET
TA = 80°C
TA = 25°C
Steady
State
TA = 25°C
MARKING
DIAGRAMS
16.8
PD
5.6
ID
8.2
TA = 80°C
6.2
PD
0.75
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
46
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
23.6
W
TA = 25°C, tp = 10 ms
IDM
132
A
TC =80°C
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
34
IDmax
80
A
TJ,
TSTG
−55 to
+150
°C
IS
21
A
dV/dt
7.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 25 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
EAS
31
mJ
TL
1
D
4C029
AYWZZ
D
D
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
ORDERING INFORMATION
Drain to Source dV/dt
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
S
SO−8 FLAT LEAD
S
CASE 488AA
S
STYLE 1
G
A
TA = 25°C
Current Limited by Package
D
W
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
ID MAX
5.88 mW @ 10 V
• CPU Power Delivery
• DC−DC Converters
Power Dissipation
RqJA ≤ 10 s (Note 1)
RDS(ON) MAX
°C
260
Package
Shipping†
NTMFS4C029NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4C029NT3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 17 Apk, EAS = 14 mJ.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 1
1
Publication Order Number:
NTMFS4C029N/D
NTMFS4C029N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
5.3
Junction−to−Ambient – Steady State (Note 4)
RqJA
50.3
Junction−to−Ambient – Steady State (Note 5)
RqJA
165.9
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
RqJA
22.2
Unit
°C/W
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = 7.1 A,
Tcase = 25°C, ttransient = 100 ns
34
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
V
14.5
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
1.3
VGS(TH)/TJ
RDS(on)
4.7
mV/°C
VGS = 10 V
ID = 30 A
4.9
5.88
VGS = 4.5 V
ID = 15 A
7.41
9.0
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
Gate Resistance
RG
TA = 25°C
43
0.3
1.0
mW
S
2.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
987
VGS = 0 V, f = 1 MHz, VDS = 15 V
574
pF
162
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
9.7
Threshold Gate Charge
QG(TH)
1.5
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
4.8
Gate Plateau Voltage
VGP
3.2
V
18.6
nC
Total Gate Charge
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
0.165
2.8
nC
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
9.0
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
34
14
7.0
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2
ns
NTMFS4C029N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
7.0
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
26
ns
18
4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.80
TJ = 125°C
0.67
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
1.1
V
26.7
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
14.1
ns
12.6
13.7
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4C029N
TYPICAL CHARACTERISTICS
4.0 V
4.2 V to 10 V
VDS = 5 V
70
ID, DRAIN CURRENT (A)
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
60
50
40
30
TJ = 125°C
20
TJ = 25°C
10
2.6 V
TJ = −55°C
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
80
3.8 V
TJ = 25°C
1
2
4
3
2.0
2.5
3.0
3.5
4.0
Figure 2. Transfer Characteristics
ID = 30 A
0.014
0.012
0.010
0.008
0.006
0.004
0.002
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
4.5 5.0
0.020
0.018
TJ = 25°C
0.016
0.014
0.012
VGS = 4.5 V
0.010
0.008
VGS = 10 V
0.006
0.004
0.002
10
20
30
40
50
60
70
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
10000
VGS = 0 V
ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.5
Figure 1. On−Region Characteristics
0.016
1.5
1.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.018
1.6
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.020
3.0
0
5
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
65
60
55
50
45
40
35
30
25
20
15
10
5
0
1.4
1.3
1.2
1.1
1.0
1000
TJ = 150°C
TJ = 125°C
100
TJ = 85°C
0.9
0.8
0.7
−50
10
−25
0
25
50
75
100
125
150
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTMFS4C029N
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25°C
Ciss
1000
VGS, GATE−TO−SOURCE VOLTAGE (V)
1200
800
Coss
600
400
Crss
200
0
0
5
10
15
20
25
QT
9
8
7
6
5
Qgs
4
Qgd
3
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
2
1
0
0
30
2
4
6
8
10
18
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
20
IS, SOURCE CURRENT (A)
18
td(on)
tr
td(off)
tf
10
VGS = 0 V
16
14
12
10
8
6
4
TJ = 125°C
2
1
1
10
0
0.4
100
TJ = 25°C
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10 ms
100 ms
10
1 ms
10 ms
1
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
RG, GATE RESISTANCE (W)
100
ID, DRAIN CURRENT (A)
16
Figure 7. Capacitance Variation
100
0.01
14
Qg, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 15 A
VGS = 10 V
0.1
12
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
t, TIME (ns)
10
100
14
ID = 17 A
12
10
8
6
4
2
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTMFS4C029N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
60
100
ID, DRAIN CURRENT (A)
50
GFS (S)
40
30
20
10
10
20
30
40
50
60
70
80
TA = 85°C
10
1
1.E−08
0
0
TA = 25°C
1.E−07
1.E−06
1.E−05
1.E−04 1.E−03
ID (A)
PULSE WIDTH (SECONDS)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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6
NTMFS4C029N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
C
DETAIL A
0.10 C
A
0.10 C
SIDE VIEW
0.10
b
C A B
0.05
c
SEATING
PLANE
DETAIL A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.495
4.560
2X
8X
1.530
e/2
e
L
1
4
3.200
4.530
K
E2
PIN 5
(EXPOSED PAD)
L1
1.330
2X
M
0.905
1
0.965
G
D2
4X
BOTTOM VIEW
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS4C029N/D