NPTB00050 Not recommended for new designs Contact [email protected] for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power • 25W P3dB CW broadband power from 500-1000MHz • Characterized for operation up to 32V • 100% RF tested • Thermally enhanced industry standard package • High reliability gold metallization process • Lead-free and RoHS compliant • Subject to ECCN 3A982.a.1 export control Broadband 50 Watt, 28 Volt GaN HEMT RF Specifications (CW): VDS = 28V, IDQ = 450mA, Frequency = 3000MHz, TC = 25°C, Measured in Nitronex Test Fixture Symbol Parameter Min Typ Max Units P3dB Average Output Power at 3dB Gain Compression 45 50 - W P1dB Average Output Power at 1dB Gain Compression 33 38 - W 10.5 11.5 - dB 55 60 - % GSS Small Signal Gain h Peak Drain Efficiency at POUT = P3dB y Output mismatch stress, VSWR = 7:1, all phase angles, POUT = P1dB No Performance Degradation After Test Typical OFDM Performance: VDS = 28V, IDQ = 300mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame data, 10MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF. Frequency = 2400 to 2600MHz. POUT,AVG = 6W, TC=25°C. Symbol GP h EVM NPTB00050 Parameter Typ Units 12.0 dB Drain Efficiency 23 % Error Vector Magnitude 2.0 % Power Gain Page 1 NDS-007 Rev 6, April 2013 Not Recommended for New Designs Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology NPTB00050 Not recommended for new designs Contact [email protected] for questions or support Symbol Parameter Min Typ Max Units 100 - - V - 0.1 16 mA Off Characteristics VBDS Drain-Source Breakdown Voltage (VGS = -8V, ID = 16mA) IDLK Drain-Source Leakage Current (VGS = -8V, VDS = 60V) On Characteristics VT Gate Threshold Voltage (VDS = 28V, ID = 16mA) -2.3 -1.8 -1.3 V VGSQ Gate Quiescent Voltage (VDS = 28V, ID = 450mA) -2.0 -1.5 -1.0 V RON On Resistance (VGS = 2V, ID = 120mA) - 0.25 0.40 W 9.2 9.8 - A ID Drain Current (VDS = 7V pulsed, 300ms pulse width, 0.2% duty cycle, VGS = 2V) Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted Symbol Parameter Max Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage -10 to 3 V IG Gate Current 80 mA PT Total Device Power Dissipation (Derated above 25°C) 55 W qJC Thermal Resistance (Junction-to-Case) 3.2 °C/W TSTG TJ Storage Temperature Range Operating Junction Temperature -65 to 150 °C 200 °C HBM Human Body Model ESD Rating (per JESD22-A114) 1B (>500V) MM Machine Model ESD Rating (per JESD22-A115) M2 (>100V) NPTB00050 Page 2 NDS-007 Rev 6, April 2013 Not Recommended for New Designs Not Recommended for New Designs DC Specifications: TC = 25°C NPTB00050 Not recommended for new designs Contact [email protected] for questions or support Load-Pull Data, Reference Plane at Device Leads Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance Frequency (MHz) ZS (W) ZL (W) PSAT (W) Gain (dB) Drain Efficiency @ PSAT (%) 2000 3.2 - j3.5 4.8 - j2.5 50 15.0 65 2400 3.1 - j7.5 5.0 - j3.5 50 13.8 62 2500 3.1 - j8.4 5.2 - j3.6 50 13.8 62 2600 3.2 - j9.4 5.3 - j3.7 50 13.5 61 2700 3.7 - j11.0 5.2 - j4.9 50 13.1 60 3000 4.4 - j13.0 5.2 - j5.3 50 13.0 60 ZS is the source impedance presented to the device. ZL is the load impedance presented to the device. Figure 1 - Optimal Impedances for CW Performance, VDS = 28V, IDQ = 450mA NPTB00050 Page 3 NDS-007 Rev 6, April 2013 Not Recommended for New Designs Not Recommended for New Designs VDS=28V, IDQ =450mA, TA=25°C unless otherwise noted NPTB00050 Not recommended for new designs Contact [email protected] for questions or support Load-Pull Data, Reference Plane at Device Leads Figure 2 - Typical CW Performance vs. IDQ VDS = 28V, 3000MHz NPTB00050 Figure 3 - Typical CW Performance VDS = 28V, IDQ = 450mA Page 4 NDS-007 Rev 6, April 2013 Not Recommended for New Designs Not Recommended for New Designs VDS=28V, IDQ =450mA, TA=25°C unless otherwise noted. NPTB00050 Not recommended for new designs Contact [email protected] for questions or support Typical Device Characteristics Figure 5 - MTTF of NRF1 Devices as a Function of Junction Temperature Figure 4 - Power Derating Curve Figure 6 - Typical CW Performance vs. Temperature in Nitronex Test Fixture, VDS = 28V, IDQ = 450 mA, 3000MHz NPTB00050 Page 5 NDS-007 Rev 6, April 2013 Not Recommended for New Designs Not Recommended for New Designs VDS=28V, IDQ =450mA, TA=25°C unless otherwise noted. NPTB00050 Not recommended for new designs Contact [email protected] for questions or support NPTB00050, 3000MHz CW Production Test Fixture VGS + C1 C2 V DRAIN V VDS V GATE GS VDS C4 C3 C6 R3 + C10 NPT B0 0 0 4 0 A 035274R G0 4 1 2 0 0 0 0 0 R2 RFIN RF IN Nitronex C7 C5 OUT RFRFOUT TL5 65mils 600mils C9 TL5 65mils 600mils RFOUT NPTB00050 C12 RFIN C8 NPTB00050 8/01/2006 C13 TL1 60mils 250mils TL2 349mils 240mils TL3 368mils 297mils C11 TL4 65mils 1040mils Figure 7 - NPTB00050 3000MHz Test Fixture Table 2: NPTB00050 3000MHz Test Fixture Bill of Materials Name Value Vendor Vendor Number C1 150uF Nichicon UPW1C151MED C10 270uF United Chmi-Con ELXY630ELL271MK25S C3, C7 0.01uF AVX 12061C103KAT2A C2, C8 0.1uF Kemet C1206C104K1RACTU C4, C9 1.0 uF Panasonic ECJ-5YB2A105M C5, C6, C12 5.6pF ATC ATC600F5R6CT C11 1.8pF ATC ATC600F1R8AT C13 0.7pF ATC ATC600F0R7AT R2 33 ohm Panasonic ERJ-6ENF33R0V R3 0.33 ohm Panasonic ERJ-6RQFR33V Substrate - Taconic RF35, t=30mil, er =3.5 NPTB00050 Page 6 NDS-007 Rev 6, April 2013 Not Recommended for New Designs Not Recommended for New Designs VDS=28V, IDQ =450mA, TA=25°C unless otherwise noted. Additional design information and data available at www.nitronex.com. NPTB00050 Not recommended for new designs Contact [email protected] for questions or support Ordering Information1 NPTB00050B Description NPTB00050 in AC360B-2 Metal-Ceramic Bolt-Down Package 1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com Figure 8 - AC360B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm]) NPTB00050 Page 7 NDS-007 Rev 6, April 2013 Not Recommended for New Designs Not Recommended for New Designs Part Number NPTB00050 Not recommended for new designs Nitronex, LLC 2305 Presidential Drive Durham, NC 27703 USA +1.919.807.9100 (telephone) +1.919.807.9200 (fax) [email protected] www.nitronex.com Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). Important Notice Nitronex, LLC reserves the right to make corrections, modifications, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to Nitronex terms and conditions of sale supplied at the time of order acknowledgment. The latest information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at www.nitronex.com. Nitronex warrants performance of its packaged semiconductor or die to the specifications applicable at the time of sale in accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex deems necessary to support the warranty. 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Any alteration of the contained information invalidates all warranties and Nitronex is not responsible or liable for any such statements. Nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical implants into the body or any other application intended to support or sustain life. Should Buyer purchase or use Nitronex, LLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold Nitronex, LLC, its officers, employees, subsidiaries, affiliates, distributors, and its successors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, notwithstanding if such claim alleges that Nitronex was negligent regarding the design or manufacture of said products. Nitronex and the Nitronex logo are registered trademarks of Nitronex, LLC. All other product or service names are the property of their respective owners. © Nitronex, LLC 2012. All rights reserved. NPTB00050 Page 8 NDS-007 Rev 6, April 2013 Not Recommended for New Designs Not Recommended for New Designs Contact [email protected] for questions or support