4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Features • High isolation 5000 VRMS • CTR flexibility available see order information • DC input with transistor output • Temperature range - 55 °C to 100 °C • Regulatory Approvals UL - UL1577 (E364000) VDE - EN60747-5-5(VDE0884-5) CQC – GB4943.1, GB8898 IEC60065, IEC60950 Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Applications • Switch mode power supplies • Computer peripheral interface • Microprocessor system interface Package Outline Schematic Note: Different bending options available. See package dimension. CT Microelectronics Proprietary & Confidential Page 1 Rev 1 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Absolute Maximum Rating at 25oC Symbol Parameters Ratings Units 5000 VRMS VISO Isolation voltage TOPR Operating temperature -55 ~ +100 0C TSTG Storage temperature -55 ~ +150 0C TSOL Soldering temperature 260 0C Forward current 60 mA 1 A 6 V Notes Emitter IF IF(TRANS) Peak transient current (≤1µs P.W,300pps) VR Reverse voltage PD Power dissipation 120 mW Power dissipation 150 mW BVCEO Collector-Emitter Breakdown Voltage 55 V BVCBO Collector-Base Breakdown Voltage 55 V BVECO Emitter-Collector Breakdown Voltage 7 V BVEBO Emitter-Base Breakdown Voltage 7 V Detector PD CT Microelectronics Proprietary & Confidential Page 2 Rev 1 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Electrical Characteristics T A = 25°C (unless otherwise specified) Emitter Characteristics Symbol Parameters Test Conditions Min Typ Max Units IF=10mA 1.24 1.4 V IF=50mA 1.45 1.5 V VF Forward voltage VF Forward voltage IR Reverse Current VR = 6V - - 5 µA Input Capacitance f= 1MHz - 45 - pF Min Typ Max Units CIN H11B3 Notes Detector Characteristics Symbol Parameters Test Conditions BVCEO Collector-Emitter Breakdown IC= 100µA 55 - - V BVECO Emitter-Collector Breakdown IE= 100µA 7 - - V BVCBO Collector-Base Breakdown IC= 100µA 55 - - V Collector-Emitter Dark Current VCE= 10V, IF=0mA - - 100 nA Min Typ Max Units 100 - - 50 - - 4N32, 4N33 500 - - H11B1 500 - - 200 - - 100 - - ICEO Notes Transfer Characteristics Symbol Parameters Test Conditions 4N29, 4N30 4N31 IF= 10mA, VCE= 10V Notes Current CTR Transfer % H11B2 IF= 1mA, VCE= 10V Ratio H11B3 VCE(SAT) H11B255 IF= 10mA, VCE= 5V 100 - - TIL113 IF= 10mA, VCE= 1V 300 - - IF= 8mA, IC= 2mA - - 1.0 IF= 8mA, IC= 2mA - - 1.2 Collector- 4N29, 4N30, 4N32, Emitter 4N33 Saturation 4N31, TIL113 Voltage H11B1, H11B2, V IF= 1mA, IC= 1mA - - 1.0 IF=50mA, IC= 50mA - - 1.0 H11B3 H11B255 RIO Isolation Resistance VIO= 500VDC CIO Isolation Capacitance f= 1Mhz CT Microelectronics Proprietary & Confidential 1x1011 Ω 0.25 Page 3 pF Rev 1 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Switching Characteristics Symbol Parameters Test Conditions Min Typ Max - - 4.7 Units Notes 4N29, 4N30, IF= 200mA, Ic= 50mA, RL= 4N31, 4N32, 100Ω TON Turn On Time 4N33, TIL113 µs H11B1, H11B2, IF= 10mA, VCE= 10V, RL= H11B3, H11B255 100Ω - 24 - - - 30 - - 90 - 17 - 4N29, 4N30, TOFF 4N31 IF= 200mA, Ic= 50mA, RL= 4N32, 4N33, 100Ω Turn Off Time CT Microelectronics Proprietary & Confidential µs TIL113 H11B1, H11B2, IF= 10mA, VCE= 10V, RL= H11B3, H11B255 100Ω Page 4 Rev 1 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Typical Characteristic Curves CT Microelectronics Proprietary & Confidential Page 5 Rev 1 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler CT Microelectronics Proprietary & Confidential Page 6 Rev 1 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Package Dimension Dimensions in mm unless otherwise stated Standard DIP – Through Hole Wide Lead Forming – Through Hole (M Type) CT Microelectronics Proprietary & Confidential Page 7 Rev 1 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Surface Mount Forming (S Type) Surface Mount Forming (Low Profile) (SL Type) CT Microelectronics Proprietary & Confidential Page 8 Rev 1 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Recommended Solder Mask Dimensions in mm unless otherwise stated Marking Information CT 4N29 YWWK Note: CT 4N29 : Denotes “CT Micro” : Part Number Y WW K : Fiscal Year : Work Week : Manufacturing Code CT Microelectronics Proprietary & Confidential Page 9 Rev 1 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Ordering Information 4N2X(Y)(Z)-G, 4N3X(Y)(Z)-G, H11BX(Y)(Z)-G, TIL113(Y)(Z)-G X = (9 for 4N2X), (0,1,2,3 for 4N3X series), (1,2,3,255 for H11BX series) Y = Lead form option (S, SL, M or none) Z = Tape and reel option (T1, T2 or none) G= Material option (G: Green, None: Non-green) Option Description Quantity None Standard 6 Pin Dip 65Units/Tube M Wide Lead Forming 65Units/Tube S(T1) Surface Mount Lead Forming – With Option 1 Taping 1000 Units/Reel S(T2) Surface Mount Lead Forming – With Option 2 Taping 1000 Units/Reel SL(T1) Surface Mount Lead Forming(Low Profile) – With Option 1 Taping 1000 Units/Reel SL(T2) Surface Mount Lead Forming(Low Profile) – With Option 2 Taping 1000 Units/Reel CT Microelectronics Proprietary & Confidential Page 10 Rev 1 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Carrier Tape Specifications Dimensions in mm unless otherwise stated Option S(T1) & SL(T1) Option S(T2) & SL(T2) CT Microelectronics Proprietary & Confidential Page 11 Rev 1 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Reflow Profile Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (ts) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60 – 150 seconds Peak Body Package Temperature 260°C +0°C / -5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max Time 25°C to Peak Temperature 8 minutes max. CT Microelectronics Proprietary & Confidential Page 12 Rev 1 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler DISCLAIMER CT MICROELECTRONICS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILIBILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. ______________________________________________________________________________________ CT MICROELECTRONICS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTTEN APPROVAL OF CT MICROELECTRONICS LTD. 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical support device or system whose failure to perform implant into the body, or (b) support or sustain life, can be reasonably expected to cause the failure of or (c) whose failure to perform when properly used the life support device or system, or to affect its in accordance with instruction for use provided in safety or effectiveness. the labeling, can be reasonably expected to result in significant injury to the user. CT Microelectronics Proprietary & Confidential Page 13 Rev 1 Apr, 2014