LED DOT MATRIX BL-M12X881XX Features: 39.10mm (1.2”) Φ3.0 dot matrix LED display. BI-COLOR Low current operation. Excellent character appearance. Easy mounting on P.C. Boards or sockets. I.C. Compatible. ROHS Compliance. Electrical-optical characteristics: (Ta=25 ) (Test Condition: IF=20mA) Part No Row Cathode Column Anode Row Anode Column Cathode BL-M12E881SG-XX BL-M12F881SG-XX BL-M12E881EG-XX Emitted Color Super Red BL-M12F881EG-XX BL-M12F881DUG-XX . w w BL-M12E881UEUG-X X BL-M12F881UEUG-X X -XX: Surface / Lens color 0 Number Ref Surface Color White Epoxy Color Water clear w Iv λP (nm) Material AlGaInP 660 Green GaP/GaP 570 Orange GaAsP/Ga P 635 Typ Max TYP.(mcd) m o c . x u l t e b Green BL-M12E881DUG-XX VF Unit:V Chip 2.10 2.50 200 2.20 2.50 195 2.10 2.50 190 2.20 2.50 195 GaP/GaP 570 Ultra Red AlGaInP 660 2.10 2.50 320 Ultra Green AlGaInP 574 2.20 2.50 250 Ultra Orange AlGaInP 630 2.10 2.50 235 Ultra Green AlGaInP 574 2.20 2.50 250 1 2 3 4 5 Black White diffused Gray Red Diffused Red Green Diffused Green Yellow Diffused Absolute maximum ratings (Ta=25°C) S G E Forward Current IF Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature TOPR Storage Temperature TSTG 30 75 5 30 80 5 30 80 5 30 75 5 30 75 5 30 65 5 mW 150 150 150 150 150 150 mA Lead Soldering Temperature TSOL D UG UE U nit Parameter -40 to +80 -40 to +85 Max.260±5 for 3 sec Max. (1.6mm from the base of the epoxy bulb) APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 1 of 3 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] mA V LED DOT MATRIX BL-M12X881XX Package configuration & Internal circuit diagram m o c . x . w w u l t e b w Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is ±0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice. APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 2 of 3 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] LED DOT MATRIX BL-M12X881XX Typical electrical-optical characteristics curves: (A) 1.0 (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10) 0.5 0 350 400 500 450 550 600 650 700 750 800 850 900 950 1000 Wavelength(nm) RELATIVE INTENSITY Vs WAVELENGTH( p ) (1) - GaAsP/GaAs 655nm/Red (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (6) - GaAlAs/GaAs 660nm/Super Red (8) - GaAsP/GaP 610nm/Super Red 8 64 5 2 3 40 e b . w w 30 20 10 0 1.2 1.6 2.0 2.4 1 3.0 2.6 2.0 1.0 20 FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE 1 5 4 2 3 60 80 0.2 -10 0 10 20 30 40 AMBIENT TEMPERATURE Ta( ) 50 60 30 20 1 6 2,4,8,A 3 5 10 0 100 20 40 60 80 100 AMBIENT TEMPERATURE Ta( ) FORWARD CURRENT VS. AMBIENT TEMPERATURE 300KHz 3KHz 10KHz 1KHz 100KHz F-REFRESH RATE 4 3 2 -20 40 3KHz 300Hz 30KHz 100KHz 10KHz 1KHz 100Hz 10 9 8 7 6 5 Ipeak MAX. IDC MAX. 0.5 0.1 -30 40 10 9 8 7 6 5 Ipeak MAX. IDC MAX. RELATIVE LUMINOUS INTENSITY 1 B FORWARD CURRENT (mA) RELATIVE LUMINOUS INTENSITY VS. FORWARD CURRENT w 3 2 5 50 0 3.0 m o c . x lt u 4.0 FORWARD CURRENT(mA) FORWARD CURRENT(mA) RELATIVE LUMINOUS INTENSITY 1 50 (9) - GaAlAs 880nm (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (D) - InGaAl/SiC 525nm/Ultra Green 4 3 2 70 1 1 10 100 1000 tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K) NOTE:25 10,000 1 1 10 100 1000 tp-PULSE DURATION uS (5) free air temperature unless otherwise specified APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 3 of 3 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] 10,000