DMNH10H028SPSQ Green 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI Product Summary Features V(BR)DSS RDS(ON) 100V 28mΩ @ VGS = 10V ID TC = +25°C 40A Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed <1.1mm Package Profile – Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Engine Management Systems Body Control Electronics DC-DC Converters Case: POWERDI®5060-8 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish – Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) ® POWERDI 5060-8 D Pin1 S D S D S D G D G S Top View Internal Schematic Bottom View Top View Pin Configuration Ordering Information (Note 5) Part Number DMNH10H028SPSQ-13 Notes: Case POWERDI®5060-8 Packaging 2500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D D D D =Manufacturer’s Marking H1H28SS = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 15 = 2015) WW = Week Code (01 to 53) H1H28SS YYWW S S S POWERDI is a registered trademark of Diodes Incorporated. DMNH10H028SPSQ Document number: DS38226 Rev. 1 - 2 G 1 of 7 www.diodes.com November 2015 © Diodes Incorporated DMNH10H028SPSQ Maximum Ratings (@TC = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) (Note 6) Maximum Continuous Body Diode Forward Current (Note 7) Avalanche Current (Note 9) L=0.1mH Avalanche Energy (Note 9) L=0.1mH Continuous Drain Current, VGS = 10V TC = +25°C TC = +100°C ID IDM IS IAS EAS Value 100 ±20 40 25 54 3.9 26 35 Unit V V Value 1.6 97 2.9 52 1.8 -55 to +175 Unit W °C/W W A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Electrical Characteristics Steady state Steady state °C/W °C (@TC = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 6.0V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: Symbol PD RJA PD RJA RJC TJ, TSTG Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 100 — — — — — — 1.0 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) VSD 2.0 — — 2.5 19 0.7 4.0 28 1.2 V m V VDS = VGS, ID = 250µA VGS = 10V, ID = 20A VGS = 0V, IS = 1.0A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 2245 173 68 1.9 36 22 7.3 9.2 6.4 5.8 17.8 4.8 35 47 — — — — — — — — — — — — — — pF VDS = 50V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VDD = 50V, ID = 20A ns VGS = 10V, VDS= 50V, RG = 3.0, ID = 20A ns nC IF = 20A, di/dt = 100A/µs IF = 20A, di/dt = 100A/µs 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. DMNH10H028SPSQ Document number: DS38226 Rev. 1 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMNH10H028SPSQ 30 30.0 VGS=4.5V 25.0 25 VGS=6.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS=5V VGS=5.0V VGS=8.0V 20.0 VGS=4.0V VGS=10.0V 15.0 10.0 15 85℃ 150℃ 10 25℃ 175℃ VGS=3.5V -55℃ 0 0.0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.024 0.022 0.02 2 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 VGS=10.0V 0.018 0.016 0.014 0.06 0.05 0.04 0.05 175℃ 150℃ 0.04 125℃ 85℃ 0.03 25℃ 0.02 -55℃ 0.01 ID=20A 0.03 0.02 0.01 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS=10V 5 0.07 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-resistance vs. Drain Current and Gate Voltage 0.06 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.08 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 125℃ 5 5.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 20 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2.6 2.4 VGS=10V, ID=20A 2.2 2 1.8 1.6 1.4 VGS=10V, ID=10A 1.2 1 0.8 0.6 0.4 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMNH10H028SPSQ Document number: DS38226 Rev. 1 - 2 3 of 7 www.diodes.com November 2015 © Diodes Incorporated 0.05 3.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMNH10H028SPSQ 0.045 0.04 VGS=10V, ID=20A 0.035 0.03 0.025 VGS=10V, ID=10A 0.02 0.015 3 2.8 2.6 2.4 ID=1mA 2.2 2 ID=250µA 1.8 1.6 1.4 1.2 1 0.01 -50 -50 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature -25 10000 30 CT, JUNCTION CAPACITANCE (pF) f=1MHz IS, SOURCE CURRENT (A) 25 VGS=0V, TA=85℃ 20 VGS=0V, TA=125℃ 15 VGS=0V, TA=150℃ 10 VGS=0V, TA=25℃ VGS=0V, TA=175℃ 5 VGS=0V, TA=-55℃ Ciss 1000 Coss Crss 100 10 0 0 0.3 0.6 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.2 10 20 30 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 50 100 10 RDS(ON) Limited ID, DRAIN CURRENT (A) VGS (V) 8 6 VDS=50V, ID=20A 4 PW =1ms 10 PW =10ms 1 0.1 2 TJ(Max)=175℃ Tj,(Max)=175℃ Tc=25℃ T C=25℃ Single Pulse DUT on 1*MRP board VGS=10V PW =100ms PW =1s PW =10s DC 0.01 0 0 5 10 15 20 25 30 Qg (nC) Figure 11. Gate Charge 35 40 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 1000 POWERDI is a registered trademark of Diodes Incorporated. DMNH10H028SPSQ Document number: DS38226 Rev. 1 - 2 4 of 7 www.diodes.com November 2015 © Diodes Incorporated DMNH10H028SPSQ r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t)=r(t) * RθJA RθJA=97°C/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 100 1000 POWERDI is a registered trademark of Diodes Incorporated. DMNH10H028SPSQ Document number: DS38226 Rev. 1 - 2 5 of 7 www.diodes.com November 2015 © Diodes Incorporated DMNH10H028SPSQ Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. POWERDI®5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G POWERDI®5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10º 12º 11º Θ1 6º 8º 7º All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. POWERDI®5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X G Y(4x) Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 POWERDI is a registered trademark of Diodes Incorporated. DMNH10H028SPSQ Document number: DS38226 Rev. 1 - 2 6 of 7 www.diodes.com November 2015 © Diodes Incorporated DMNH10H028SPSQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMNH10H028SPSQ Document number: DS38226 Rev. 1 - 2 7 of 7 www.diodes.com November 2015 © Diodes Incorporated